TOSHBA IGBT (Discrete Strobe flash Dec,2003 TOSHIBA Semiconductor Company Discrete semiconductor division 2003 Dec DPO54001101 122
1/22 2003 Dec DP0540011_01 IGBT (Discrete) Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division Strobe Flash
TOSHBA Summary of Discrete for Strobe flasher Diode IGBT Compact 0 Compact& Hi-Power Hi- performance 0 Low Gate Drive US/S-FLAT & M-FLAT Normal one: VGE=SV Released lp=150A one New Device: VGE=3.3V with M-FLat Strobe 0 Compact Slim lasher TSSOP-8 available Thyristor Focused smaller one 0 Guaranteed High Ic 00)0 Icp=150A(TSSOP-8 package) Developing NSM() Icp=200A (SOP-8 package SCR for Xe Lamp Trigger 2003 Dec DPO54001101 2/22
2/22 2003 Dec DP0540011_01 Diode IGBT Summary of Discrete for Strobe Flasher Compact & Hi-performance Strobe Flasher Low Gate Drive Normal one : VGE=5V New Device : VGE=3.3V Compact & Slim TSSOP-8 available Focused smaller one Guaranteed High Ic Icp=150A(TSSOP-8 package) Icp=200A (SOP-8 package) Compact & Hi-Power US/S-FLAT & M-FLAT Released Ip=150A one with M-FLAT Compact Developing NSM(*) SCR for Xe Lamp Trigger Thyristor
TOSHBA Discrete devices in strobe flasher D/D Conv Diode CRF02 U02Z300N series 11 TSCR Voltage reference for Trigger Battery CMC01 IGBT GTGG133 Regulator GT10G131 rigger signal iPN+ PNP Transistor Controller Amplifier IGBT Drive N-ch+P-ch MOSfet New devices 2003 Dec DPO54001101 3/22
3/22 2003 Dec DP0540011_01 Discrete devices in Strobe Flasher NPN + PNP Transistor or IGBT Drive N-ch + P-ch MOSFET Trigger Signal SCR for Trigger Controller Amplifier D/D Conv. Diode Battery Diode IGBT Voltage Reference Circuit Regulator Xe Lump CRF02 U02Z300N series CMC01 GTGG133 GT10G131 New devices
TOSHBA Discrete line up example for Strobe Flasher circuit Packa ati Maior Characteristic 2SC5766 13A/10V hFE=70010200 2SC5738 hFE=4001100 2SA2061 -2.5A-20V ISSM3KOIT 32A0V 1120mw a4V DC/DC ConY SSM3JOIT 17A-30V 400mwa-\ SOT-892SC5713 4A/10v hFE=40010100 PW-MIND2SA2059 13420V hFE=200 to 500 VS-6 TPC6001 6A20 30mWa4V TPC6101 ■4.5420V60mwa4V with rgkelk ohms Trigger SOT-89URSFO5G49-1P0.5A/400V Diode for Main Circuit I-FLAT UIGC44S IFRM130A IM-FLAT CMCO1 J1A/400V JIFRM=150A Diode SMQ 1SS399 IS-FLAT CRGO2 7A400V Zener Diode DO-411ZB100 to 390100 to 390V/W Thru hole package I-FLAT UIZB100 to 390 100 to 390V/W SMD LDO TAR5S33 33V200mA Vout1.5 to 5.0V with ON/OFF function SMV TAR5S50 0V/200mA T10G131 2004400V VGE=4V Min, drive voltage Flasher SOP-8 GT8G132 504400V GT5G131 304400V VGE=3V Min drive voltage TSSOP-8 GT8G133 150A/400V VGE=4V Min, drive voltage SM6LOSFU +0.4/-02A/20V N-ch+P-ch 2in1 IGBT Driver portion SM6 HNIB04F 0.5A±30V NPN+PNP,2inl USM SC4666 150mA50V hFE=600t03600 2003 Dec DPO54001101 422
