西安交通大学：《电力电子变电技术》DCR1473SY/DCR1473SV

@ENEx DCR1473SY/DCR1473SV Phase control thyristor ces November 2002 version. DS4652-51 DS4652-60 October 2003 PACKAGE OUTLINE KEY PARAMETERS 4135A 64000A dvd 1000v/μus dI/dt 500A/μs Higher dv/dt selections available Outline type code: Y Outline type code: V See Package Details for further information Fig. 1 Package outline VOLTAGE RATINGS Part Number Repetitive Peak Voltages Conditions DCR1473SY =0°to125°C. =250mA. DCR1473SV1 1200 Vn. Vow= 10ms 1/2 sine V_.&V_+100V respectively Lower voltage grades available ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table DCR1473SY12 for a 1200V'Y' outline variant DCR1473SV12 for a 1200V'V' outline variant If a lower voltage grade is required, then use VoRN/100 for the DCR1473SY10 for a 1000V Y' outline variant etc this number in any future correspondance relating to your order ote Note: Please use the complete part number when ordering and qu www.dynexsemi.com

DCR1473SY / DCR1473SV 1/9 www.dynexsemi.com Replaces November 2002 version, DS4652-5.1 DS4652-6.0 October 2003 DCR1473SY / DCR1473SV Phase Control Thyristor KEY PARAMETERS VDRM 1200V I T(AV) 4135A I TSM 64000A dVdt* 1000V/µs dI/dt 500A/µs *Higher dV/dt selections available ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table. For example: DCR1473SY12 for a 1200V 'Y' outline variant or DCR1473SV12 for a 1200V 'V' outline variant If a lower voltage grade is required, then use VDRM/100 for the grade required e.g.: DCR1473SY10 for a 1000V 'Y' outline variant etc. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. VOLTAGE RATINGS DCR1473SY12 or DCR1473SV12 Conditions Tvj = 0˚ to 125˚C. I DRM = IRRM = 250mA. VDRM, VRRM = 10ms 1/2 sine. VDSM & VRSM = VDRM & VRRM + 100V respectively. Lower voltage grades available. Part Number Repetitive Peak Voltages VDRM VRRM V 1200 1200 PACKAGE OUTLINE See Package Details for further information. Fig. 1 Package outline Outline type code: Y Outline type code: V

DCR1473SYDCR1473SV @ ENEx CURRENT RATING 60C unless stated otherwise Symbol Parameter Conditions Max Units Double side Cooled Mean on-state current Half wave resistive load 4135A RMS value 6495 Continuous(direct)on-state current 5700 Single Side Cooled(Anode side) Mean on-state current Half wave resistive load RMS value 4090 AAA Continuous(direct) on-state current 3290 CURRENT RATING T=80C unless stated otherwise Symbo Parameter Conditions Max. Units Double side cooled Mean on-state current Half wave resistive load RMS value 5010 AAA Continuous(direct)on-state current 3950 Single Side Cooled(Anode side) Mean on-state current Half wave resistive load 1966 RMS value 3090 AAA Continuous(direct)on-state current 2410 /w.dynexsemi col

DCR1473SY / DCR1473SV 2/9 www.dynexsemi.com Symbol Parameter Conditions Double Side Cooled I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Single Side Cooled (Anode side) I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Max. Units Half wave resistive load 3190 A - 5010 A - 3950 A Half wave resistive load 1966 A - 3090 A - 2410 A Symbol Parameter Conditions Double Side Cooled I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Single Side Cooled (Anode side) I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Max. Units Half wave resistive load 4135 A - 6495 A - 5700 A Half wave resistive load 2605 A - 4090 A - 3290 A CURRENT RATING Tcase = 80˚C unless stated otherwise. CURRENT RATING Tcase = 60˚C unless stated otherwise

@ ENEx DCR1473SYDCR1473sV SURGE RATINGS Symbol Parameter Conditions Max. Uni Surge(non-repetitive)on-state current 10ms half sine: T.= 125C 51.0 ?t It for fusing V=50%V-1/4 sine 131x106A2s Surge(non-repetitive)on-state current 10ms half sine: T 64.0 KA Pt Pt for fusing V=0 2048×10°A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Min. Max. Unit Double side cooled 00095°W Thermal resistance- junction to case Anode dc 0.019°W Single side cooled Cathode dc Double sid Thermal resistance. case to heatsink Clamping force 43.0kN 0002 with mounting compound Single side On-state(conducting) 1359C T Virtual junction temperature Reverse(blocking) 125 Storage temperature range 55125°c Clamping force 380470kN www.dynexsemi.com

