Composition profile for ion implantation If the depth is x, the impurity concentration C(r)is approximated by a gaussian x-R C x=c.ex 2△R2 where Cn is the peak concentration, R, the projected range and AR the standard deviation of the projected range(vertical straggle) The implanted dose is given by @(Number/area) Q=v2m△RCp So a given dose will determine the peak concentration 3.155J/6.152J.2003Composition profile for ion implantation If the depth is x, the impurity concentration C ( x) is approximated by a gaussian Ê C x) = Cp expÁ- (x - Rp )2 ˆ ( Á 2 D R2 ˜˜ p Ë ¯ where Cp is the peak concentration, Rp the projected range and D Rp the standard deviation of the projected range (vertical straggle). The implanted dose is given by Q (Number/area) • Q = Ú C x( )dx -• Q = 2 p D RP CP So a given dose will determine the peak concentration. 3.155J/6.152J, 2003 16