VoLUME 45. NUMBER 6 PHYSICAL REVIEW LETTERS 11 AUGUST 1980 New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance K. y, Klitzin Musikalisches Institu r700 Republic of Germany, and ocitfeld-Magnetabor des Max-Planck-Instituts fiir Festkorperforschung, F-38042 Grenoble, france a G. Dorda Forschungslaboratorien der Siemens AG, D-8000 Miinchen, Federal Republic of Germany and epper Cavendish Laboratory, Cambridge CB3 OHE, United kingdom (Received 30 May 1980) Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, expe rimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported 73.40.Qhttp://10.107.0.68/~jgche/ 整数和分数量子霍尔效应 8