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Y. Yuan, J. Pan/Journal of Crystal Growth 193(1998)585-591 spouting from the gas inlet diverges into the an- [4]T Takahashi,KSugiyama, H Itoh,JElectrochem. Soc ulus, a bigger percentage of the vapor phase is 11701970)541. taken to form the Tic whiskers. This increases the [5] D.T. Morelli, Phys. Rev. B 44(1991)5453. collision of the vapor species on to the growing [6Z. Wokulski, K. Wokulska, J Crystal Growth 62(1983) fronts and also accelerates the mass transition of [7 N. Tamari, A Kato, J. Crystal Growth 46(1979)221. the Cvd process [8Z. Wokulski, J. Crystal Growth 82(1987)427. [9]JS. Pan, Y.H. Chen, Acta Mater. Composite Sin. 12 (1995)1. References [10JY H. Chen, J.S. Pan, X.Y. Huang, J. Crystal Growth 172 (197)171 para, Y Nishida, M. Yamada, I Shirayanagi, T. [11] CJ. Lim, K B Mathur, A I.Ch.E.J. 22(1976)674. later. Sci. Lett. 6( 1987)1313 [12] H. Littman, M.H. Morgan Ill, P.V. Narayanan, SJ. K P F. Becher, Am. Ceram Soc. Bull. 64(1985) Can. J. Chem. Eng. 63(1985)188. [13]JY. Day, H. Littman, M.H. Morgan Ill, Z.B. Grbavcic, B3L.E. Toth, Transition Metal Carbides and Nitrides, Aca D E. Hadzismajlovic, D.V. Vukovic, Chem. Eng. Sci. 46 demic Press. New York, 1971 (1991)773.spouting from the gas inlet diverges into the annulus, a bigger percentage of the vapor phase is taken to form the TiC whiskers. This increases the collision of the vapor species on to the growing fronts and also accelerates the mass transition of the CVD process. References [1] H. Matsubara, Y. Nishida, M. Yamada, I. Shirayanagi, T. Imai, J. Mater. Sci. Lett. 6 (1987) 1313. [2] G.C. Wei, P.F. Becher, Am. Ceram. Soc. Bull. 64 (1985) 298. [3] L.E. Toth, Transition Metal Carbides and Nitrides, Academic Press, New York, 1971. [4] T. Takahashi, K. Sugiyama, H. Itoh, J. Electrochem. Soc. 117 (1970) 541. [5] D.T. Morelli, Phys. Rev. B 44 (1991) 5453. [6] Z. Wokulski, K. Wokulska, J. Crystal Growth 62 (1983) 439. [7] N. Tamari, A. Kato, J. Crystal Growth 46 (1979) 221. [8] Z. Wokulski, J. Crystal Growth 82 (1987) 427. [9] J.S. Pan, Y.H. Chen, Acta Mater. Composite Sin. 12 (1995) 1. [10] Y.H. Chen, J.S. Pan, X.Y. Huang, J. Crystal Growth 172 (1997) 171. [11] C.J. Lim, K.B. Mathur, A.I.Ch.E. J. 22 (1976) 674. [12] H. Littman, M.H. Morgan III, P.V. Narayanan, S.J. Kim, Can. J. Chem. Eng. 63 (1985) 188. [13] J.Y. Day, H. Littman, M.H. Morgan III, Z.B. Grbavcic, D.E. Hadzismajlovic, D.V. Vukovic, Chem. Eng. Sci. 46 (1991) 773. Y. Yuan, J. Pan / Journal of Crystal Growth 193 (1998) 585–591 591