DRM 4500 Reverse Conducting Integrated TGQM 2200A Gate-Commutated thyristor TSM 18.8KA 1.65V 5SHX26L4503 0.6 mQ VpClink 2800 V DoC. No. 5SYA1230-01 Feb. 02 Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity Cosmic radiation withstand rating Blocking Repetitive peak off-state voltage 4500VVaR≥2V DRM Repetitive peak off-state current s 50 mA VD =VDRM vea≥2V V Permanent DC voltage for 100 DClink FIT failure rate 2800V/o≤T≤115°c. Ambient cosmic radiation at sea level in open air Mechanical data (see Fig 9) mIn 42 kN Mounting force 46 KN D Pole-piece diameter 85 mm ±0.1mm H Housing thickness 26 mm 0.5mm Weight IGCT 3.5kg D Surface creepage distance 33 mm Air strike distance ≥ 13 mm Length IGCT 451mm+0/-05mm Height IGCT 40 mm ±1.0mm Width IGCT 213mm+0/0.5mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice ABR
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VDRM = 4500 V ITGQM = 2200 A ITSM = 18.8 kA VT0 = 1.65 V rT = 0.6 mΩ VDClink = 2800 V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4503 Doc. No. 5SYA1230-01 Feb. 02 • Direct fiber optic controll and status • Fast response (tdon < 3 µs, tdoff < 6 µs) • Precise timing • Patented free-floating silicon technology • High reliability • Very high EMI immunity • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 4500 V VGR ≥ 2V IDRM Repetitive peak off-state current ≤ 50 mA VD = VDRM VGR ≥ 2V VDClink Permanent DC voltage for 100 FIT failure rate 2800 V 0 ≤ Tj ≤ 115 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 9) min. 42 kN Fm Mounting force max. 46 kN Dp Pole-piece diameter 85 mm ±0.1 mm H Housing thickness 26 mm ±0.5 mm m Weight IGCT 3.5 kg Ds Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 13 mm l Length IGCT 451 mm +0/-0.5 mm h Height IGCT 40 mm ±1.0 mm w Width IGCT 213 mm +0/-0.5 mm
5SHX26L4503 GCT Data On-state(see Fig. 1) lTAVMMax. average on-state current 855 A Half sine wave, Tc=85C ITRMsMax. RMs on-state current 1345A 18.kaTp 10msT=115c Max peak non-repetitive surge current After surge 33.6 katp 1 ms VD=VR=OV p?t Limiting load integral 178x10°A3st= 10 ms 0.56×10°A2stb= 1 ms On-state voltage 3V 2200A V Threshold voltage Slope resistance 06mo=400-300A15°c 1.65V Turn-on switching di/dt:Max rate of rise of on-state current 650 A/us h 500Hz=115°C 2200AV=3200V Turn-on delay time ttt 2700yT=115c Rise time 2200 a di/dt=550A/μs Min, on-time 10 us Rs 0.639L urn-on energy per pulse≤085J|ca=4证L 06山H Turn-off switching(see Fig. 2, 11, 12) VM≤V 115%C ITGQMMax. controllable turn-off current 2200A T 2700VL 0.6pH ITGOM2 Max controllable turn-off current 1100A DM S VDRM千=115°c 3200VLcL≤ 06H doff Turn-off delay time ≤ 6 Hs VD 2700V VDM S VDRM Fall time 115°CRs 063g ff( min)Minoff-time GQM 4.9pH Eoff Turn-off energy per pulse 8.7J CCL= 4 uF L 0.6l ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 2 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 2 of 9 GCT Data On-state (see Fig. 1) ITAVM Max. average on-state current 855 A Half sine wave, TC = 85 °C ITRMS Max. RMS on-state current 1345 A 18.8 kA tp = 10 ms ITSM Max. peak