有色金属材料与工程 2020年第41卷 [20] ZENG C, ZHANG S M, JI L, et al. Room-temperature [32] MENEGHINI M, DAL L M, TRIVELLIN N, et al. Chip laser diodes with a lifetime of 15.6 hours]. Chinese LEDsUI. Microelectronics Reliability, 2012, 52(5) Physics Letters, 2010, 27(11): 129-132 804812 [21] ZHAO D G, YANG J,LU Z S, et al. Fabrication of [33] MA X, ZHONG L. Advances in high-power room temperature continuous-wave operatio based semiconductor diode lasers[cp/semiconductor Lasers ultraviolet laser diodes J. Journal of ser and Applications Ill. International Society for Optics and 17(38) Photonics,2008,6824:682402 [22] LIANG F, YANG J, ZHAO D G, et al. Room- [34] SCHOEDL T SCHWARZ U T. KUMMLER V et al temperature continuous-wave operation of GaN-based Facet degradation of Gan heterostructure laser diodes[] blue-violet laser diodes with a lifetime longer than 1000 Journal of Applied Physics, 2005, 97(12): 123 102 hJ]. Journal of Semiconductors, 2019, 40(2): 02280 [35] QIAN W, SKOWRONSI DE G M. et al. [23] SCHWARZ U T, BRAUN H, KOJIMa K, et al Microstructural characterization of a-Gan films grown Investigation and comparison of optical gain on sapphire by organometallic vapor phase epitaxy] Al, In)Gan laser diodes emitting in the 375 pplied Physics Letters, 1995, 66(10): 1252-1254 nm spectral rangeU]. Proc Spie, 2007 [36] NAGAHAMA S, IWASA N, SENOH M, et al. High- 24 NAKAMURA S. SENOH M. NAGAHAMA SI et al. power and long-lifetime In GaN multi-quantum-well laser Blue InGaN-based laser dic diodes grown wavelength of 450 nm J]. Applied Physics Letters, 2000, substrates]. Japanese Journal of Applied Physics, 2000, 76(1):22 39(7A):L647 [25] RUMBOLZ C, BRUDERL G, LEBER A, et al [37 ROSSeTTI M. SMEETON T M. TAN WS. et al Development of Alln gan based blue-violet lasers on Degradation of In Ga N/Ga n laser diodes analyzed by Gan and SiC substrates]. Physica Status Solidi A 2006,203(7):5 microphotoluminescence and microelectroluminescence [26] MURAYAMA M, NAKAYAMA Y, YAMAZAKI K,et mappings]. Applied Physics Letters, 2008, 92(15) 151110 al. Watt-class green(530 nm) and blue(465 nm)laser des]. Physica Status Solidi A, 2018, 215(10) [381 MENEGHINI M. TRIVELLIN N. ORITA K. et al Degradation of IngaN-based laser diodes analyzed by [27] NAKATSU Y, NAGAO Y, KOZURU K, et al. high- means of electrical and optical measurements[]. Applied efficiency blue and green laser diodes for laser Physics Letters, 2010, 97(26):263501 displays[C]/Gallium Nitride Materials and Devices XIV. [39] MENEGHINI M, MENEGHESSO G. TRICelliN N, et ociety for Optics and Photonics, 2019, al. Extensive analysis of the degradation of Blu-Ray laser 10918:109181D diodes J]. IEEE Electron Device Letters, 2008, 29(6 28] MIYOSHI T. YANAMOTO T KOZAKI T et al. Recent 578581 status of white LEDs and nitride LDs[J]. Proceedings of [40] TAKEYA M, MIZUNO T, SASAKI T SPIE-The International Society for Optical Engineering, Degradation in AlGaInN lasers[J]. Physica Status 2008.6894:689414. C,2003(7):2292-2295 [29] MIYOSHI T, MASUI S, OKADA T et al. 510-515 nm [41] MARIOLI M, MENEGHINI M, ROSSI F, et al In GaN-based green laser diodes on c-plane GaN Degradation mechanisms and lifetime of state-of-the-art substrate[J]. Applied Physics Express, 2009, 2(6) green laser diodes. Physica Status Solidi A, 2015, 062201 212(5):974979. [30] LIU J P, LI Z C, ZHANG L Q, et al. Realization of [42] WEN P Y, ZHANG SM,LID Y, et al. Investigation of In Gan laser diodes above 500 nm by growth rapid degradation in GaN-based blue laser diodes[J] optimization of the In GaN/Gan active region]. Applie Superlattices and Microstructures, 2016, 99: 72-76 Physics Express, 2014, 7(11): 111001 43 DE S C. CARIA A. RENSO N. et al. Evidence of 31] SCHREIER L A. Electrostatic damage susceptibility of semiconductor devices[c]/16th International Reliability optoelectronic devices[]. Applied Physics Express, Physics Symposium IEEE, 1978: 151-153. 