Defects in Silicon Crystals Stacking Faults 【111 [001 A A.B.C:three different a b [1i1 (111)planes B b' Perfect stacking c c B Stacking of(111)planes viewed along [110]in the diamond structure ESF Induced by oxidation ISF Missing(111)plane B [111】 001] SFs bound by →[i011 dislocations Two-dimensional defects(stacking faults): Along {111)planes Intrinsic:removal of part of a plane of atoms in {111)directions Extrinsic:addition of a partial plane of atoms in (111)directions Oxidation induced stacking faults(OISF):stacking faults grow during oxidation due to absorption of more I.Defects in Silicon Crystals – Stacking Faults A, B, C: three different Perfect stacking (111) planes Induced by oxidation Missing (111) plane SFs bound by dislocations Two-di i l d f t ( t ki f lt ) dimensional d e fects (stacking fault s): • Along {111} planes • Intrinsic: removal of part of a plane of atoms in {111} directions • Extrinsic: addition of a p p {} artial plane of atoms in {111} directions • Oxidation induced stacking faults (OISF): stacking faults grow during oxidation due to absorption of more I