Release and wrinkling of nanomembranes 3-D diagram of linear network Selective etching Nanomembrane Sacrificial layer Substrate Etching front Starting edge Materials: SiGe, InGaAs Materials growth: MBE,(CVD.; or oxidation for thinning Fabrication Method: Etching Mei et al. Adv. Mater. 19, 2124(2007)Release and wrinkling of nanomembranes Substrate Nanomembrane Sacrificial layer Selective etching 3-D diagram of linear network Etching front Starting edge Materials: SiGe, InGaAs Materials growth: MBE, (CVD …); or oxidation for thinning Fabrication Method: Etching Mei et al. Adv. Mater. 19, 2124 (2007)