Power electronics Supplement Practical Application Issues of Power Semiconductor Devices and d Gate Triggering Control Circuit for Thyristor Rectifiers
PPoowweerr EElleeccttrroonniiccss Supplement: Practical Application Issues of Power Semiconductor Devices and Gate Triggering Control Circuit for Thyristor Rectifiers
PERE Outline Practical application issues of power semiconductor devices e Gate drive circuit (Section 1.6 in the Chinese textbook) 4 Protection of power semiconductor devices (Section 1.7 in the Chinese textbook) 4 Series and parallel connections of power semiconductor devices (Section 1. 8 in the Chinese textbook) Gate triggering control circuit for thyristor rectifiers (Section 2. 9 in the Chinese textbook) 2
Power Electron cs i 2 Outline Outline Practical application issues of power semiconductor Practical application issues of power semiconductor devices devices Gate drive circuit Gate drive circuit (Section 1.6 in the Chinese textbook) (Section 1.6 in the Chinese textbook) Protection of power semiconductor devices Protection of power semiconductor devices (Section 1.7 in the Chinese textbook) (Section 1.7 in the Chinese textbook) Series and parallel connections of power Series and parallel connections of power semiconductor devices semiconductor devices (Section 1.8 in the Chinese textbook) (Section 1.8 in the Chinese textbook) Gate triggering control circuit for thyristor rectifiers Gate triggering control circuit for thyristor rectifiers (Section 2.9 in the Chinese textbook) (Section 2.9 in the Chinese textbook)
PERE 1.6 Gate drive circuit Basic function of gate drive circuit is to generate gate signals to turn-on or turn-off power semiconductor device according to the commanding signals from the control circuit Other functions of gate drive circuit: 4 Reduce switching time(including turn-on time and turn- off time 4 Reduce switching loss (including turn-on loss and turn off loss )and improve efficiency 4 Improve protection and safety of the converter Gate drive circuits provided by power semiconductor manufacturers and Integrated gate drive chips are more and more widely used 3
Power Electron cs i 3 1.6 Gate drive circuit Gate drive circuit Basic function of gate drive circuit: Basic function of gate drive circuit: is to generate gate signals to turn is to generate gate signals to turn -on or turn on or turn -off power off power semiconductor device according to the commanding semiconductor device according to the commanding signals from the control circuit. signals from the control circuit. Other functions of gate drive circuit: Other functions of gate drive circuit: Reduce switching time (including turn Reduce switching time (including turn -on time and turn on time and turn - off time) off time) Reduce switching loss (including turn Reduce switching loss (including turn -on loss and turn on loss and turn - off loss) and improve efficiency off loss) and improve efficiency Improve protection and safety of the converter Improve protection and safety of the converter Gate drive circuits provided by power semiconductor Gate drive circuits provided by power semiconductor manufacturers and Integrated gate drive chips are manufacturers and Integrated gate drive chips are more and more widely used. more and more widely used
PERE Electrical isolation in the gate drive circuit 4 Gate drive circuit usually provides the electrical isolation between control E circuit and power stage R R ◆ Two ways to provide electrical isolation transisto out Optical Optocoupler, fiber optics · Transformer Schematic of an optocoupler Magnetic
Power Electron cs i 4 Electrical isolation in the gate drive circuit Electrical isolation in the gate drive circuit Gate drive circuit usually Gate drive circuit usually provides the electrical provides the electrical isolation between control isolation between control circuit and power stage. circuit and power stage. Two ways to provide Two ways to provide electrical isolation electrical isolation – Optical Optical • Optocoupler Optocoupler, fiber optics , fiber optics • Transformer Transformer – Magnetic E R Uin Uout R1 IC ID LE D Phot o tra nsist or Schematic of an optocoupler Magnetic
