Y Liu et al. Materials Science and Engineering A 466(2007)172-177 (b)享 CVD B Crystalline boron CVD Sic CⅤDsiC C/SiC 100um Fig 1. Surface and cross-section morphology of CVD B on CVD SiC coating(deposited at 1000 C for 10h):(a)surface:( b)cross-section (a)4.3 21 00200 203040 Energy /k\ 20(deg) Fig. 2. EDS and XRD spectrum of CVD B coating(deposited at 1000C for 10h):(a) EDS;( b)XRD. Fig. 3 gies of CVD SiC deposited on:(a)CVD B; (b)CVD SiC. Fig 4. Morphologies of the SiC/B/SiC coating after oxidized at 700C for 900 min: (a)surface: ( b)crack sealing174 Y. Liu et al. / Materials Science and Engineering A 466 (2007) 172–177 Fig. 1. Surface and cross-section morphology of CVD B on CVD SiC coating (deposited at 1000 ◦C for 10 h): (a) surface; (b) cross-section. Fig. 2. EDS and XRD spectrum of CVD B coating (deposited at 1000 ◦C for 10 h): (a) EDS; (b) XRD. Fig. 3. Morphologies of CVD SiC deposited on: (a) CVD B; (b) CVD SiC. Fig. 4. Morphologies of the SiC/B/SiC coating after oxidized at 700 ◦C for 900 min: (a) surface; (b) crack sealing