4/22 2003 Dec DP0540011_01 Discrete Line up Example for Strobe Flasher Circuit Block Package P/N Ratings Major Characteristic 2SC5766 3A/10V hFE=700 to 2000 2SC5738 3.5A/20V hFE=400 to 1000 2SA2061 -2.5A/-20V hFE=200 to 500 SSM3K01T 3.2A/30V 120mW @4V SSM3J01T -1.7A/-30V 400mW @-4V SOT-89 2SC5713 4A/10V hFE=400 to 1000 (PW-MINI) 2SA2059 -3A/-20V hFE=200 to 500 TPC6001 6A/20V 30mW @4V TPC6101 -4.5A/-20V 60mW @-4V SOT-89 URSF05G49-1P 0.5A/400V with RGK=1k ohms I-FLAT U1GC44S 1A/400V IFRM=130A M-FLAT CMC01 1A/400V IFRM=150A SMQ 1SS399 0.1A/400V 2n1 S-FLAT CRG02 0.7A/400V SMD DO-41 1ZB100 to 390 100 to 390V/1W Thru hole package I-FLAT U1ZB100 to 390 100 to 390V/1W SMD TAR5S33 3.3V/200mA Vout=1.5 to 5.0V with ON/OFF function TAR5S50 5.0V/200mA GT10G131 200A/400V VGE=4V Min. drive voltage GT8G132 150A/400V VGE=4V Min. drive voltage GT5G131 130A/400V VGE=3V Min. drive voltage TSSOP-8 GT8G133 150A/400V VGE=4V Min. drive voltage US6 SSM6L05FU +0.4/-0.2A/±20V N-ｃｈ+P-ｃｈ, 2in1 SM6 HN1B04F ±0.5A/±30V NPN+PNP, 2in1 USM 2SC4666 150mA/50V hFE=600 to 3600 Diode for Main Circuit SOP-8 Flasher IGBT Driver Portion Diode SMV Zener Diode LDO VS-6 DC/DC Conv. Trigger TSM
TOSHBA IGBT Line up for Strobe flasher 0 Have been developed thinner compact package 0 Lower gate drive characteristic in latest design rule than previous one Thinner& Compact Package TO-220FL/SM SOP-8 TSSOP-8 30A50A70A200A130A|D50A|70A200A[L3A50A70A200413A50A170A200A G01 GT25 G102 12\ GT5G 102 GT5G 103 GT8G GT8G 131 4.0V GT8G 132 3.0V 31 2003 Dec DPO54001101 5/22
5/22 2003 Dec DP0540011_01 IGBT Line up for Strobe Flasher Have been developed thinner & compact package Lower gate drive characteristic in latest design rule than previous one Thinner & Compact Package Design Rule & Gate Drive VoltageIcp 130A 150A 170A 200A 130A 150A 170A 200A 130A 150A 170A 200A 130A 150A 170A 200A 20V GT25 G101 GT25 G102 GT5G 102 GT5G 103 GT8G 103 4th GT8G 121 GT8G 131 GT8G 132 GT10 G131 GT8G 133 3.0V GT5G 131 VGE TO-220FL / SM DP TSSOP-8 4.0V 5th SOP-8 2nd 12V 3rd 4.5V Gen
TOSHBA The Change of IGBT Package for Strobe Flasher (Unit in-- -m)- T0-220 Class DP SOP-8 TSSOP-8 10.3 MAX Changed to compact package 44 T0-220SM 5.5MAX 10.3 MAX nootno 8 2.5 MAX T0-220FL 2003 Dec DPO54001101 6/22
6/22 2003 Dec DP0540011_01 Thru-Hole Type SMD Type (Unit in : mm) DP The Change of IGBT Package for Strobe Flasher TO-220 Class SOP-8 TSSOP-8 Changed to Compact Package TO-220FL TO-220SM 2.5 10.3 MAX 10.6 MAX 10.3 MAX 10.6 MAX 6.8 MAX 5.5 2.5 MAX 4.4 ±0.2 6.0 ±0.3 5.5MAX. 1.5 ±0.2 3.0 6.4 4.4 0.85 ±0.05
TOSHBA GT5G131 5th Generation with Vr=3.3V 11 Development Concept *** Available for 3. 3v Gate Supply **x 1)Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule 2) Guarantee of maximum Icp=l30a by optimized trench gate design 3)Protection of Gate insulation layer by Zener diode between gate emitter 2/ Low Gate Drive voltage& Space merit I)Low Gate Drive Voltage( Logic Level) Available Icp=130A Control at VGE=3.0V drive New 2)Thinner SMD Package: SOP-8 Package Product Height 1.5+0.2mm: 1.0mm Benefit than DP package 3)Improvement of ESd capability between Gate emitter 13 Schedule Under Mass-producing 2003 Dec DPO54001101 722
