Am Ceramo97177-820199 Stacking Faults in B-SiC Formed during Carbothermal Reduction of SiO2 Won-Seon Seo and Kunihito Koumoto' ry, School of Engineering, Nagoya University, Nagoya, 464-01, Japan g powder sources are listed in B-SiC formation, twice as as added to the I-milling nixed powders hydrogen order to con- formation. The for 3 h in air to owder, and SEM rostructure onditions: scan- at33.6and41.4 tio was calculated es a higher density is smaller sity can be obtair ult density. High-resolution d area diffraction patterns were done at Figures(b), 3(a)and (b), 6, and 9 reveal that spherical rs in the synthesized tion (XRD)intens stacking fault fo articles existed mainly morphological dif een(a) the bottom and (b) the (1) Synthesis of B-Sic The B-SiC powder in the present work was synthesized by fomead oniy at the bot carbon source and SiO2, SiO, or Si powder as a silicon source. Table I. P Starting Pur Particle T.. Mitchell-contributing editor materials ity size(um) S 99.9 Sio 99.99 1 Received March 1. 1995: approved January 5. 1996. Sio 2 99. 0.8 c Research No.05780370 ithe Japanese Carbon black 99.5 0.04-0.1 Science and Culture. Graphite 99.9 5 , Amencan Ceramic society 1777