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So Sio2 growth occurs at inside surface Oxide Si+O2→S02 Si+ 2H20=Si02+ 2H wth, more porous, lower quality Unsaturated Bond 0262nm 0.162nm Oxyge con Oxygen Silicon Sept19,2003 3.155J6.152J2 So SiO2 growth occurs at inside surface Si + O2 Æ SiO2 or Si + 2H2O = SiO2 + 2H2 (faster growth, more porous, lower quality) O2 SiO2 Si dtOxide Sept. 19, 2003 3.155J/6.152J
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