Film growth rate =m*c- thick 4 7m for evaporation mAp、aA v k ource source /m 4m2n4m212o7 source Cf CvD HP/N k h d k In PVd growth, strike balance deposition rate R>1 stochastic growth, rough R Surface diffusion rate r< 1 layer by layer, smooth(can heat substrate) 6.152J3.155J6.152J/3.155J 11 vox = H pg N 1 h + tox D + 1 ks oxide In PVD growth, strike balance R = deposition rate Surface diffusion rate R > 1 stochastic growth, rough R < 1 layer by layer, smooth (can heat substrate) Film growth rate for evaporation = Jm Ac 4πr 2 1 ρ f thick t      v = pvap 2πmsourcekBTsource m ρ m Ac 4πr2 = pvap ρ m Ac 4πr2 msource 2πkBTsource Cf. CVD v f = Cg N 1 ng + 1 k