的凇YNeX DK13FW SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency v 800v Fully Characterised For Operation Up To 20kHz. 110A T(RMS) 1200A APPLICATIONS dVd 200Vlus High Power Inverters And Choppers ddt200A/μs ■ AC Motor drives. tq 10us Induction Heating VOLTAGE RATINGS Type Number Repetitive Peak Conditions Voltages DK13 08FW K or M V=V+100V DK13 06FWK or M =|=15mA at V or v.&T Outline type code: To94 See Package l ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table, then Add K to type number for 1/2"20 UNF thread, e.g. DK1306FWK Add M to type number for M12 thread, e.g. DK13 06FM Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to 1/13 www.dynexsemi.com
1/13 www.dynexsemi.com DK13..FW FEATURES ■ Low Switching Losses At High Frequency. ■ Fully Characterised For Operation Up To 20kHz. APPLICATIONS ■ High Power Inverters And Choppers. ■ UPS. ■ AC Motor Drives. ■ Induction Heating. ■ Cycloconverters. VOLTAGE RATINGS ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, then:- Add K to type number for 1/2" 20 UNF thread, e.g. DK13 06FWK or Add M to type number for M12 thread, e.g. DK13 06FM. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. KEY PARAMETERS VDRM 800V I T(RMS) 110A I TSM 1200A dVdt 200V/µs dI/dt 200A/µs t q 10µs DK13..FW Fast Switching Thyristor Replaces July 2001 version, DS4267-4.0 DS4267-4.1 July 2002 Outline type code: TO94 See Package Details for further information. Fig. 1 Package outline DK13 08FW K or M DK13 06FW K or M Conditions VRSM = VRRM + 100V I DRM = IRRM = 15mA at VRRM or VDRM & Tvj Type Number Repetitive Peak Voltages VDRM VRRM V 800 600
DK13FW 果NX SEMICONDUCTOR CURRENT RATINGS Symbol Parameter Conditions Max. Units Mean on-state current Half wave resistive load, T =80%C A RMS RMS value Tas=80°C 110 SURGE RATINGS Symbo Parameter Conditions Units Surge(non-repetitive)on-state current t=10ms half sine; Tcase=125C 12 t It for fusing V =0%Vn-1/4 sine 7.2x103A2 THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Min. Max. Units Thermal resistance- junction to case 024c Thermal resistance- case to heatsink Mounting torque 15.0Nm 008 with mounting compound On-state(conducting) 125 °C TyVirtual junction temperature Reverse(blocking) Storage tem mperature range Mounting torque 12015.0Nm MEASUREMENT OF RECOVERED CHARGE-Q Measurement of QRAt: ORA =IRR X tRR 5x 2/13 www.dynexsemi.com
2/13 www.dynexsemi.com DK13..FW SURGE RATINGS Conditions t p = 10ms half sine; Tcase = 125o C VR = 0% VRRM - 1/4 sine Symbol Parameter Max. Units I TSM Surge (non-repetitive) on-state current I 2 t I2 t for fusing 7.2 x 103 A2s 1.2 kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Min. Max. Units - 0.24 o Rth(j-c) Thermal resistance - junction to case C/W Mounting torque 15.0Nm with mounting compound - 0.08 o Rth(c-h) Thermal resistance - case to heatsink C/W 125 o C Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) - Mounting torque 12.0 15.0 Nm -40 150 o C - On-state (conducting) - 125 o C dc CURRENT RATINGS Symbol Parameter Conditions Max. Units I T(AV) Mean on-state current I T(RMS) RMS value Half wave resistive load, Tcase = 80o C 70 A Tcase = 80o C 110 A MEASUREMENT OF RECOVERED CHARGE - QRA1 0.5x IRR I RR QRA1 t p = 1ms ITM dIR/dt Measurement of QRA1 : QRA1 = IRR x tRR 2
米YcX DK13F SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol Parameter Conditions in. Max. Units aximum on-state voltage At300 A peak,T=25°C 235V RR/oRM Peak reverse and off-state current At VRR/VoRM, Tease=125C 15mA dvd aximum linear rate of rise of off-state voltage Linear to 60%VoRM T =125.C, Gate open circuit 200V/s Gate source 20V. 20Q2 Repetitive 50Hz dl/dt Rate of rise of on-state current t<0.5us,T=125c Non-repetitive 800Aμs Threshold volta AtT=125°C -165|V 「r On-state slope resistance AtT=125° 35|mg Delay time 25C,=50A 3 1A, Total turn -on time ddt=50As, dI/dt=1Aμs 15μs HOlding current T=25°C,L=1Av=12v mA T=125C,4=100Av=50V code. t Turn-off time dV/dt=200V/us Linear to 60% Vorw dl,/dt= 30AuS, Gate open circuit Typical value GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Conditions Typ. Unit Gate trigger voltage Vopu 12V, Ta= 25C, R =6Q2 Gate trigger current Vo=12V,T9=25°C,R1=62 200 Gate non-trigger voltage At VoRM Tease =125C, R,= lkQ2 Peak reverse gate voltage 50 Peak forward gate current Anode positive with respect to cathode Peak gate power 16|W Mean gate power www.dynexsemi.com
