Avs Lable ondine at www viencedirect com 首页(例1) 具有“全论文”格式的通 通讯作者 Redox deposition of manganese oxide on graphite for supercapacitors 讯 Mengqiang Wuh, Graeme A Snook i George Z Chen "" perck J.Fray (~3000英文字+图表) “ wbwd w Osad Awwal and Maar lerdo ihe可me的mmDE Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 30Z, UK School of Chemical, Environmental and Mining Engineering, University of Nottingham, Unirersity Park, Nottingham NG7 2RD, UK I School of Microelectronics and Solid State Electronics, Unirersity of Electronic Science and Technology of China, Chengdu 610054, PR China 研究工作实施/合 Nat3 MNA BRS LOMKO时mmtp3 Ng'AgcT the capacitance ef the coating in asM LC increased o 45 mfm with the destine time, wp te e min, following w目 the isarithm law. aldine.可p0 w ptential syde on the c a5 M UC confirmed the h由ch 作单位 吧、飞 and capacitive behaviour af the ouwtimp am sassed It i antenatal that th aprlkati ef this seme, fasl and comttllabie reset pettee pror t high sarface arma carmen martials may wirnakeanthy mprove their romance n srerapacitons 关键词,与题目和文摘吻合-1 L==-- Keywords: Redox deposition: Manganese oxide; Cyclic voltammetry; Scanning electron microscopy: Supercapacitors I 1. Introduction RuOr- o exhibits excellent pseudocapacitive be Supercapacitors can be based on ather high surface 10 Fe and great reverwhty (s ol the low abun- item materials ploting the electral doubl dane and high cat of the pcious metal are the layer capacitanc or redon active material taking ad. mayor disadvantage for commercial applications pumas_oChe fast and reversible datchemul n Comequenth, thare are increaing atempts to devdop me allm fas reponse and long cos efective supe non-noble Corresponding author.T:+441514171:1x:-15:3如m如m由用属m如邮 9514115 l as scondary hatters and hence In the past. several of these effort focused en coat lery ot pwudecapasilot, is wual hin flm af the rede actie materils ette the de E-mail address: george chen(@nottingham. ac uk(G Z. Chen) stance, but cost, response rate and tode. Ior example, very high specfc capacitance of (e the concems pb For emple, Fg was lepore for thin films of amorphous byuro ous hydrous ruthenium atide (. manganese aides (aMno,aH O prepared by 通讯作者联系细节 ---------- Ml-pel technaque [Is] Ilowever, when the film war needing auth Td: .44-11s0514171 las .a411s Lade thicker to increase the ttal chargefenerry storage capacity, the relatively high hesitance af the oside asad adder petgchmwsme a ad 10/ Chml educed seriously the reponse speed [16, 17) Anoda mana o 3d Uw Bv All eghs re d10114)m4日日首页（例1） 研究工作实施/合 作单位 通讯作者 具有“全论文”格式的通 讯。 ( ~ 3000英文字+ 图表) 通讯作者联系细节 关键词，与题目和文摘吻合