DRM 5500v Reverse Conducting Integrated TGQM 900A Gate-Commutated thyristor TSM 7.5kA 1.65V 5SHX10H6004 2 mQ VpClink 3300 V e Direct fiber optic control Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating Blocking Repetitive peak off-state voltage 5500VⅣa≥2V DRM Repetitive peak off-state current s 20 mA VD =VDRM vea≥2V V Permanent DC voltage for 100 DClink FIT failure rate 3300V/o≤T≤115° C. Ambient cosmic radiation at sea level in open air Mechanical data (see Fig 9) mIn 18 KN Mounting force 22 KN D Pole-piece diameter 63 mm ±0.1mm H Housing thickness 26 mm 0.5mm Weight IGCT 1.7kg D Surface creepage distance 33 mm Air strike distance ≥ 13 mm Length IGCT 239mm+0/-05mm Height IGCT 62.5mm ±1.0mm Width IGCT 200mm+0/0.5mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice ABR
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VDRM = 5500 V ITGQM = 900 A ITSM = 7.5 kA VT0 = 1.65 V rT = 2 mΩ VDClink = 3300 V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response (tdon < 3 µs, tdoff < 6 µs) • Precise timing (∆tdoff < 800 ns) • Patented free floating silicon technology • Optimized low on-state and switching losses • Very high EMI immunity • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 5500 V VGR ≥ 2V IDRM Repetitive peak off-state current ≤ 20 mA VD = VDRM VGR ≥ 2V VDClink Permanent DC voltage for 100 FIT failure rate 3300 V 0 ≤ Tj ≤ 115 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 9) min. 18 kN Fm Mounting force max. 22 kN Dp Pole-piece diameter 63 mm ±0.1 mm H Housing thickness 26 mm ±0.5 mm m Weight IGCT 1.7 kg Ds Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 13 mm l Length IGCT 239 mm +0/-0.5 mm h Height IGCT 62.5 mm ±1.0 mm w Width IGCT 200 mm +0/-0.5 mm
5sHX10H6004 GCT Data On-state(see Fig. 1) lTAVM Max average on-state current 355a Half sine wave, T=85C ITRMsMax. RMs on-state current 555A 7.5kA 10msT=115c Max peak non-repetitive surge current 15 kA After surge 1 ms VD=VR=OV 10 ms p?t Limiting load integral 286×10A2st= 112X103A2st= 1 ms On-state voltage 3.45V 900A V Threshold volt 2mo=200-200A/=115℃ 1.65V Slope resistance Turn-on switching di/dt:Max rate of rise of on-state current 340A f=500Hz=115°C 900AVb=3900V Turn-on delay time ttt 3300yT=115c Rise time 900 a didt=290A/μs Min, on-time 10 us Rs 1.25 Q2 Li 11.5山H Eon Turn-on energy per pulse 0.5J L 06山H Turn-off switching(see Fig. 2, 3) VM≤V T 115%C ITGQMMax. controllable turn-off current 900A 3300VLcu≤ 0.6pH ITGOM2 Max controllable turn-off current 460A VDRM=115°C 3900VLc≤ 06H doff Turn-off delay time ≤ 6 Hs VD 3300V VDM S VDRM Fall time 115°CR3=125g ff( min)Minoff-time GQM 115μH Eoff Turn-off energy per pulse 4.8J CCL= 2 HF LCL≤0.6μ ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 2 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 2 of 9 GCT Data On-state (see Fig. 1) ITAVM Max. average on-state current 355 A Half sine wave, TC = 85 °C ITRMS Max. RMS on-state current 555 A 7.5 kA tp = 10 ms ITSM Max. peak non-repetitive surge current 15 kA tp = 1 ms Tj = 115 °C After surge: VD = VR = 0V 286x103 A2 s tp = 10 ms I 2 t Limiting load integral 112x103 A2 s tp = 1 ms VT On-state voltage ≤ 3.45 V IT = 900 A VT0 Threshold voltage 1.65 V rT Slope resistance 2 mΩ IT = 200 - 2000 A Tj = 115 °C Turn-on switching f = 500 Hz Tj = 115 °C di/dtcrit Max. rate of rise of on-state current 340 A/µs IT = 900 A VD = 3900 V tdon Turn-on delay time ≤ 3 µs VD = 3300 V Tj = 115 °C tr Rise time ≤ 1 µs IT = 900 A di/dt = 290 A/µs ton (min) Min, on-time 10 µs RS = 1.25 Ω Li = 11.5 µH Eon Turn-on energy per pulse ≤ 0.5 J CCL = 2 µF LCL = 0.6 µH Turn-off switching (see Fig. 2, 3) VDM ≤ VDRM Tj = 115 °C ITGQM Max. controllable turn-off current 900 A VD = 3300 V LCL ≤ 0.6 µH VDM ≤ VDRM Tj = 115 °C ITGQM2 Max. controllable turn-off current 460 A VD = 3900 V LCL ≤ 0.6 µH tdoff Turn-off delay time ≤ 6 µs VD = 3300 V VDM ≤ VDRM tf Fall time ≤ 1 µs Tj = 115 °C Rs = 1.25 Ω toff (min) Min. off-time 10 µs ITGQ = ITGQM Li = 11.5 µH Eoff Turn-off energy per pulse ≤ 4.8 J CCL = 2 µF LCL ≤ 0.6 µH
