Mc1496,Mc1496B Re=1.0k 39k39k 39k39k 1.0k Mc1496 Mc14966 50 -8.0 Vdc Figure 9. Common Mode gain Figure 10. Signal Gain and Output Swing TYPICAL CHARACTERISTICS Typical characteristics were obtained with circuit shown in Figure 5, fc 500 kHz(sine wave) Vc=60 mVrms, fs =1.0 kHz, Vs= 300 mVrms, TA= 25C, unless otherwise note 220 5u55 Signal Input= 600 mv 兰u2与z 0.8 300mV 0.4 彐50 50 Vc, CARRIER LEVEL(mVr f, FREQUENCY(MHz) Figure 12. Signal-Port Parallel-Equivalent Carrier Levels Input Resistance versus Frequency 5.0 ■■ ■■ suzoo2 □LLI ■I ■■ 10 f, FREQUENCY(MHz) Figure 13. Signal-Port Parallel-Equivalent Figure 14 Single-Ended Output Impedance versus FrequencyMC1496, MC1496B http://onsemi.com 6 +Vo 3 3.9 k VCC 12 Vdc 8 MC1496 2 Re = 1.0 k 1.0 k 0.5 V 1.0 k 50 + VS −Vo 10 1 6 4 14 5 12 6.8 k −8.0 Vdc VEE 3.9 k − ACM 20 log Vo VS Figure 9. Common Mode Gain Figure 10. Signal Gain and Output Swing V , OUTPUT AMPLITUDE OF EACH SIDEBAND (Vrms) O r , PARALLEL INPUT RESISTANCE (k ip Figure 11. Sideband Output versus Carrier Levels Figure 12. Signal−Port Parallel−Equivalent Input Resistance versus Frequency c , PARALLEL INPUT CAPACITANCE (pF) ip c , PARALLEL OUTPUT CAPACITANCE (pF) op Figure 13. Signal−Port Parallel−Equivalent Input Capacitance versus Frequency Figure 14. Single−Ended Output Impedance versus Frequency TYPICAL CHARACTERISTICS Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave), VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25°C, unless otherwise noted. I5 = 1.0 mA +Vo 3 3.9 k VCC 12 Vdc 2 Re = 1.0 k −Vo 6 14 5 12 6.8 k −8.0 Vdc VEE 3.9 k 0.5 V + − 1.0 k 1.0 k VS 50 1.0 2.0 0 140 −rip +rip 14 12 10 8.0 6.0 4.0 0 10 100 120 0 10 1.0 20 5.0 100 40 50 1.0 1.0 f, FREQUENCY (MHz) 80 200 2.0 5.0 10 100 100 500 1.0 M 60 50 2.0 10 100 3.0 2.0 1.0 0 5.0 400 mV Signal Input = 600 mV 4.0 VC, CARRIER LEVEL (mVrms) 1.6 0 0.8 0 0.4 1.2 50 150 100 5.0 100 mV 200 mV 300 mV 20 50 f, FREQUENCY (MHz) f, FREQUENCY (MHz) MC1496 8 10 1 4 rop Ω) r , PARALLEL OUTPUT RESISTANCE (k op Ω) cop