2018,1l(11):111002ZENG C, ZHANG S M, JI L, et al. Room-temperature continuous-wave operation of InGaN-based blue-violet laser diodes with a lifetime of 15.6 hours[J]. Chinese Physics Letters, 2010, 27(11): 129–132. [20] ZHAO D G, YANG J, LIU Z S, et al. Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes[J]. Journal of Semiconductors, 2017(38): 3. [21] LIANG F, YANG J, ZHAO D G, et al. Roomtemperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h[J]. Journal of Semiconductors, 2019, 40(2): 022801. [22] SCHWARZ U T, BRAUN H, KOJIMA K, et al. Investigation and comparison of optical gain spectra of (Al, In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range[J]. Proc Spie, 2007: 6485. [23] NAKAMURA S, SENOH M, NAGAHAMA S I, et al. Blue InGaN-based laser diodes with an emission wavelength of 450 nm[J]. Applied Physics Letters, 2000, 76(1): 22. [24] RUMBOLZ C, BRUDERL G, LEBER A, et al. Development of AlInGaN based blue-violet lasers on GaN and SiC substrates[J]. Physica Status Solidi A, 2006, 203(7): 5. [25] MURAYAMA M, NAKAYAMA Y, YAMAZAKI K, et al. Watt-class green (530 nm) and blue (465 nm) laser diodes[J]. Physica Status Solidi A, 2018, 215(10): 1700513. [26] NAKATSU Y, NAGAO Y, KOZURU K, et al. Highefficiency blue and green laser diodes for laser displays[C]//Gallium Nitride Materials and Devices XIV. International Society for Optics and Photonics, 2019, 10918: 109181D. [27] MIYOSHI T, YANAMOTO T, KOZAKI T, et al. Recent status of white LEDs and nitride LDs[J]. Proceedings of SPIE - The International Society for Optical Engineering, 2008, 6894: 689414. [28] MIYOSHI T, MASUI S, OKADA T, et al. 510-515 nm In GaN-based green laser diodes on c-plane GaN substrate[J]. Applied Physics Express, 2009, 2(6): 062201. [29] LIU J P, LI Z C, ZHANG L Q, et al. Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region[J]. Applied Physics Express, 2014, 7(11): 111001. [30] SCHREIER L A. Electrostatic damage susceptibility of semiconductor devices[C]//16th International Reliability Physics Symposium. IEEE, 1978: 151−153. [31] MENEGHINI M, DAL L M, TRIVELLIN N, et al. Chip and package-related degradation of high-power white LEDs[J]. Microelectronics Reliability, 2012, 52(5): 804–812. [32] MA X, ZHONG L. Advances in high-power semiconductor diode lasers[C]//Semiconductor Lasers and Applications III. International Society for Optics and Photonics, 2008, 6824: 682402. [33] SCHOEDL T, SCHWARZ U T, KUMMLER V, et al. Facet degradation of GaN heterostructure laser diodes[J]. Journal of Applied Physics, 2005, 97(12): 123102. [34] QIAN W, SKOWRONSKI M, DE G M, et al. Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy[J]. Applied Physics Letters, 1995, 66(10): 1252–1254. [35] NAGAHAMA S, IWASA N, SENOH M, et al. Highpower and long-lifetime InGaN multi-quantum-well laser diodes grown on low-dislocation-density GaN substrates[J]. Japanese Journal of Applied Physics, 2000, 39(7A): L647. [36] ROSSETTI M, SMEETON T M, TAN W S, et al. Degradation of In Ga N/Ga N laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings[J]. Applied Physics Letters, 2008, 92(15): 151110. [37] MENEGHINI M, TRIVELLIN N, ORITA K, et al. Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements[J]. Applied Physics Letters, 2010, 97(26): 263501. [38] MENEGHINI M, MENEGHESSO G, TRICELLIN N, et al. Extensive analysis of the degradation of Blu-Ray laser diodes[J]. IEEE Electron Device Letters, 2008, 29(6): 578–581. [39] TAKEYA M, MIZUNO T, SASAKI T, et al. Degradation in AlGaInN lasers[J]. Physica Status Solidi C, 2003(7): 2292–2295. [40] MARIOLI M, MENEGHINI M, ROSSI F, et al. Degradation mechanisms and lifetime of state-of-the-art green laser diodes[J]. Physica Status Solidi A, 2015, 212(5): 974–979. [41] WEN P Y, ZHANG S M, LI D Y, et al. Investigation of rapid degradation in GaN-based blue laser diodes[J]. Superlattices and Microstructures, 2016, 99: 72–76. [42] DE S C, CARIA A, RENSO N, et al. Evidence of optically induced degradation in gallium nitride optoelectronic devices[J]. Applied Physics Express, 2018, 11(11): 111002. [43] 60 有 色 金 属 材 料 与 工 程 2020 年 第 41 卷