Deal-Grove model of silicon oxidation Sio, growth occurs at si/ sio interface because D(Sio, )>>D'(Sio, Growth Process limited by 1. P(O2)=Pg a Cg Concentration layer: Sio, Si 2. Transport O, to Sio, surface across dead layer J 3. Adhesion of C(O ) at SiO, surface Co c 4. Diffusion O, through Sio2 J2 5. Chemical reaction rate J Sept.19,2003 3.155J/6.152JDeal-Grove model of silicon oxidation SiO2 Si SiO O2 2 growth occurs at Si / SiO2 interface because DO2 (SiO2) >> DSi(SiO2) Growth Process limited by O2 1. P(O2) = Pg µ Cg 2. Transport O2 to SiO2 surface across dead layer J1 3. Adhesion of Cs(O2) at SiO2 surface C0 4. Diffusion O2 through SiO2 J2 Concentration SiO2 Si Cg Cs Co Ci dead layer J1 J2 J3 x 5. Chemical reaction rate J3 Sept. 19, 2003 3.155J/6.152J 7