7/22 2003 Dec DP0540011_01 [ 1 ] Development Concept *** Available for 3.3V Gate Supply *** 1) Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule 2) Guarantee of Maximum Icp=130A by optimized trench gate design 3) Protection of Gate insulation layer by Zener Diode between gate & emitter [ 2 ] Low Gate Drive Voltage & Space Merit 1) Low Gate Drive Voltage ( Logic Level ) Available Icp=130A Control at VGE=3.0V Drive 2) Thinner SMD Package : SOP-8 Package Height 1.5±0.2mm : 1.0mm Benefit than DP package 3) Improvement of ESD capability between Gate & Emitter [ 3 ] Schedule Under Mass-producing GT5G131 5th Generation with VGE=3.3V New Product New Product
TOSHBA GT8G132 5 h generation with Icp=150A 11 Development Concept *** New Icp=150A**X 1)Available 4.0V Gate Drive New 2)Compact Package: Foot Print Area-Just 50x60mm Product Height --1.6mm 3)High Gate Drivability due to Low Gate Charge and others by latest design rule 4) Protection of Gate insulation layer by Zener diode between gate emitter 2/ Schedule Under mass production 13/ The comparison between 5th GT8G132& 4th GT8G131( the detail is shown in page 12M13 Generation 4th Type Name GT8G132 G8G131 (I)Input Capacitance at VCE=lOV, fIMHz 2800pF 3800pF (2)VCE(sat at VGE=4V, IC=150A) 2.3V 30V at VGE=4V, IC=150A t=1.0 t=1.5 ()Swiching Speed RG51Q2) tfl.us All parameters are described by typical value 2003 Dec DPO54001101 8/22
8/22 2003 Dec DP0540011_01 [ 1 ] Development Concept *** New Icp=150A *** 1) Available 4.0V Gate Drive 2) Compact Package : Foot Print Area – Just 5.0×6.0mm Height -- 1.6mm 3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule 4) Protection of Gate insulation layer by Zener Diode between gate & emitter [ 2 ] Schedule Under Mass Production [ 3 ] The Comparison between 5th GT8G132 & 4th GT8G131 ( the detail is shown in page 12 ∼13 ) GT8G132 5th generation with Icp=150A New Product New Product 5th 4th GT8G132 Gt8G131 (1) Input Capacitance ( at VCE=10V, f=1MHz) 2800pF 3800pF (2) VCE(sat) ( at VGE=4V, IC=150A) 2.3V 3.0V ( at VGE=4V, IC=150A, tr=1.0µs tr=1.5µs RG=51Ω ) tf=1.6µs tf=1.9µs Generation Type Name All parameters are described by typical value. (3) Suiching Speed
TOSHBA GT5G131: Typical Characteristic(1) Ic-VcE Characteristic(@VGE=3V lc-Ⅴ Characteristic 200 GT5G131 「 GT5G131 GT8G131 b120 GT8G131 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) 2003 Dec DPO54001101 9/22
9/22 2003 Dec DP0540011_01 GT5G131 : Typical Characteristic (1) 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector Current Ic (A) 0 40 80 120 160 200 GT8G131 GT5G131 Ic – VCE Characteristic (@VGE=3V Ic – VGE Characteristic 0 1 2 3 4 5 Gate to Emitter Voltage VGE (V) Collector Current Ic (A) 0 40 80 120 160 200 GT8G131 GT5G131 240 280
TOSHBA GT5G131: Typical Characteristic(2) Limit value of collector current Tc=25C Tc=70C Test Condition 200 200 VCC=300V 190 190 180 GE- 170 RG=309 Tc=25,70°C 150 VCC=300V 140 30g z l10 10 0 (pcs) The samples shown distribution data as the above are used normal one 2003 Dec DPO54001101 10/22
10/22 2003 Dec DP0540011_01 GT5G131 : Typical Characteristic (2) Limit Value of Collector Current Tc=25C 0 2 4 6 8 10 100 110 120 130 140 150 160 170 180 190 200 CP I (A) (pcs) Tc=70C 0 2 4 6 8 10 100 110 120 130 140 150 160 170 180 190 200 ICP (A) (pcs) Test Conditions ・VCC=300V ・VGE=3V ・RG=30Ω ・Tc=25，70℃ 0 3V 30Ω VCC=300V The samples shown distribution data as the above are used normal one
