Planar Process ha Formation of a masking oxide Si rely remo layer Its selective removal Deposition of dopant atoms on Dopant atoms deposited or near the wafer surface A on exposed surfaces Their diffusion into the exposed silicon regions Dopant atoms diffuse into Si t not appreciably into SioPlanar Process • Formation of a masking oxide layer • Its selective removal • Deposition of dopant atoms on or near the wafer surface • Their diffusion into the exposed silicon regions