3/13 www.dynexsemi.com DK13..FW DYNAMIC CHARACTERISTICS VTM Symbol Conditions Parameter Maximum on-state voltage At 300A peak, Tcase = 25o C I RRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125o C Gate source 20V, 20Ω t r < 0.5µs, Tj = 125˚C dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% VDRM Tj = 125o C, Gate open circuit Min. Max. Units - 2.35 V - 15 mA - 200 V/µs Repetitive 50Hz - 500 A/µs Non-repetitive - 800 A/µs dI/dt Rate of rise of on-state current VT(TO) Threshold voltage At Tvj = 125o C rT On-state slope resistance At Tvj = 125o C - V 1.65 - 3.5 mΩ t Delay time gd - 3 µs t Total turn-on time (ON)TOT - 1.5 µs Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt =50A/µs, dIG/dt = 1A/µs *Typical value. I H Holding current Tj = 25o C, ITM = 1A, VD = 12V 60* - mA Tj = 125˚C, IT = 100A, VR = 50V, dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A/µs, Gate open circuit t Turn-off time q t - 10 µs q code: W GATE TRIGGER CHARACTERISTICS AND RATINGS VDRM = 12V, Tcase = 25o C, RL = 6Ω Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 12V, Tcase = 25o C, RL = 6Ω I GT Gate trigger current VGD Gate non-trigger voltage At VDRM Tcase = 125o C, RL = 1kΩ - 3.0 V - 200 mA - 0.2 V Typ. Max. Units VRGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode PGM Peak gate power PG(AV) Mean gate power - 5.0 V - 4A - 16 W - 3.0 W
DK13FW 果NX SEMICONDUCTOR CURVES 2000 TJ=125°c 1000 ■■■ CALCULATIONS 5 出3 「T=2.833m 0.10.1503 GATE CURRENT, IG (A) INSTANTANEOUS ON-STATE VOLTAGE, VI(V) Fig 2 Maximum(limit)on-state characteristics Fig3 Gate characteristics □口口 200 Fig 4 Typical recovered charge (for a device rated VDRM500V,t =10us) 4/13 www.dynexsemi.com
4/13 www.dynexsemi.com DK13..FW CURVES Fig.2 Maximum (limit) on-state characteristics Fig.3 Gate characteristics Fig.4 Typical recovered charge (for a device rated VDRM = 600V, tq = 10µs)
米YcX DK13F SEMICONDUCTOR 0.0 0.1 TIME, t(s) Fig 5 Transient thermal impedance- junction to case 20000 INITIAL TJ=125°c 上10000 5000 v 2000 PULSE BASE WIDTH, t(ms Fig 6 Non-repetitive sub-cycle surge on-state current and lt rating www.dynexsemi.com
5/13 www.dynexsemi.com DK13..FW Fig.5 Transient thermal impedance - junction to case Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating
DK13FW 果NX SEMICONDUCTOR NOTES: 2.V.≤10V 3. RC Snubber, C=0. 22uF, R=4.7Q2 u>乙 tp PULSE WIDTH, to (us) Fig7 Energy per pulse for sinusoidal pulses NOTES ■ 1.V≤600V 2.v≤10V C Snubber, C=0.22uF, R=4.792 PULSE WIDTH,'push Fig 8 Maximum allowable peak on-state current vs pulse width for T= 65c 6/13 www.dynexsemi.com
6/13 www.dynexsemi.com DK13..FW NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.7 Energy per pulse for sinusoidal pulses Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
米YcX DK13F SEMICONDUCTOR NOTES 2.V.≤10V 3. RC Snubber, C=0.22uF, R= 4.7Q2 F tp PULSE WIDTH, to(us Fig 9 Maximum allowable peak on-state current vs pulse width for T= 90"C NOTES: 1. dl/dt= 25A/uS 2.V.≤600 3.v≤10V 4. RC Snubber, C=0. 22uF, R=4.722 PULSE WIDTH, t (us) Fig 10 Energy per pulse for trapezoidal pulses www.dynexsemi.com
7/13 www.dynexsemi.com DK13..FW NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.9 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C Fig.10 Energy per pulse for trapezoidal pulses
DK13FW 果NX SEMICONDUCTOR NOTES: 1.ddt=25A山s 2.V.≤600V 3Va≤10 4. R C Snubber, C =0.22uF, u0zo Sdi/dt lp PULSE WIDTH, tn (us) Fig 11 Maximum allowable peak on-state current vs pulse width for T.= 65"C NOTES: 1. dl/dt 25A/uS 2.V.≤600V 3.V.≤10V 4. RC Snubber, C=0.22uF, R= 4.7Q2 di/d 102 PULSE WIDTH, to(usI Fig 12 Maximum allowable peak on-state current vs pulse width for T_ .= 90.c 8/13 www.dynexsemi.com
8/13 www.dynexsemi.com DK13..FW NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
米YcX DK13F SEMICONDUCTOR NOTES 1.ddt=50Aμs 2.V.≤600V 4. RC Snubber, C=0.22uF,R=4.7Q2 L PULSE WIDTH, t (us) Fig 13 Energy per pulse for trapezoidal pulses NOTES: 1.dudt=50Aμs 2.V.≤600 3.V≤10V. 4. RC Snubber, C=0. 22uF, R=4.722 Ou=H∽zo PULSE WIDTH, tp) Fig- 14 Maximum allowable peak on-state current vs pulse width for T=65C 9/13 www.dynexsemi.com
9/13 www.dynexsemi.com DK13..FW NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.13 Energy per pulse for trapezoidal pulses Fig.14 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
DK13FW 果NX SEMICONDUCTOR NOTES: 1. dldt= 50A/uS 2.V.≤600V 3Va≤10 4. RC Snubber, C=0.22uF, R 二oudH∽zo×u PULSE WIDTH,p/s/ 103 Fig 15 Maximum allowable peak on-state current vs pulse width for T=65c NOTES 1. dl/dt= 100A/uS 2.V.≤600V 55u∽5a∝>z 4. RC Snubber, C=0.22uF, R=4.722 PULSE WIDTH, I, (usI Fig. 16 Energy per pulse for trapezoidal pulses 10/13 www.dynexsemi.com
10/13 www.dynexsemi.com DK13..FW NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.15 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C Fig.16 Energy per pulse for trapezoidal pulses