DCR1473SY / DCR1473SV 3/9 www.dynexsemi.com SURGE RATINGS Conditions 10ms half sine; Tcase = 125o C VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125o C VR = 0 Symbol Parameter Max. Units I TSM Surge (non-repetitive) on-state current I 2 t I2 t for fusing I TSM Surge (non-repetitive) on-state current I 2 t I 2 t for fusing 20.48 x 106 A2 s 64.0 kA 13.1x 106 A2 s 51.0 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units o Anode dc - 0.019 C/W Clamping force 43.0kN with mounting compound R Thermal resistance - case to heatsink th(c-h) Double side - 0.002 125 o C Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side - R Thermal resistance - junction to case th(j-c) Single side cooled Symbol Parameter Clamping force 38.0 47.0 kN -55 125 o C - On-state (conducting) - 135 o C - 0.004 o C/W o C/W Cathode dc - - o C/W Double side cooled - 0.0095 o C/W

DCR1473SYDCR1473SV @ENEx DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Max. Units IRRM/rM Peak reverse and off-state current At VaBNvpgy, Tease 125C mA dV/dt Maximum linear rate of rise of off-state voltage To 67%VaM T=125.C, gate open circuit 1000V/us From 67%V. to Repetitive 50Hz 250As dI/dt Rate of rise of on-state current t=05μsto1AT Non-repetitive 500Aus V Threshold voltage AtT=125°C 0.824V On-state slope resistance AtT=1259 0.066mg Delay time V.=67%V Gate source 30V 15Q t=05us,T=25°c GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditi Max.Units Gate trigger voltage V=5V.T=25° 4.0 lgr Gate trigger current DRM =5V, Tase=25C Gate non-trigger voltage AtV.T=125℃ 025V Peak forward gate voltage Anode positive with respect to cathode Peak forward gate voltage Anode negative with respect to cathode VRoM Peak reverse gate voltage Peak forward gate current Anode positive with respect to cathode Peak gate power See Gate Characteristics curve/table Mean gate power 10W /w.dynexsemi col

DCR1473SY / DCR1473SV 4/9 www.dynexsemi.com DYNAMIC CHARACTERISTICS Symbol Conditions Parameter I RRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125o C From 67% VDRM to 1000A Gate source 20V, 10Ω t r = 0.5µs to 1A, Tj = 125o C dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125o C, gate open circuit Max. Units 250 mA 1000 V/µs Repetitive 50Hz 250 A/µs Non-repetitive 500 A/µs dI/dt Rate of rise of on-state current VT(TO) Threshold voltage At Tvj = 125o C r T On-state slope resistance At Tvj = 125o C t gd Delay time 0.824 V 0.066 mΩ 2.0 µs VD = 67% VDRM, Gate source 30V, 15Ω t r = 0.5µs, Tj = 25o C GATE TRIGGER CHARACTERISTICS AND RATINGS VDRM = 5V, Tcase = 25o C Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25o C I GT Gate trigger current VGD Gate non-trigger voltage At VDRM Tcase = 125o C VFGM Peak forward gate voltage Anode positive with respect to cathode VFGN Peak forward gate voltage Anode negative with respect to cathode VRGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode PG(PK) Peak gate power See Gate Characteristics curve/table PG(AV) Mean gate power 4.0 V 400 mA 0.25 V 30 V 0.25 V 5 V 30 A 150 W 10 W Max. Units

@ ENEx DCR1473SY/DCR1473sV CURVES 10000 Measured u 田 4000 3 phase 8000 T;=125℃ 6000 598 钿锺日 1000 2000 3000 4000 nstantaneous on-state voltageⅥr·(V) Mean on-state current, IT(AV)-(A) Fig 2 Maximum(limit)on-state characteristics ig. 3 Power dissipation curves Table gives pulse power PG(PK in Watts Pulse width 10 =25℃ 125°C 0.001 0.1 10 Gate trigger current IGT-(A) Fig. 4 Gate characteristics www.dynexsemi.com

