维普资讯http://www.cqvip.com 光学与光电技术 第6卷 用正弦曲线补偿来设计掩膜板图形,图5(a)聚甲基异丙烯酸(PMMA)微结构制作技术。为 为正弦曲线掩膜板图形,图5(b)为用正弦曲线补了量化实际制造的三维PMMA微结构的误差 偿掩膜板制造的的微正弦曲线结构。 提出了补偿设计掩膜板技术,即考虑到了X射 线吸收能量分布与微结构的结构形状关系来修 正掩膜板图形的技术。X射线光刻掩膜板从等 腰三角形变为半圆图形使得微注射针阵列的强 度得到增强。该种微针的材质为PMMA,有足 够的强度和尖度,可作为镍电镀工艺大批量生 产的模版。实验也采用了X射线移动光刻工 艺,通过正弦曲线掩膜板制造了高精度的的微 图5(a)正弦曲线掩膜板图形 正弦曲线结构 Fig 5(a) Sine curve mask pattern 参考文献 [1] P Bley, J Mohr. The LIGA process-A microfabrica tion technology [J]. Future Electron Devices Jour- 1994,5(1):34-37 [2] W Ehrfeld, H Lher. Deep X-ray lithography for the production of three-dimensional microstructures fror nd ceramics [J]. Radiat. Phys. [3 H Ueno, S Sugiyama. Novel shaped microstructures 图5(b)用正弦曲线掩膜板制造的的微正弦曲线结构 processed by deep X-ray lithography using plane pat H 5(b) Fabricated sine curve structure using [C]. Pre Sine curve mask HARMSTOl, Baden-baden, Germany, 2001 [4 Susumu Sugiyama, Sommawan Khumpuang, Gaku Kaw 4结论 aguchi. Plane-pattern to cross-section transfer (PCT) technique for deep x-ray lithography and applications]. J. Micromec. Microeng, 2004, 14(10): 1394-1404 基于X射线移动光刻技术建立了一种三维 Development of 3-D Microfabrication Method by SR Lithography LI Yi-gui HORADE M SUGIYAMA Su (1 Institute of Micro/ Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China Department of Microsystem, Ritsumeikan University, Kusatsu Shiga 525-857, Japan Abstract PMMA(Polymethyl Methacrylate) microstructures fabricated by X-ray lithography with plane-pattern to cross- section transfers technique has a direct influent from the absorber on X- ray mask pattern. due to the dependency between the absorbed X-ray energy distribution in PMMa and the shape of absorber on the X-ray mask, without the compensation nask design, the deformed shapes of sloped side-wall on the exposed structures are observed. The factors causing the de formation are investitated. The effect of dose-depth nonlinear curve is the most possible cause of the problem. Based on the measurement of errors occurred between the 2-D shape of mask pattern and the resulting wall of fabricated 3-D structure, the strength of microneedle is improved by changing the mask pattern from a double right triangular pattern to a double semi-cir- ular pattern. Moreover, in order to clarify the practical error, we have developed a useful graphical data of the structural Key words polymethyl methacrylate; synchrotron radiation; X- ray lithography; micro needle; 3-D structure84 光 学 与 光 电 技 术 第 6卷 用正弦曲线补偿来设计掩膜板 图形 ，图 5(a) 为正弦曲线掩膜板图形 ，图 5(b)为用正弦 曲线补 偿掩膜板制造 的的微正弦曲线结构 。 图 5(a) 正弦 曲线掩膜板图形 Fig．5(a) Sinecurvemaskpattern 图 5(b) 用正弦 曲线掩膜板制造的的微正弦曲线结 构 图 5(b) Fabricatedsinecurvestructureusing Sinecurvemask pattern 4 结 论 基 于 X射线移动光刻技术建立 了一种三维 聚 甲基异丙烯 酸(PMMA)微结 构制作技 术 。为 了量化实际制造 的三维 PMMA微结构 的误差 ， 提 出了补偿 设计 掩膜 板技 术 ，即考虑 到 了 X射 线 吸收能量分布 与微结构 的结构形状 关 系来修 正掩膜板 图形 的技术 。X射 线光刻 掩膜板 从等 腰三 角形变为半 圆图形使 得微注射 针阵列 的强 度 得 到增 强 。该 种 微 针 的 材 质 为 PMMA，有 足 够 的强度 和尖 度 ，可作 为镍 电镀 工 艺大 批量 生 产 的模 版 。实 验 也 采 用 了 X射 线 移 动光 刻 工 艺 ，通过正弦曲线 掩膜板 制造 了高精 度 的的微 正弦 曲线结构 。 Eli E2] [3] [4] 参 考 文 献 PBley，JMohr．TheLIGA process—A microfabrica￾tiontechnology[J]．FutureElectronDevicesJour— na1，1994，5 (1)：34-37． W Ehrfeld，H Lher． Deep X-ray lithographyforthe productionofthree-dim ensiona1microstructuresfrom metals，polymers，andceramics[J]．Radiat．Phys． Chem．。1995，45(3)：349—365． H U eno。S Sugiyam a． Nove1shaped microstructures processed by deep X-ray lithography usingplanepat— tern-cross section transfer techniquelC 1． Proc． HARM KPO1，Baden-baden，Germ any，2001． SusumuSugiyama，SommawanKhumpuang，GakuKaw￾aguchi． Plane-pattern to cross-section transfer (PCF) techniquefordeepx-raylithographyandapplications[J]． J．Micmmec~Microeng．，2004，14(10)：1394-1404． Developmentof3一D M ierofabrieation M ethod bySR Lithography LIYi—gui HORADE M 0 SUGIYAM A Susum u0 (1InstituteofM icro／NanoScienceandTechnology，ShanghaiJiaotongUniversity，Shanghai200030，China； 2DepartmentofMicrosystem，RitsumeikanUniversity，KusatsuShiga525—857，Japan) Abstract PM M A (Polym ethylM ethacrylate)m icrostructuresfabricated by X-ray lithography with plane-pattern to cross￾sectiontransferstechniquehasadirectinfluentfrom theabsorberonX-raymaskpattern．Duetothedependencybetween the absorbed X-ray energydistributionin PM M A and theshapeofabsorberon the X-ray mask，withoutthe com pensation for mask design，thedeform ed shapesofsloped sidewallon theexposed structuresareobserved． Thefactorscausing thede— formationareinvestitated．Theeffectofdose-depthnonlinearcurv eisthemostpossiblecauseoftheproblem． Basedon the m easurementoferrorsoccurredbetweenthe2-D shapeofm askpatternand theresultingwalloffabricated3-D structure，the strengthofmicroneedleisimprovedbychangingthemaskpattern from adoubleright—triangularpatterntoadoublesemi—cir— cularpattern． M oreover，inorderto clarifythepracticalerror，wehavedeveloped a usefulgraphicaldataofthestructural profilesversusabsorbedX-rayenergy． Keywords polym ethylmethacrylate；synchrotron radiation；X-ray lithography；micro needle；3-D structure 维普资讯 http://www.cqvip.com