Porous lo thin films As the feature size in Si-based integrated circuits has been reduced below the sub-micron level,the inherent interconnect RC (wire resistance R and capacitance C)time delay has become the major factor limiting the improvement in device speed. Copper has replaced aluminum in interconnect conducting lines. Low dielectric constant (k)materials are being intensively investigated as a replacement for silicon dioxide (k~4.0). PDF文件使用"pdfFactory”试用版本创建l.fineprint.cnPorous low-k thin films l As the feature size in Si-based integrated circuits has been reduced below the sub-micron level, the inherent interconnect RC (wire resistance R and capacitance C) time delay has become the major factor limiting the improvement in device speed. l Copper has replaced aluminum in interconnect conducting lines. l Low dielectric constant (k) materials are being intensively investigated as a replacement for silicon dioxide (k ~ 4.0). PDF 文件使用 "pdfFactory" 试用版本创建 Ìwww.fineprint.cn ÿÌ