Spin-based devices Metal length scales shorter 6.12J/3.155J Microelectronic processing Mobile carrier Scatters from ion 光 Spin-dependent resistivity Spin memory is lost over x, t M(x) Dec.10,2003D e c. 10 , 2 0 0 3 6.12J / 3.155J Microelectronic processing Spin-based devices Metal length scales shorter Mobile carrier e- e- e￾Scatters from ion Spin-dependent r < r < r resistivity x M (x) Spin memory is lost over x, t e- M (x) x e-