5sHX10H6004 Diode data On-state(see Fig 4) lFAVM Max average on-state current 165A Half sine wave, Tc=85C IFRMsMax. RMs on-state current 260A Max peak non-repetitive surg 7.6kA 10 ms current 17.5 tp 1 ms After surge 10 ms V= VR=OV p?t Limiting load integral 288×103As|t= 153×103A23stb= 1 ms JOn-state voltage 64V lF 900A Threshold voltage 2.53V lF=200-2000A Slope resistance 4.3 mQ Turn-off switching(see Fig. 5, 6) di/dt Max rate of rise of on-state 340 A/uS 900A千 115%C current 3900V Reverse recovery current ≤430Av 3300V IF 900A E Turn-off energy ≤26 u di/dt=290AusT=115°c 115H 2μFLc=0.6pH Gate Unit Power supply (see Fig 9 to 11) Without galvanic isolation to power V Gate Unit voltage 20±0.5Voc circuit PGin Gate Unit power consumption 26W fs=500Hz,lroA=375A,8=0.9 Gate Unit power connector WAGO, Part Number 231-532/001-000 Optical control input/output Note s (see Fig. 9 to 11) Poncs Optical input power -20 dBm Valid for 1mm plastic optical fibre Optical noise power 45 dBm ( POF gLITCh Pulse width threshold 500 ns Max pulse width without response cs Receiver for command signal Agilent, Type HFBR-2528 Note 2 Note1:Wago,www.wago.com Note2:AgilentTechnologieswww.semiconductor.agilent.com Note 3: Do not disconnect or connect fiber optic cables while light is on ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 3 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 3 of 9 Diode Data On-state (see Fig. 4) IFAVM Max. average on-state current 165 A IFRMS Max. RMS on-state current 260 A Half sine wave, TC = 85 °C 7.6 kA tp = 10 ms Tj = 115 °C IFSM Max. peak non-repetitive surge current 17.5 kA tp = 1 ms After surge: 288×103 A2 s tp = 10 ms VF = VR = 0V I 2 t Limiting load integral 153×103 A2 s tp = 1 ms VF On-state voltage ≤ 6.4 V IF = 900 A VF0 Threshold voltage 2.53 V Tj = 115 °C rF Slope resistance 4.3 mΩ IF = 200 - 2000 A Turn-off switching (see Fig. 5, 6) IF = 900 A Tj = 115 °C di/dtcrit Max. rate of rise of on-state current 340 A/µs VCL = 3900 V Irr Reverse recovery current ≤ 430 A VCL = 3300 V IF = 900 A Err Turn-off energy ≤ 2.6 J di/dt = 290 A/µs Tj = 115 °C Rs = 1.25 Ω Li = 11.5 µH CCL = 2 µF LCL = 0.6 µH Gate Unit Power supply (see Fig. 9 to 11) VGDC Gate Unit voltage 20 ±0.5 VDC Without galvanic isolation to power circuit. PGin Gate Unit power consumption ≤ 26 W fS = 500 Hz, ITGQ AV = 375 A, δ = 0.9 X1 Gate Unit power connector WAGO, Part Number 231-532/001-000 Note 1 Optical control input/output Note 3 (see Fig. 9 to 11) Pon CS Optical input power > -20 dBm Poff CS Optical noise power < -45 dBm Valid for 1mm plastic optical fibre (POF) tGLITCH Pulse width threshold ≤ 500 ns Max. pulse width without response CS Receiver for command signal Agilent, Type HFBR-2528 Note 2 Note 1: WAGO, www.wago.com Note 2: Agilent Technologies, www.semiconductor.agilent.com Note 3: Do not disconnect or connect fiber optic cables while light is on
5sHX10H6004 Thermal TTT Operating junction temperature range Storage temperature range Ambient operational temperature range a CCC Thermal resistance junction to case RthC GCt Diode not dissipating 25 K/kW Double side cooled Rthic Diode GCT not dissipating 42 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating 8 K/kW Double side cooled RthCH Diode IGCT not dissipating 8 K/kW ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 4 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 4 of 9 Thermal Tjop Operating junction temperature range 0…115 °C Tstg Storage temperature range -40…60 °C Tamb Ambient operational temperature range 0…60 °C Thermal resistance junction to case RthJC GCT Diode not dissipating ≤ 25 K/kW Double side cooled RthJC Diode GCT not dissipating ≤ 42 K/kW Thermal resistance case to heatsink RthCH GCT Diode not dissipating ≤ 8 K/kW Double side cooled RthCH Diode GCT not dissipating ≤ 8 K/kW
