SOLUTION 2.a)Aahs=1cm2,r=20cm,Ts=1500C(1773K) P 28 甲27m4m from table. pl= 2x10-Torr 2×103x[3( (Pa/Torr)]Icm2√293×32 =23×103Pa=1.7×10-Tomr 4π×202cm2√1773×28 b)λ= 万dP 23 cm(using T, P of Si) c) There are virtually no collisions between O, molecules in the chamber, for that matter between O2 and Si vapor molecules. Both species do collide with walls of chamber. Without collisions, the two gases(Si, O,)are not in equilibrium Also Si vapor follows a straight line path to substrate. It is only on the substrate that Si has a chance to interact with O,3 SOLUTION: 2. a) Acrucible = 1 cm2 , r = 20 cm, TSi =1500 C (1773K) † JO2 JSi =1 = PO2 Peq.vap Si ¥ 2pkTSi mSi 2pkTH2OmO2 Acru 4pr 2 , mSi = 28 amu. † mO2 = 32 amu from table, † PSi 1500 C @ 2 ¥10-3 Torr † PO2 = 2 ¥10-3 ¥[133(Pa Torr)]1cm 2 293 ¥ 32 4p ¥202 cm2 1773¥ 28 = 2.3 ¥10-5 Pa =1.7 ¥10-7 Torr b) † l = kT 2pd2 PTot = 23 cm (using T, P of Si) c) There are virtually no collisions between O2 molecules in the chamber, for that matter between O2 and Si vapor molecules. Both species do collide with walls of chamber. Without collisions, the two gases (Si, O2) are not in equilibrium. Also Si vapor follows a straight line path to substrate. It is only on the substrate that Si has a chance to interact with O2