ROLE OF SURFACE ENERGY IN THE VAPOR-LIQUID-SOLID GROWTH OF SILICON 903 force acting on the droplet during Si whisker growth: 4. Tatarchenko, V.A., Ustoichivyi rost kristallov(Steady Fg=0.0467J/m State Crystal Growth), Moscow: Nauka, 1988 5. Shchetinin. A.A. Kozenkov o.D. and Nebol'sin. vA a Model for the Initial Stages of Silicon Whisker CONCLUSIONS Growth, lEv. vyssh. Uchebn. Zaved, Fiz., 1989, no. 1 pp.1l7-119 The main effects of inter facial energies on the fila- 6. Bataronov I L. Shchetinin, A.A. Dunaev,A L, and Kor- mentary growth of silicon in VLS systems are the low chagin, V.V., Axial Growth Rate of Silicon Whiskers in the reductio potential barrier to crystallization, owing to ring of the the Presence of Boron Tribromide, in Tonkie plenki i tion in the surface Gibbs energy of the liquid nitevidnye kristall(thin Films and Whiskers, Voron- phase and the equilibration of the liquid droplet on the ezh: Voronezh. Pedagogich Inst., 1993, pp 92-99 whisker tip. The droplet acts as a shaper, being responsi- 7. Voronkov, VV, On the Thermodynamic Equilibrium at ble for the circular cross section of the growing crystal a Three-Phase Line of Contact, Fiz. Tverd. Tela (lenin- grad),1963,vol.5,no.2,p.570-574 8. Naidich, Yu. V, Kontaktnmye yavleniya v metallicheskikh REFERENCES rasplavakh(Contact Phenomena in Metallic Melts), Kiev: Naukova Dumka, 1972 1. Maslov, V.N., yyrashchivanie profil'nmykh poluprovodni- kovykh monokristallov(Growth of Shaped Semiconduc- 9. Voronkov, V.V., Processes at the Solidification Interface, 2. Givargizov, E. 1, Rost nmitevidnykh i plastinchatykh hr- 10. Shchetinin, AA, Bubnov, L I, Tatarenkov, A.E., and Dolgachev, A A, Dinamika izmeneniya stallov i= para(Vapor Growth of Whiskers and Platelike kapel na monokristallicheskikh podlozhkakh(variation Crystals), Moscow: Nauka, 1977 in the Contact Angle of Droplets on Single-Crystal Sub- 3. Nebolsin, V.A., Shchetinin, A.A., and Natarova, E. strates), Available from VINITI, 1987, Moscow Variation in Silicon Whisker Radius during Unsteady no.3316V87 State Growth, Neorg. Mater, 1998, vol. 34, no. 2, 11. Stepanov, A.V., Growth of Shaped Crystals, lEv. Akad. pp 135-137 [Inorg. Mater:(Engl. Transl. ) vol. 34 Nauk SSSR, Ser: Fiz. 1969 vol. 33. no. 12 2,pp.87-89] pp.1946-1948 INORGANIC MATERIALS Vol 39 No 9 2003INORGANIC MATERIALS Vol. 39 No. 9 2003 ROLE OF SURFACE ENERGY IN THE VAPOR–LIQUID–SOLID GROWTH OF SILICON 903 force acting on the droplet during Si whisker growth: Fg = 0.0467 J/m2. CONCLUSIONS The main effects of interfacial energies on the fila￾mentary growth of silicon in VLS systems are the low￾ering of the potential barrier to crystallization, owing to the reduction in the surface Gibbs energy of the liquid phase, and the equilibration of the liquid droplet on the whisker tip. The droplet acts as a shaper, being responsi￾ble for the circular cross section of the growing crystal. REFERENCES 1. Maslov, V.N., Vyrashchivanie profil’nykh poluprovodni￾kovykh monokristallov (Growth of Shaped Semiconduc￾tor Crystals), Moscow: Metallurgiya, 1977. 2. Givargizov, E.I., Rost nitevidnykh i plastinchatykh kri￾stallov iz para (Vapor Growth of Whiskers and Platelike Crystals), Moscow: Nauka, 1977. 3. Nebol’sin, V.A., Shchetinin, A.A., and Natarova, E.I., Variation in Silicon Whisker Radius during Unsteady￾State Growth, Neorg. Mater., 1998, vol. 34, no. 2, pp. 135–137 [Inorg. Mater. (Engl. Transl.), vol. 34, no. 2, pp. 87–89]. 4. Tatarchenko, V.A., Ustoichivyi rost kristallov (Steady￾State Crystal Growth), Moscow: Nauka, 1988. 5. Shchetinin, A.A., Kozenkov, O.D., and Nebol’sin, V.A., A Model for the Initial Stages of Silicon Whisker Growth, Izv. Vyssh. Uchebn. Zaved., Fiz., 1989, no. 1, pp. 117–119. 6. Bataronov, I.L., Shchetinin, A.A., Dunaev, A.I., and Kor￾chagin, V.V., Axial Growth Rate of Silicon Whiskers in the Presence of Boron Tribromide, in Tonkie plenki i nitevidnye kristally (Thin Films and Whiskers), Voron￾ezh: Voronezh. Pedagogich. Inst., 1993, pp. 92–99. 7. Voronkov, V.V., On the Thermodynamic Equilibrium at a Three-Phase Line of Contact, Fiz. Tverd. Tela (Lenin￾grad), 1963, vol. 5, no. 2, pp. 570–574. 8. Naidich, Yu.V., Kontaktnye yavleniya v metallicheskikh rasplavakh (Contact Phenomena in Metallic Melts), Kiev: Naukova Dumka, 1972. 9. Voronkov, V.V., Processes at the Solidification Interface, Kristallografiya, 1974, vol. 19, no. 6, pp. 922–929. 10. Shchetinin, A.A., Bubnov, L.I., Tatarenkov, A.F., and Dolgachev, A.A., Dinamika izmeneniya kraevykh uglov kapel’ na monokristallicheskikh podlozhkakh (Variation in the Contact Angle of Droplets on Single-Crystal Sub￾strates), Available from VINITI, 1987, Moscow, no. 3316-V87. 11. Stepanov, A.V., Growth of Shaped Crystals, Izv. Akad. Nauk SSSR, Ser. Fiz., 1969, vol. 33, no. 12, pp. 1946−1948