6.152J3.155J 1-dimensional defects: We saw soluble impurities in Si 6.12J/3.155J Microelectronic processing T/7 020 Impurity content(cm-3) 1-dimensional defects: More point defects ○○○ Interstitial Frankel defect Self Substitutional Strain field of vacancy. interstitial 中 Strain and surface energy can be reduced ○必 Vacancy = void ○○○○ when concentration > equilibrium Nov.26,20036.152J/3.155J 4 7 Nov.26 , 2003 6.12J / 3.155J Microelectronic processing 1-dimensional defects: We saw soluble impurities in Si. 1.0 T/Tm 1020 1021 Impurity content (cm-3) B As P Smix Si Impurity -TSmix Si Impurity From Phase diagram 8 Nov.26 , 2003 6.12J / 3.155J Microelectronic processing 1-dimensional defects: More point defects Interstitial impurity Substitutional impurity Vacancy Self interstitial V-I pair = Frankel defect Strain field of vacancy… Strain and surface energy can be reduced by agglomeration: Vacancy => void, Interstitial => precipitate …when concentration > equilibrium interstitial