non-repetitive surge current 33.6 kA tp = 1 ms Tj = 115 °C After surge: VD = VR = 0V 1.78x106 A2 s tp = 10 ms I 2 t Limiting load integral 0.56x106 A2 s tp = 1 ms VT On-state voltage ≤ 3V IT = 2200 A VT0 Threshold voltage 1.65 V rT Slope resistance 0.6 mΩ IT = 400 - 3000 A Tj = 115 °C Turn-on switching f = 500 Hz Tj = 115 °C di/dtcrit Max. rate of rise of on-state current 650 A/µs IT = 2200 A VD = 3200 V tdon Turn-on delay time ≤ 3 µs VD = 2700 V Tj = 115 °C tr Rise time ≤ 1 µs IT = 2200 A di/dt = 550 A/µs ton (min) Min, on-time 10 µs RS = 0.63 Ω Li = 4.9 µH Eon Turn-on energy per pulse ≤ 0.85 J CCL = 4 µF LCL = 0.6 µH Turn-off switching (see Fig. 2, 11, 12) VDM ≤ VDRM Tj = 115 °C ITGQM Max. controllable turn-off current 2200 A VD = 2700 V LCL ≤ 0.6 µH VDM ≤ VDRM Tj = 115 °C ITGQM2 Max. controllable turn-off current 1100 A VD = 3200 V LCL ≤ 0.6 µH tdoff Turn-off delay time ≤ 6 µs VD = 2700 V VDM ≤ VDRM tf Fall time ≤ 1 µs Tj = 115 °C Rs = 0.63 Ω toff (min) Min. off-time 10 µs ITGQ = ITGQM Li = 4.9 µH Eoff Turn-off energy per pulse ≤ 8.7 J CCL = 4 µF LCL ≤ 0.6 µH
5SHX26L4503 Diode data On-state(see Fig 4) lFAVM Max average on-state current 315A Half sine wave, Tc=85C IFRMsMax. RMs on-state current 500A Max peak non-repetitive surg 16.katp 10 ms current 42.8KAt= 1 ms After surge 144×10°A2 10 ms V= VR=OV p?t Limiting load integral 0.91×105A2stb= 1 ms JOn-state voltage 7.05V lF 2200A Threshold voltage 3.08V lF=400-3000A Slope resistance 18mg2 Turn-off switching(see Fig. 5, 6, 11, 12) di/dt Max rate of rise of on-state 2200A千 115%C current 650 Aps VcL 3200V Reverse recovery current ≤900Av 2700VlF=2200A E Turn-off energy ≤4 u di/dt=550AusT=115°C 0.63 4.9pH 4 uF LCL 06H Gate Unit Power supply (see Fig 9 to 11) Without galvanic isolation to power V Gate Unit voltage 20±0.5Voc circuit PGin Gate Unit power consumption< 54W fs=500Hz,leA=915A,=0.9 Gate Unit power connector AMP 640389-4 MTA Friction Lock Header, right angle( Note 1) Optical control input/output Note 3(see Fig 9, 10, 11) Poncs Optical input power -21 dBm Optical noise power 45 dBm Valid for 1mm plastic optical fibre tical output powe -15 dBm ( POF) Poff sF Optical noise power < -50 dBm gLITCh Pulse width threshold 500 ns Max pulse width without response Receiver for command signal Agilent, Type HFBR-2528 sF Transmitter for status feedback Agilent, Type HFBR-1528 Note 2 Note1:Amp,www.amp.com Note2:AgilentTechnologieswww.semiconductor.agilent.com Note 3: Do not disconnect or connect fiber optic cables while light is on ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 3 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 3 of 9 Diode Data On-state (see Fig. 4) IFAVM Max. average on-state current 315 A IFRMS Max. RMS on-state current 500 A Half sine wave, TC = 85 °C 16.9 kA tp = 10 ms Tj = 115 °C IFSM Max. peak non-repetitive surge current 42.8 kA tp = 1 ms After surge: 1.44×106 A2 s tp = 10 ms VF = VR = 0V I 2 t Limiting load integral 0.91×106 A2 s tp = 1 ms VF On-state voltage ≤ 7.05 V IF = 2200 A VF0 Threshold voltage 3.08 V Tj = 115 °C rF