80 HBT ◆HEMT ≥ □□ ■N■ 6080100 ancy(GHz) FIGURE 43.5 Performance status of single-chip power MMIC amplifiers using MESFET, HFET, HEMT, and HBT fficiency Power MMIC Performance Frequency o of Po(w) PAE (% Gain(dB) 2.0 8.5 10.0 1 11.5 12 dvances in Monolithic microw Millimeter Wave Integrated Circuits,IEEE Int. Circuits and Systems Digest, pp. 783-786. e 1992 IEEE. With permission W.L. Pribble and E L. Griffin, An ion-implanted 13w C-band d MMIC ith 60% peak power added efficiency, IEEE 1996 Microwave and mi ter-Wave Monolithic Circuits Symposium Digest, Pp. 25-28. e 2000 by CRC Press LLC© 2000 by CRC Press LLC FIGURE 43.5 Performance status of single-chip power MMIC amplifiers using MESFET, HFET, HEMT, and HBT technologies. TABLE 43.2 Single-Chip High-Efficiency Power MMIC Performance Frequency No. of (GHz) Stages PO (W) PAE (%) Gain (dB) 5.2 1 12.0* 60 9 5.5 1 1.7 70 8 8.5 2 3.2 52 — 10.0 1 5.0 48 7 10.0 1 6.0 44 6 11.5 2 3.0 42 12 Source: D. Willems and I. Bahl, “Advances in Monolithic Microwave and Millimeter Wave Integrated Circuits,” IEEE Int. Circuits and Systems Symp. Digest, pp. 783–786. © 1992 IEEE. With permission. *W.L. Pribble and E.L. Griffin, “An ion-implanted 13W C-band MMIC with 60% peak power added efficiency,” IEEE 1996 Microwave and Millime￾ter-Wave Monolithic Circuits Symposium Digest, pp. 25–28