b) For plasma etching, explain concisely how selectivity and anisotropy can be controlled by choice of etching parameters. [ 7] c)If you are etching the following sample, sketch what profiles you Nitride mask might expect from these three etch processes, and explain why:&K i etching in Koh solution li etching in an hf and nitric acid mixture iiL Ion millib) For plasma etching, explain concisely how selectivity and anisotropy can be controlled by choice of etching parameters. [7] c) If you are etching the following sample, sketch what profiles you Si (100) f Nitride mask might expect from these three etch processes, and explain why: [8] i. etching in KOH solution ii. etching in an HF and nitric acid mixture iii. Ion milling