Cleaning station for removing organic contaminants and native oxide(by HF-dip) from si wafers Oxidation furnaces for controlled growth oxide layer on Si 1050 C and steam for field oxide Sept.19,2003 3.155J/6.152JCleaning station for removing organic contaminants and native oxide (by HF-dip) from Si wafers. Oxidation furnaces for controlled growth of oxide layer on Si: 1050 C and steam for field oxide. Sept. 19, 2003 3.155J/6.152J 4