Chemical Vapor Deposltlon(CVD) Processes: gift of Slo2-Expose Si to steam = uniform insulating layer or metal film growth: high vacuum, single element Contrast with CVD: toxic, corrosive gas flowing through valves T up to 1000 C, multiple simultaneous reactions, gas dynamics, dead layers.. whose ldea was It? DIELECTRIC SIN Sio POLY- SI GATE OXIDE BARRIER METAL SOURCE DRAIN WAFER All layers above poly-Si made by cvD, except gate oxide and aluminum Mon.. Sept. 15. 2003Chemical Vapor Deposition (CVD) Processes: gift of SiO2 - Expose Si to steam => uniform insulating layer… or metal film growth : high vacuum, single element… CVD: toxic, corrosive gas flowing through valves, T … Contrast with up to 1000°C, multiple simultaneous reactions, gas dynamics, dead layers… whose idea was it? All layers above poly-Si made by CVD, except gate oxide and aluminum Mon., Sept. 15, 2003 1