Appendix Il.Table of Physical Constants 419 Electronic Properties of Some Metals Number of free Fermi electrons,Neff Work function Resistivity energy electrons (photoelectric) p[μncm] Material EF [eV] m3 [ev] at20°C Ag 5.5 6.1×1028 4.7 1.59 11.8 16.7×1028 4.1 2.65 Au 5.5 5.65×1028 4.8 2.35 Be 12.0 3.9 4.0 Ca 3.0 2.7 3.91 Cs 1.6 1.9 20.0 Cu 7.0 6.3×1028 4.5 1.67 Fe 4.7 9.71 K 1.9 2.2 6.15 Li 4.7 2.3 8.55 Na 3.2 2.3 4.20 Ni 5.0 6.84 Zn 11.0 3×1028 4.3 5.91 Electronic Properties of Some Semiconductors Gap Mobility Mobility energy of of Work Eg [eV] Conductivity electrons holes function 1 m27 m2 (photoelectric) Material 0K300K 2·m Vs h V·s 中[ev] C(diamond) 5.48 5.47 10-12 0.18 0.12 4.8 Ge 0.74 0.66 2.2 0.39 0.19 4.6 Element Si 1.17 1.12 9×10-4 0.15 0.045 3.6 Sn(gray) 0.08 106 0.14 0.12 4.4 GaAs 1.52 1.42 10-6 0.85 0.04 InAs 0.42 0.36 104 3.30 0.046 III-V InSb 0.23 0.17 8.00 0.125 GaP 2.34 2.26 0.01 0.007 IV-IV a-SiC 3.03 2.99 0.04 0.005 ZnO 3.42 3.35 0.02 0.018 Ⅱ-VI CdSe 1.85 1.70 0.08Appendix II • Table of Physical Constants 419 Electronic Properties of Some Metals Fermi Number of free energy electrons, Neff (photoelectric)  [# cm] Material EF [eV]  elec m tr 3 ons  [eV] at 20° C Ag 5.5 6.1 1028 4.7 1.59 Al 11.8 16.7 1028 4.1 2.65 Au 5.5 5.65 1028 4.8 2.35 Be 12.0 3.9 4.00 Ca 3.0 2.7 3.91 Cs 1.6 1.9 20.0 Cu 7.0 6.3 1028 4.5 1.67 Fe 4.7 9.71 K 1.9 2.2 6.15 Li 4.7 2.3 8.55 Na 3.2 2.3 4.20 Ni 5.0 6.84 Zn 11.0 3 1028 4.3 5.91 Electronic Properties of Some Semiconductors Mobility Mobility of of Work Conductivity electrons holes function (photoelectric) Material 0 K 300 K  # 1  m e  V m  2 s h  V m  2 s  [eV] C (diamond) 5.48 5.47 1012 0.18 0.12 4.8 Ge 0.74 0.66 2.2 0.39 0.19 4.6 Element Si 1.17 1.12 9 104 0.15 0.045 3.6 Sn (gray) 0.08 106 0.14 0.12 4.4 GaAs 1.52 1.42 106 0.85 0.04 InAs 0.42 0.36 104 3.30 0.046 III–V InSb 0.23 0.17 8.00 0.125 GaP 2.34 2.26 0.01 0.007 IV–IV -SiC 3.03 2.99 0.04 0.005 ZnO 3.42 3.35 0.02 0.018 II–VI CdSe 1.85 1.70 0.08 Gap energy Eg [eV] Work function Resistivity