Slope resistance 1.8 mΩ IF = 400 - 3000 A Turn-off switching (see Fig. 5, 6, 11, 12) IF = 2200 A Tj = 115 °C di/dtcrit Max. rate of rise of on-state current 650 A/µs VCL = 3200 V Irr Reverse recovery current ≤ 900 A VCL = 2700 V IF = 2200 A Err Turn-off energy ≤ 4 J di/dt = 550 A/µs Tj = 115 °C Rs = 0.63 Ω Li = 4.9 µH CCL = 4 µF LCL = 0.6 µH Gate Unit Power supply (see Fig. 9 to 11) VGDC Gate Unit voltage 20 ±0.5 VDC Without galvanic isolation to power circuit. PGin Gate Unit power consumption ≤ 54 W fS = 500 Hz, ITGQ AV = 915 A, δ = 0.9 X1 Gate Unit power connector AMP 640389-4 MTA Friction Lock Header, right angle (Note 1) Optical control input/output Note 3 (see Fig. 9, 10, 11) Pon CS Optical input power > -21 dBm Poff CS Optical noise power -15 dBm Poff SF Optical noise power < -50 dBm Valid for 1mm plastic optical fibre (POF) tGLITCH Pulse width threshold ≤ 500 ns Max. pulse width without response CS Receiver for command signal Agilent, Type HFBR-2528 Note 2 SF Transmitter for status feedback Agilent, Type HFBR-1528 Note 2 Note 1: AMP, www.amp.com Note 2: Agilent Technologies, www.semiconductor.agilent.com Note 3: Do not disconnect or connect fiber optic cables while light is on
5SHX26L4503 Thermal TTT Operating junction temperature range Storage temperature range Ambient operational temperature range CCC Thermal resistance junction to case RthC GCt Diode not dissipating 12 K/kW Double side cooled Rthic Diode GCT not dissipating 23 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating 6 K/kW Double side cooled RthCH Diode IGCT not dissipating 6 K/kW ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 4 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 4 of 9 Thermal Tjop Operating junction temperature range 0…115 °C Tstg Storage temperature range -40…60 °C Tamb Ambient operational temperature range 0…50 °C Thermal resistance junction to case RthJC GCT Diode not dissipating ≤ 12 K/kW Double side cooled RthJC Diode GCT not dissipating ≤ 23 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating ≤ 6 K/kW Double side cooled RthCH Diode GCT not dissipating ≤ 6 K/kW
5SHX26L4503 GCT Part =115c Vn=2700V 2500 Fig. 1 GCT on-state characteristics Fig. 2 GCT turn-off energy per pulse vs turn -off current 3001=0.11c VoM s V 20a40F R=063日 2009日十 1000 1000 2000 4000 3 Max repetitive GCT turn-off current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 5 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 5 of 9 GCT Part 1.5 2.0 2.5 3.0 3.5 4.0 VT [V] 0 500 1000 1500 2000 2500 3000 3500 IT [A] Tj = 115°C 0 500 1000 1500 2000 2500 0 1 2 3 4 5 6 7 8 9 I TGQ [A] Tj = 115°C VD = 2700 V Eoff [J] Fig. 1 GCT on-state characteristics. Fig. 2 GCT turn-off energy per pulse vs. turn-off current. 0 500 1000 1500 2000 2500 3000 3500 0 1000 2000 3000 4000 VD [V] ITGQ [A] Tj = 0..115 °C VDM ≤ VDRM Li = 4.9 µH CCL = 4.0 µF LCL = 0.6 µH Rs = 0.63 Ω Fig. 3 Max. repetitive GCT turn-off current
