第一章 绪论 制备不同厚度的薄膜有 自上而下和自下而上两种思想 10 um Modem CMOS top-down VS. bottom-up Beginning of Submicron CMOS 1um Deep UV Litho top-down 90nmn2004 100nm 摩尔定律的驱动 Presumed Limit to Scaling 10 nm Chemistry Biology Intel Technology Leadership Atomic manipulation bottom-up Molecular Electronics 03040506070809101112131415161718 Bloelectronics NEMS Nanotechnology 90 nm 65 nm 45nm 32nm 22nm 14nm 10nm 1 nm SiGe Strained Silicon 1970 1980 1990 2000 2010 2020 intel High-k Metal Gate Moore's Law Tri-Gate第一章 绪论 制备不同厚度的薄膜有 自上而下和自下而上两种思想 摩尔定律的驱动