回回回回 MULTI PLEXINO FIGURE 83.11 (a)generalized drive circuits for strobed operation. ( b)Block diagram of a strobed (multiplexed) six-digit LED display. (Source: S. Gage et al, Optoelectronics/Fiber-Optics Applications Manual, 2nd ed, New York: Hewlett-Pack ard/McGraw-Hill, 1981, Pp 5.25, 5. 23. with permis Defining Terms External quantum efficiency: The proportion of the photons emitted from the pn junction that escape the device structure(but sometimes alternatively defined as nine) Injection electroluminescence: Electroluminescence is the general term for optical emission resulting from the passage of electric current; injection electroluminescence refers to the case where the mechanism involves the injection of carriers across a pn junction Internal quantum efficiency: The product of injection efficiency and radiative efficiency corresponds to the ratio of power radiated from the junction to electrical power supplied. Related Topic 22 1 Physical Properties References J. Allison, Electronic Engineering Semiconductors and Devices, 2nd ed, London: McGraw-Hill, 1990 M. Forbes and B. B Brey, Digital Electronics, Indianapolis: Bobbs-Merrill, 1990. S. Gage, D. Evans, M. Hodapp, H. Sorensen,R Jamison, and R. Krause, Optoelectronics/Fiber-Optics Applications Manual, 2nd ed. New York: Hewlett-Packard/McGraw-Hill, 1981 D Jiles, Introduction to the Electronic Properties of Materials, London: Chapman Hall,1994 S. Nakamura, " A bright future for blue/green LEDs, " IEEE Circuits Devices, 11(3),19-23, 1995 D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, Boston: Irwin, 1992 R. E Pierret, Semiconductor Device Fundamentals, New York: Addison-Wesley, 1996. S. M. Sze, Semiconductor Devices: Physics and Technology, New York: Wiley, 1985 S. Wang, Fundamentals of Semiconductor Theory and Device Physics, Englewood Cliffs, N J. Prentice-Hall, 1989 E S. Yang, Microelectronic Devices, New York: McGraw-Hill, 1988 e 2000 by CRC Press LLC© 2000 by CRC Press LLC Defining Terms External quantum efficiency: The proportion of the photons emitted from the pn junction that escape the device structure (but sometimes alternatively defined as hi he). Injection electroluminescence: Electroluminescence is the general term for optical emission resulting from the passage of electric current; injection electroluminescence refers to the case where the mechanism involves the injection of carriers across a pn junction. Internal quantum efficiency: The product of injection efficiency and radiative efficiency corresponds to the ratio of power radiated from the junction to electrical power supplied. Related Topic 22.1 Physical Properties References J. Allison, Electronic Engineering Semiconductors and Devices, 2nd ed., London: McGraw-Hill, 1990. M. Forbes and B. B. Brey, Digital Electronics, Indianapolis: Bobbs-Merrill, 1990. S. Gage, D. Evans, M. Hodapp, H. Sorensen, R. Jamison, and R. Krause, Optoelectronics/Fiber-Optics Applications Manual, 2nd ed., New York: Hewlett-Packard/McGraw-Hill, 1981. D. Jiles, Introduction to the Electronic Properties of Materials, London: Chapman & Hall, 1994. S. Nakamura, “A bright future for blue/green LEDs,” IEEE Circuits & Devices, 11(3), 19–23, 1995. D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, Boston: Irwin, 1992. R. F. Pierret, Semiconductor Device Fundamentals, New York: Addison-Wesley, 1996. S. M. Sze, Semiconductor Devices: Physics and Technology, New York: Wiley, 1985. S. Wang, Fundamentals of Semiconductor Theory and Device Physics, Englewood Cliffs, N.J.: Prentice-Hall, 1989. E. S. Yang, Microelectronic Devices, New York: McGraw-Hill, 1988. FIGURE 83.11 (a) Generalized drive circuits for strobed operation. (b) Block diagram of a strobed (multiplexed) six-digit LED display. (Source: S. Gage et al., Optoelectronics/Fiber-Optics Applications Manual, 2nd ed., New York: Hewlett-Pack￾ard/McGraw-Hill, 1981, pp. 5.25, 5.23. With permission.)