5sHX10H6004 GCT Part Eoft [] T=11 2.0 1.0 0100200300400500600700800900 g GCT on-state characteristics g GCT turn-off energy per pulse vs turn-off current 11.5μH R=125 2000 300040005000 Vo M Max repetitive gCt turn-off current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 5 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 5 of 9 GCT Part 0 200 400 600 800 1000 1.5 2.0 2.5 3.0 3.5 4.0 VT [V] IT [A] Tj = 115°C 0 100 200 300 400 500 600 700 800 900 1000 I TGQ [A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Eoff [J] Tj = 115°C VD = 3300 V Fig. 1 GCT on-state characteristics. Fig. 2 GCT turn-off energy per pulse vs. turn-off current. 0 100 200 300 400 500 600 700 800 900 1000 0 1000 2000 3000 4000 5000 VD [V] ITGQ [A] Tj = 0..115 °C VDM ≤ VDRM Li = 11.5 µH CCL = 2.0 µF LCL = 0.6 µH Rs = 1.25 Ω Fig. 3 Max. repetitive GCT turn-off current
5sHX10H6004 Diode part l圆 Err [jj diF/dt= 290 A/us 450=30y 2.0 1.0 HHHHH 0100200300400500600700800900100 01002003004005006007008009001000 Fig 4 Diode reverse recovery current Fig 5 Diode turn-off energy per pulse Vs turn -off current turn -off current lPa四A 1000 T=115°c 圃铺辅 日T=0-116c 800日adt=290Aus日 20003000 40005000 VE MV Fig 6 Diode on-state characteristics Max repetitive diode forward current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 6 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 6 of 9 Diode Part 0 100 200 300 400 500 600 700 800 900 1000 I FQ [A] 200 250 300 350 400 450 500 I rr [A] Tj = 115°C diF/dt = 290 A/µs VD = 3300 V 0 100 200 300 400 500 600 700 800 900 1000 I FQ [A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Err [J] Tj = 115°C diF/dt = 290 A/µs VD = 3300 V Fig. 4 Diode reverse recovery current vs. turn-off current. Fig. 5 Diode turn-off energy per pulse vs. turn-off current. 0 200 400 600 800 1000 3.0 4.0 5.0 6.0 7.0 VF [V] IF [A] Tj = 115°C 0 1000 2000 3000 4000 5000 VD [V] 0 100 200 300 400 500 600 700 800 900 1000 I FQ [A] Tj = 0 - 115°C diF/dt = 290 A/µs VDM ≤ VDRM Fig. 6 Diode on-state characteristics. Fig. 7 Max. repetitive diode forward current
5sHX10H6004 50卫 fs 500 Hz fs 50 Hz 050100150200250300350400 GO ave [A] Fig 8 Gate Unit power consumption 少51+5(x8 holes for heatsink assemblyl 2 center holes φ3.6x2 § Device Outline Drawing ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 7 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 7 of 9 0 50 100 150 200 250 300 350 400 I TGQ ave [A] 0 5 10 15 20 25 30 35 40 45 50 PGin [W] fs = 1000 Hz fs = 500 Hz fs = 50 Hz Fig. 8 Gate Unit power consumption. Fig. 9 Device Outline Drawing
5sHX10H6004 RC-IGCT Gate Unit RC-GCT Supply(20V ntemal Supply (without galvanic isolation to power circuit) Anode Circuit Command Signal ( Light) Cathode Fig 10 Block diagram ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan 02 page 8 of 9
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1226-03 Jan. 02 page 8 of 9 RC-IGCT Logic Monitoring TurnOff Circuit TurnOn Circuit Gate Cathode Internal Supply (without galvanic isolation to power circuit) Supply (20VDC X ) 1 CS Rx Command Signal (Light) Anode Gate Unit RC-GCT Fig. 10 Block diagram
5sHX10H6004 Turn-on Turn-off didt 0.9V 0.8l 0.05V Fig 11 General current and voltage waveforms with IGCT-specific symbols DUT R v LC DUT Diode-part Fig 12 Test circuit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABR ABB Switzerland Ltd DoC. No. 5SYA1226-03 Jan 02 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone+41(0585861419 +41(0)585861306 Emailabbsem@ch.abb.com Internetwww.abbsem.com
5SHX 10H6004 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Doc. No. 5SYA1226-03 Jan. 02 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com 1 CS CS I T VDSP VDM VD 0.3 ITGQ 0.8 ITGQ 0.05 VD VG t don t f t r t doff I T I TM di/dt 0.9 VD 0.1 VD VD Turn-on Turn-off VG Fig. 11 General current and voltage waveforms with IGCT-specific symbols. LCL Li Rs DUT GCT - part LLoad DUT Diode - part CCL VLC Fig. 12 Test circuit