VDRM E 2500 V Gate turn-off Thyristor ITGOM E 3000 A 30 KA v =1.50V 5SGA30J2501 =0.33ms Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500VVeR≥2V VRRM Repetitive peak reverse voltage 17V IDRM Repetitive peak off-state current< 100 mA VD=VDRM VeP≥2V IRRM Repetitive peak reverse current< 50 mA VR=VE RGK= Permanent DC voltage for 100 1400V-40≤T≤125°. Ambient cosmic FIT failure rate radiation at sea level in open air Mechanical data (see Fig 4) Mounting force max 44 kN A Acceleration Device unclamped 50m/s2 Device clamped 200m/s2 M Weight 1.3 kg Surface creepage distance ≥33mm D Air strike distance ≥15mm ABB Semiconductors AG reserves the right to change specifications without notice. ABR
ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V ITGQM = 3000 A ITSM = 30 kA VT0 = 1.50 V rT = 0.33 mΩ VDClin = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500 V VGR ≥ 2V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 100 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 FIT failure rate 1400 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 4) Fm min. 36 kN Mounting force max. 44 kN A Acceleration: Device unclamped Device clamped 50 200 m/s2 m/s2 M Weight 1.3 kg DS Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 15 mm
5sGA30J2501 GTO Data On-state Max average on-state current 1300A Half sine wave, Tc =85C ITRMs Max RMs on-state current 2040A ITSMMax. peak non-repetitive 30 ka tp 10msT=125℃c surge current 51 katp 1 ms After surge 1?t Limiting load integral 45010°A2st= 10 ms VD=VR=OV 1.30106A2stp On-state voltage 2.50V 3000A To Threshold voltage 1.50V r=400-4000AT=125° Slope resistance 0.33mg Holding current 100A T=25°C Gate Gate trigger voltage 1.2V 24VT;=25°C Gate trigger current 4.0A RA =0.1 Q2 VGRM Repetitive peak reverse voltage17V GRM Repetitive peak reverse current 50 mA V Turn-on switching di/dterit Max. rate of rise of on-state 500Apsf=200z=3000A,T= current 1000 A/us f=1Hz GM=30 A, dig/dt=20 A/us Delay time 2.5μs 0.5VRMT=125°C Rise time 5.0ys =3000 a di/dt=300Aμs ton(min)Min on-time 100 Hs IGM= 30a dig/dt= 20 A/us Turn-on energy per pulse 2.00 Ws C 5 uF Rs 5Ω Turn-off switching Max controllable turn -off 3000A VoM= VDRM digo/dt 40 Aus current 5 HF ≤0.3uH Storage time 250μsV= DRM Fall time 3.0 Aus tot Min off-time 100 us ITGQ = ITGOM Eoff Turn-off energy per pulse 4.7 WsCs 5μFR 5Q Peak turn - off gate current 1000A Ls≤0.3pH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000 page 2 of 6
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 2 of 6 GTO Data On-state ITAVM Max. average on-state current 1300 A Half sine wave, TC = 85 °C ITRMS Max. RMS on-state current 2040 A ITSM 30 kA tP = 10 ms Tj Max. peak non-repetitive = 125°C surge current 51 kA tP = 1 ms After surge: I 2 t Limiting load integral 4.50⋅106 A2 s tP = 10 ms VD = VR = 0V 1.30⋅106 A2 s tP = 1 ms VT On-state voltage 2.50 V IT = 3000 A VT0 Threshold voltage 1.50 V IT = 400 - 4000 A Tj = 125 °C rT Slope resistance 0.33 mΩ IH Holding current 100 A Tj = 25 °C Gate VGT Gate trigger voltage 1.2 V VD = 24 V Tj = 25 °C IGT Gate trigger current 4.0 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VGR = VGRM Turn-on switching di/dtcrit Max. rate of rise of on-state 500 A/µs f = 200Hz IT = 3000 A, Tj = 125 °C current 1000 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs td Delay time 2.5 µs VD = 0.5 VDRM Tj = 125 °C tr Rise time 5.0 µs IT = 3000 A di/dt = 300 A/µs ton(min) Min. on-time 100 µs IGM = 30 A diG/dt = 20 A/µs Eon Turn-on energy per pulse 2.00 Ws CS = 5 µF RS = 5 Ω Turn-off switching ITGQM Max controllable turn-off 3000 A VDM = VDRM diGQ/dt = 40 A/µs current CS = 5 µF LS ≤ 0.3 µH ts Storage time 25.0 µs VD = ½ VDRM VDM = VDRM tf Fall time 3.0 µs Tj = 125 °C diGQ/dt = 40 A/µs toff(min) Min. off-time 100 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 4.7 Ws CS = 5 µF RS = 5 Ω IGQM Peak turn-off gate current 1000 A LS ≤ 0.3 µH
5sGA30J2501 hermal Storage and operating 40.125°C junction temperature range Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled Rthch Thermal resistance case to 3K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal pedance 4 Zthjc(t ∑ R(1-e t/ ti RI(K/kW)5.4 4.5 1.7 0.4 )120.1700101 ZtJc(K/kW) 642o t(s) Fig. 1 Transient thermal impedance, junction to case ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 3 of 6 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled RthCH Thermal resistance case to 3 K/kW Single side cooled heat sink 3 K/kW Double side cooled i 12 3 4 RI (K/kW) 5.4 4.5 1.7 0.4 Analytical function for transient thermal impedance: Z (t) = R (1 - e ) 4 i 1 -t / thJC ∑ i = τi τi (s) 1.2 0.17 0.01 0.001 Fig. 1 Transient thermal impedance, junction to case
5sGA30J2501 G"C Max 125cM Fig 2 On-state characteristics ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 4 of 6 Fig. 2 On-state characteristics
5sGA30J2501 Anode dild 0.9h 0.9v 01V 0.25 TX Gate dig/dt GM 0.1l VG (t) dico/dt Fig 3 General current and voltage waveforms with GTO-specific symbols cant conoco D3n mm(ANG 12)l center Fig 4 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000 page 5 of 6
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 5 of 6 Fig. 3 General current and voltage waveforms with GTO-specific symbols Fig. 4 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise
5sGA30J2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode the gto reverse voltage ve may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTo is then driven into reverse avalanche. This condition is not dangerous for the GTo provided avalanche time and current are below 10 us and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation: VGR=10.15 V ABB Semiconductors AG reserves the right to change specifications without notice. ABB ABB Semiconductors AG Doc. No. 5SYA 1213-02 Aug. 2000 Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland +41(0)628886419 +41(0)628886306 E-mail info@ch.abb.com Internet w. abbsem. com
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Doc. No. 5SYA 1213-02 Aug. 2000 Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: +41 (0)62 888 6419 Fax: +41 (0)62 888 6306 E-mail info@ch.abb.com Internet www.abbsem.com Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V
