5SHX26L4503 GCT Data On-state(see Fig. 1) lTAVMMax. average on-state current 855 A Half sine wave, Tc=85C ITRMsMax. RMs on-state current 1345A 18.kaTp 10msT=115c Max peak non-repetitive surge current After surge 33.6 katp 1 ms VD=VR=OV p?t Limiting load integral 178x10°A3st= 10 ms 0.56×10°A2stb= 1 ms On-state voltage 3V 2200A V Threshold voltage Slope resistance 06mo=400-300A15°c 1.65V Turn-on switching di/dt:Max rate of rise of on-state current 650 A/us h 500Hz=115°C 2200AV=3200V Turn-on delay time ttt 2700yT=115c Rise time 2200 a di/dt=550A/μs Min, on-time 10 us Rs 0.639L urn-on energy per pulse≤085J|ca=4证L 06山H Turn-off switching(see Fig. 2, 11, 12) VM≤V 115%C ITGQMMax. controllable turn-off current 2200A T 2700VL 0.6pH ITGOM2 Max controllable turn-off current 1100A DM S VDRM千=115°c 3200VLcL≤ 06H doff Turn-off delay time ≤ 6 Hs VD 2700V VDM S VDRM Fall time 115°CRs 063g ff( min)Minoff-time GQM 4.9pH Eoff Turn-off energy per pulse 8.7J CCL= 4 uF L 0.6l ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 2 of 95SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 2 of 9 GCT Data On-state (see Fig. 1) ITAVM Max. average on-state current 855 A Half sine wave, TC = 85 °C ITRMS Max. RMS on-state current 1345 A 18.8 kA tp = 10 ms ITSM Max. peak non-repetitive surge current 33.6 kA tp = 1 ms Tj = 115 °C After surge: VD = VR = 0V 1.78x106 A2 s tp = 10 ms I 2 t Limiting load integral 0.56x106 A2 s tp = 1 ms VT On-state voltage ≤ 3V IT = 2200 A VT0 Threshold voltage 1.65 V rT Slope resistance 0.6 mΩ IT = 400 - 3000 A Tj = 115 °C Turn-on switching f = 500 Hz Tj = 115 °C di/dtcrit Max. rate of rise of on-state current 650 A/µs IT = 2200 A VD = 3200 V tdon Turn-on delay time ≤ 3 µs VD = 2700 V Tj = 115 °C tr Rise time ≤ 1 µs IT = 2200 A di/dt = 550 A/µs ton (min) Min, on-time 10 µs RS = 0.63 Ω Li = 4.9 µH Eon Turn-on energy per pulse ≤ 0.85 J CCL = 4 µF LCL = 0.6 µH Turn-off switching (see Fig. 2, 11, 12) VDM ≤ VDRM Tj = 115 °C ITGQM Max. controllable turn-off current 2200 A VD = 2700 V LCL ≤ 0.6 µH VDM ≤ VDRM Tj = 115 °C ITGQM2 Max. controllable turn-off current 1100 A VD = 3200 V LCL ≤ 0.6 µH tdoff Turn-off delay time ≤ 6 µs VD = 2700 V VDM ≤ VDRM tf Fall time ≤ 1 µs Tj = 115 °C Rs = 0.63 Ω toff (min) Min. off-time 10 µs ITGQ = ITGQM Li = 4.9 µH Eoff Turn-off energy per pulse ≤ 8.7 J CCL = 4 µF LCL ≤ 0.6 µH