a typical gate drive circuit for IGBT based on an integrated driver chip 4 V 平42 Detection Fast recovery diode cIrcuit 1 Sensing t≤0.2 Timer and reset circuit A\ 30V 3.l92 M57962L +15V 100HR 太 Turn-off eRror indicating 100uR 6L 10V M57962L integrated driver chipPower Electron cs i 8 A typical gate drive circuit for IGBT based on A typical gate drive circuit for IGBT based on an integrated driver chip an integrated driver chip 13 Err o r in dicatin g Sensing VCC Interface circuit Turn-off circuit Ti mer an d reset circuit Detectio n circuit 4 1 5 8 6 14 13 uo VEE 8 1 5 4 6 -10 V +15 V 30 V +5 V M 57962 L 14 ui 1 Fast recovery diode t rr≤ 0. 2 µs 4.7kΩ 3.1Ω 100 µ F 100 µ F M57962L integrated driver chip M57962L integrated driver chip