Intrinsic semiconductor Increasing temperature causes creation of free carriers 1010 cm free carriers at 23C(out of 2x cm-3) Intrinsic Conductivity s):(s):(s):(s):(s):(s):(s):(s):(S (:(:(:(:④:(:③S si)。(si)(si)。(si ⑤(::⑤:⑤ ③::③:(::(:(:(:( s):():):(s):(s):(s):(S):(S):(i Fall 2003-MA Schmidt 3. 155J 6.152]-Lecture 2-Slide 6Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 2 – Slide 6 Intrinsic Semiconductor Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Increasing Temperature Causes Creation of Free Carriers 1010 cm-3 free carriers at 23C (out of 2x1023 cm-3) Intrinsic Conductivity