Examples of MCMC:Reaction-Diffusion (R-D)model >Defect-induced threshold voltage shift/instability (VT)has been a reliability issue in metal-oxide-semiconductor (MOS)transistors > Interface defects are generally assumed to arise from the dissociation of interfacial Si-H bonds at the silicon/dielectric interface The dissociation of Si-H bond during the defect creation The repassivation of broken Si-bonds during the defect annealing H diffusion H2 diffusion and H-H2 inter-conversion.Examples of MCMC: Reaction-Diffusion (R-D) model  Defect-induced threshold voltage shift/instability (VT) has been a reliability issue in metal-oxide-semiconductor (MOS) transistors  Interface defects are generally assumed to arise from the dissociation of interfacial Si-H bonds at the silicon/dielectric interface  The dissociation of Si-H bond during the defect creation  The repassivation of broken Si-bonds during the defect annealing  H diffusion  H2 diffusion and H-H2 inter-conversion