TOSHBA Trench SBD Structure Features Metal VF-IR Trade-off Curve Trench Conventional sBd SBD (1)Low VF and Low IR Metal R (sTable IR Improve Trade-off Planar (3)Small Package Trench sBD SBD Example VE Max Part Electrical characteristics Remark Ratings Number VRRM lF(Av) RRM l V2=5V Vo=30V CRSO130V 1A037V. 0.7A60UA TYP 1.5mA MAX LOW VE CRS0230V 1A 0.40V MAX. O.7A15UA TYP. 50UA MAX. LOw IR& LOWVF1 CRSO330V 1A045V MAX.0.7A 0.5UA TYP. 100UA MAX LOW R CRS01. VEM=0.37V CRS03: IR=O.5UA@ VR=5V Very Low Forward Drop Lowest Leakage Current at the Actual CRS02: VFM=0, 4v&R=50UA System Bus Voltage Because of advanced trench structure Best Suited for Use in the voltage Regulation Circuit of Cellular Phones 2003 Dec DPO54000801 5125/12 2003 Dec DP0540008_01 (1)Low VF and Low IR (2)Stable IR (3)Small Package Structure Structure Trench SBD Metal A K P K Planar SBD Metal A P Part Max. Ratings Electrical Characteristics Remark Number VRRM IF(AV) VFM IF VR=5V VR=30V CRS01 30V 1A 0.37V MAX. 0.7A 60uA TYP. 1.5mA MAX. Low VF CRS02 30V 1A 0.40V MAX. 0.7A 15uA TYP. 50uA MAX. Low IR & Low VF CRS03 30V 1A 0.45V MAX. 0.7A 0.5uA TYP. 100uA MAX. Low IR IRRM CRS02 : VFM=0.4V & IR=50uA Because of Advanced Trench Structure Features Features VF - IR Trade-off Curve VF IR Trench SBD Conventional SBD Improve Trade-off CRS03 : IR=0.5uA @ VR=5V Lowest Leakage Current at the Actual System Bus Voltage Best Suited for Use in the Voltage Regulation Circuit of Cellular Phones CRS01 : VFM=0.37V Very Low Forward Drop Example Trench SBD