PERE Thyristor gate current pulse requirments ◆ Shape of gate current pulse waveform Enhanced leading part Magnitude requirement (for the enhanced leading part and the other part) Width requirement(for the enhanced leading part and the whole pulse Power of the triggering Ideal gate current pulse signal must be within the waveform for thyristors SOA of the gate I-V characteristics 5
Power Electron cs i 5 Thyristor gate current pulse Thyristor gate current pulse requirments requirments Shape of gate current Shape of gate current pulse waveform: pulse waveform: – Enhanced leading part Enhanced leading part Magnitude requirement Magnitude requirement (for the enhanced leading (for the enhanced leading part and the other part) part and the other part) Width requirement (for the Width requirement (for the enhanced leading part and enhanced leading part and the whole pulse) the whole pulse) Power of the triggering Power of the triggering signal must be within the signal must be within the SOA of the gate I SOA of the gate I -V characteristics I t IM t 1 t 2 t 3 t 4 Ideal gate current pulse waveform for thyristors characteristics
PERE Typical thyristor gate triggering circuit +E +E, TM VD R R R Input from R control circuit
Power Electron cs i 6 Typical thyristor gate triggering circuit Typical thyristor gate triggering circuit TM R1 R 2 R 3 V1 V 2 VD1 VD3 VD 2 R 4 +E1 +E 2 Input from control circuit
PERE Typical gate signal and gate drive circuit for GTo l VD GTO VD V, L V 75my少y 50kHz CCV R N3 R 7
Power Electron cs i 7 Typical gate signal and gate drive circuit Typical gate signal and gate drive circuit for GTO for GTO O t t O u G i G 50kHz 50V GTO N1 N2 N3 C1 C3 C4 C2 R1 R2 R3 R4 V1 V3 V2 L VD1 VD2 VD3 VD4
a typical gate drive circuit for IGBT based on an integrated driver chip 4 V 平42 Detection Fast recovery diode cIrcuit 1 Sensing t≤0.2 Timer and reset circuit A\ 30V 3.l92 M57962L +15V 100HR 太 Turn-off eRror indicating 100uR 6L 10V M57962L integrated driver chip
Power Electron cs i 8 A typical gate drive circuit for IGBT based on A typical gate drive circuit for IGBT based on an integrated driver chip an integrated driver chip 13 Err o r in dicatin g Sensing VCC Interface circuit Turn-off circuit Ti mer an d reset circuit Detectio n circuit 4 1 5 8 6 14 13 uo VEE 8 1 5 4 6 -10 V +15 V 30 V +5 V M 57962 L 14 ui 1 Fast recovery diode t rr≤ 0. 2 µs 4.7kΩ 3.1Ω 100 µ F 100 µ F M57962L integrated driver chip M57962L integrated driver chip
PERE 1.7 Protection of power semiconductor devices Protection circuits 4 Overvoltage protection 4 Overcurrent protection Snubber circuits-specific protection circuits that can limit duldt or dildt 4 Turn-on snubber 4 Turn-off snubber
Power Electron cs i 9 1.7 Protection of power semiconductor Protection of power semiconductor devices devices Protection circuits Protection circuits Overvoltage Overvoltage protection protection Overcurrent Overcurrent protection protection Snubber Snubber circuits circuits —specific protection circuits that specific protection circuits that can limit du/ can limit du/dt or di /dt Turn -on snubber snubber Turn -off snubber snubber
causes of overvoltage on power semiconductor devices External reasons 4 Overvoltage caused by operation of mechanic withes 4 Overvoltage caused by thunder lightening Internal reasons 4 Overvoltage caused by the reverse recovery of diode or thyristor 4 Overvoltage caused by the turning-off of fully controlled devices
Power Electron cs i 10 Causes of Causes of overvoltage overvoltage on power on power semiconductor devices semiconductor devices External reasons External reasons Overvoltage Overvoltage caused by operation of mechanic caused by operation of mechanic swithes swithes Overvoltage Overvoltage caused by thunder lightening caused by thunder lightening Internal reasons Internal reasons Overvoltage Overvoltage caused by the reverse recovery of caused by the reverse recovery of diode or thyristor diode or thyristor Overvoltage Overvoltage caused by the turning caused by the turning -off of fully off of fully - controlled devices controlled devices