DCR1473SY / DCR1473SV 5/9 www.dynexsemi.com 0 1000 2000 3000 4000 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Mean power dissipation - (W) dc 1/2 wave 3 phase 6 phase CURVES Fig. 2 Maximum (limit) on-state characteristics Fig. 3 Power dissipation curves Fig. 4 Gate characteristics 0.5 1.0 1.5 Instantaneous on-state voltage VT - (V) 0 2000 4000 6000 8000 10000 Instantaneous on-state current IT - (A) Measured under pulse conditions Tj = 25˚C Tj = 125˚C 0.001 0.01 0.1 1 10 Gate trigger current IGT - (A) 100 10 1 0.1 Gate trigger voltage VGT - (V) 100W 50W 20W 10W 5W 2W Tj = 125˚C Tj = -40˚C Tj = 25˚C Upper limit 99% VFGM IFGM Lower limit 1% Pulse width µs 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - Pulse frequency Hz Table gives pulse power PG(PK) in Watts

CR1473SYDCR1473sV @ ENEx 0.1000 □■口 □ Single side cooled 止 Double side cooled □ 000 Effective Thermal Resistance d Conduction Junction to case-C/ Double Sided Sided □■口 □ d.c 0.0095 0.019 0.0105 0.0200 3 phase 120 0.0112 6 phase 60°00139 0.000 0001 001 Time-(s Fig 5 Maximum(limit transient thermal impedance-junction to case r=: 100 120 址0写 □■■■ 234510203050 Cycles at 50Hz Fig 6 Surge(non-repetitive)on-state current vs time with 50%Voom at T= 125c) /w.dynexsemi col

DCR1473SY / DCR1473SV 6/9 www.dynexsemi.com Fig. 5 Maximum (limit) transient thermal impedance - junction to case Fig. 6 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 0.001 0.01 0.1 1.0 10 100 Time - (s) 0.1000 0.0100 0.0010 0.0001 Thermal impedance - (˚C/W) Single side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective Thermal Resistance Junction to case - ˚C/W Double Sided 0.0095 0.0105 0.0112 0.0139 Single Sided 0.0190 0.0200 0.0207 0.0234 80 60 40 20 0 Peak half sine wave on-state current - (kA) 1 10 1 2 3 4 5 50 ms Cycles at 50Hz Duration 0 4.0 I2t value - (A2s x 106) I2t I2t = Î2 x t 2 10.0 100 10 20 30 2.0 6.0 8.0 14.0 12.0 120

@ ENEx DCR1473SYDCR1473sV PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE 2 holes 3.6 x 2.0 deep (In both electrodes) Catho 01125ma N 073 nom 01.5 G 073 nom Nominal weight: 1100g Clamping force: 50kN +10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig 7 Package details www.dynexsemi.com

DCR1473SY / DCR1473SV 7/9 www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Ø73 nom Cathode Gate Anode27.0 25.4 Cathode tab Ø73 nom Ø112.5 max Ø1.5 Nominal weight: 1100g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.7 Package details

DCR1473SYDCR1473SV @ ENEx PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes 03.6 x 2.0 deep. ( In both electrodes) Cathode 01125max 073'nom Gat 073 nom Anode Clamping fo t:1100 force:50kN±10% ngth: 420mm Lead terminal connector: M4 ring Package outline type code: V /w.dynexsemi col

DCR1473SY / DCR1473SV 8/9 www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Ø73 nom Cathode Gate Anode27.0 25.4 Cathode tab Ø73 nom Ø112.5 max Ø1.5 Nominal weight: 1100g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.8 Package details

(ENEx POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling(with flow rates)is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer services http://www.dynexsemi.com e-mail:power_solutions@dynexsemi.com CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Te:+44(0)1522502753/502901.Fax:+44(0)1522500020 Doddington Road, Lincoln Lincolnshire. LN6 3LF. United Kingdom SALES OFFICES Te:+44-(0)1522-500500 Benelux, Italy Switzerland: Tel: +33(0)1 64 66 42 17. Fax: +33(0)164 6642 19. Fax:+44-(0)1522500550 France:Te:+33(0)247557553.Fax:+33(0)247557559 any, Northern Europe, Spain& Rest Of World: Tel: +44(0)1522 502753/502901 Fax:+44(0)1522500020 North America:Tel:(440)259-2060.Fax:(440)259-2059.Te:(949)7333005.Fax:(949)7332986 These office @ Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION-N RESALE. PRODUCED IN UNITED KINGDOM 签三 or death to he user. All products and materals are sold and services provided subject to the Company' s conditions of sale, which are available on request. A brand names and product used in this publication are trademarks, registered trademarks or trade names of their respective owners. dynexsemico

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com