5SHX26L4503 Diode part lF [A Irr [A] 3500 950日d=50As 3000 Vn=2700V 750 500H ■■■■■■■■ VEM Fig 4 Diode on-state characteristics Fig 5 Diode reverse recovery current Vs turn -off current Err [J] la四A 3500 40日=50As 日v。=2700V 3000 3.5 dip/dt=550 A/us H+ 2500 HVoMs VI 2000 ■■■■■■■■■■■■■■■■■ ■■■■■■■■ 5001000150020002500 2000 30004000 Vo M Fig 6 Diode turn-off energy per pulse vs Fig. 7 Max repetitive diode forward turn -off current current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 6 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 6 of 9 Diode Part 3456789 VF [V] 0 500 1000 1500 2000 2500 3000 3500 I F [A] Tj = 115°C 0 500 1000 1500 2000 2500 500 550 600 650 700 750 800 850 900 950 1000 Tj = 115°C diF/dt = 550 A/µs VD = 2700 V I FQ [A] Irr [A] Fig. 4 Diode on-state characteristics. Fig. 5 Diode reverse recovery current vs. turn-off current. 0 500 1000 1500 2000 2500 I FQ [A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Err [J] Tj = 115°C diF/dt = 550 A/µs VD = 2700 V 0 1000 2000 3000 4000 VD [V] 0 500 1000 1500 2000 2500 3000 3500 I FQ [A] Tj = 0 - 115°C diF/dt = 550 A/µs VDM ≤ VDRM Fig. 6 Diode turn-off energy per pulse vs. turn-off current. Fig. 7 Max. repetitive diode forward current
5SHX26L4503 =1000H 00自-=250H duty cycle 8=0.9 200 80 IGo [A] Fig 8 Gate Unit power consumption 0 8 Device Outline Drawing ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 7 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 7 of 9 0 200 400 600 800 I TGQ [A] 0 10 20 30 40 50 60 70 80 90 100 110 120 PGin [W] duty cycle δ = 0.9 f s = 1000 Hz f s = 750 Hz f s = 250 Hz Fig. 8 Gate Unit power consumption. 7 . 4 5 2 1 3 1 5 0 225 451 226 2 2. 5° 2 7 4 0 Ø134 Ø122 Ø120 16 x M3x12 (F-Schr.) + + - - 1 SF CS X1 Fig. 9 Device Outline Drawing
5sHX26L4503 RC-IGCT Gate Unit RC-GCT Supply(20V ntemal Supply (without galvanic isolation to power circuit) Anode Circuit Command Signal ( Light) Cathode Fig 10 Block diagram ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. DOc. No. 5SYA1230-01 Feb 02 page 8 of 9
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1230-01 Feb. 02 page 8 of 9 RC-IGCT Logic Monitoring TurnOff Circuit TurnOn Circuit Gate Cathode Internal Supply (without galvanic isolation to power circuit) Supply (20VDC X ) 1 CS Rx Command Signal (Light) Anode Gate Unit RC-GCT Fig. 10 Block diagram
5SHX26L4503 Turn-on Turn-off didt 0.9V 0.8l 0.05V Fig 11 General current and voltage waveforms with IGCT-specific symbols DUT R v LC DUT Diode-part Fig 12 Test circuit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABR ABB Switzerland Ltd DC. No. 5SYA1230-01 Feb 02 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone+41(0585861419 +41(0)585861306 Emailabbsem@ch.abb.com Internetwww.abbsem.com
5SHX 26L4503 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Doc. No. 5SYA1230-01 Feb. 02 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com 1 CS CS I T VDSP VDM VD 0.3 ITGQ 0.8 ITGQ 0.05 VD VG t don t f t r t doff I T I TM di/dt 0.9 VD 0.1 VD VD Turn-on Turn-off VG Fig. 11 General current and voltage waveforms with IGCT-specific symbols. LCL Li Rs DUT GCT - part LLoad DUT Diode - part CCL VLC Fig. 12 Test circuit
