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G. Brauer et al. / Applied Surface Science 252(2006)3342-335 335 [7 Silicon carbide and related materials 2004, in: R Nipoti, A. [21] G. Brauer, w. Anwand, w. Skorupa, A.G. Revesz, J. Kuri- Poggi, A. Scorzoni(Eds ) Mater. Sci. Forum. vol. 483-485 plach, Phys. Rev. B 66(2002)195331 Trans Tech Publications, Uetikon-Zuinich. 2005 [ 22] G. Brauer, M.J. Puska, M. Sob, T Korhonen, Nucl. Eng Des. [8]R. Krause-Rehberg, H. Leipner, Positrons in Semiconduc 158(1995)149 tors-Defect Studies, Springer, Heidelberg, 1999. [23] w. Anwand, G. Brauer, J. Kuriplach, w. Skorupa. Mater. Sci. 19]GBrauer, w. Anwand, P G. Coleman, w Skorupa, Vacuum 78 Forum445-446(2004)36 (2005)131 [24 For a recent review, see O.K. Andersen, O. Jepsen, M. Sob, in 10] G. Binnig, K F. Quate, C. Gerber, Phys. Rev. Lett. 56(1986) M. Yussouff (Ed ) Electronic Band Structure and Its Applica- ons, Springer, Berlin, 1987, p. I [11 C. Teichert, Phys. Rep 365(2002)335. [25] E. Boronski, R.M. Nieminen, Phys. Rev. B 34(1986)3820 [12]G. 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