6.152J/3.155J What will we cover in next few lectures? Chemical vapor deposition(CVD) Mon. Sept 15 Most widely used method for growth of mlcro-electronlc grade semIconductor fiim also widely used for metals and oxides Oxidatio Wed. Sept 17 Key advantage of SE: stable uniform oxide How control Its growth, thickness, quallty Diffusion and ion implantation Mon. Sept 29 How semIconductor surfaces are doped Wed. Oct. 1 Physical vapor deposition(PVD) Nov 5.12 Growth of quallity films by sputter deposltlon or evaporation These processes take place in vacuum or controlled environment Therefore, need to understand vacuum technology,. gas kinetics. 6.152J3.155J Wed, Sept 10, 2003 Gas Kinetics and Vacuum Technology How far does a molecule travel between collisions? m 5x 10-26 k velocity molecule mpact parameter, scattering cross section T d2 Mean free path=x Volume swept out by 1 molecule between collisions=λxd 6.152J3.155 Wed, Sept 10, 20036.152J/3.155J 6.152J/3.155J 3 What will we cover in next few lectures? • Chemical vapor deposition (CVD) i l mi l i i il al i l l i • Oxidation Wed. Sept 17 i l i i l i i li vacuum technology,… gas kinetics. • Diffusion and ion implantation i Wed. Oct. 1 • Nov 5,12 li il iti i Wed., Sept. 10, 2003 Mon. Sept 15 Most w de y used method for growth of cro-e ectron c grade sem conductor f ms, so w de y used for meta s and ox des Key advantage of S : stab e un form ox de How contro ts growth, th ckness, qua ty These processes take place in vacuum or controlled environment. Therefore, need to understand Mon. Sept 29 How sem conductor surfaces are doped Physical vapor deposition (PVD) Growth of qua ty f ms by sputter depos on or evaporat on 6.152J/3.155J 4 i i l l l l llisi “Movie” d d l le i i i p d2 => l p d 2 Volume swept out by 1 molecule lpd2 i l V 2) L velocity “Snap shot” n = N V = N L3 m 5 x 10-26 kg Wed., Sept. 10, 2003 Gas K net cs and Vacuum Techno ogy How far does a mo ecu e trave between co ons? Mean free path ≡ l mo ecu mpact parameter, scatter ng cross sect on = between collisions = Cons der a vo ume of gas (e.g. N number N, 2