RRM 2500V 420A Fast Recovery Diode FSM 8.5kA 17V 5SDF05D2505 062mg DClink 1500V YA1114-03 Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage 2500V Half sine wave, tp=10 ms, f=50 Hz RRM Repetitive peak reverse current ≤ 50 mA VR= VRRM T=125C VoClink Permanent DC voltage for 100 FIT failure rate 1500V 100% Duty Ambient cosmic radiati VoClink Permanent DC voltage for 100 FIT failure rate 5%Du I sea level in open air. n at Mechanical data(see Fig 12) 10 kN Mounting force max 12 KN Acceleration. Device unclamped 50m/s Device clamped 200m/s 0.25kg Surface creepage distance > 30 mm Air strike distance 20 mm ABB Semiconductors AG reserves the right to change specifications without notice. AR
ABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 2500 V IFAVM = 420 A IFSM = 8.5 kA VF0 = 1.7 V rF = 0.62 mΩ VDClink = 1500 V Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters • Standard press-pack housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage 2500 V Half sine wave, tP = 10 ms, f = 50 Hz IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM, Tj = 125°C VDClink Permanent DC voltage for 100 FIT failure rate 1500 V 100% Duty VDClink Permanent DC voltage for 100 FIT failure rate V 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 12) min. 10 kN Fm Mounting force max. 12 kN a Acceleration: Device unclamped Device clamped 50 200 m/s2 m/s2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Fast Recovery Diode 5SDF 05D2505
5SDF05D2505 On-state(see Fig. 2, 3) lFAVM Max average on-state current 420 a Half sine wave, Tc=85C IFRMs Max RMS on-state current 670A lFSM Max peak non-repetitive 8.5 ka t 10 ms Before surge surge current 27 ka tp 1msT=T=125°c Jl'dt Max surge current integral 036105A3stp= 10 ms After surg 03610°A2stp= 1 ms VR=OV Forward voltage drop ≤23V|F 1000A Threshold voltage 1.7V Approximation for T=125.C Slope resistance 062mg2=500.3500A Turn-on(see Fig 4, 5) Peak forward recovery voltage s16vdt:50455-1250 Turn-off (see Fig. 6 to 11) Reverse recovery current s470 a dildo=3004s,=700A Reverse recovery charge ≤840心c|T=125°c VM=2300V Turn-off energy 0.34J Cs= 2uF(GTO snubber circuit) Thermal (see Fig. 1) Operating junction temperature range -40..125°C Storage temperature range -40..125°C Thermal resistance junction to case s 80 KKW Anode side cooled ≤80KKw「 Cathode side cooled 40 Kkw Double side cooled 10.12kN Rthch Thermal resistance case to heatsink s 16 Kk Single side cooled 8 KkW Double side cooled Analytical function for transient thermal impedance. 3 Zmc(t=∑R(1-e) RI(KkW) 9510.57 71 1.33 (S) 000900044 Fm=10.12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 2 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 2 of 6 On-state (see Fig. 2, 3) IFAVM Max. average on-state current 420 A IFRMS Max. RMS on-state current 670 A Half sine wave, Tc = 85°C IFSM Max. peak non-repetitive 8.5 kA tp = 10 ms Before surge: surge current 27 kA tp = 1 ms Tc = Tj = 125°C 0.36⋅106 A2 I s tp = 10 ms After surge: 2 dt Max. surge current integral 0.36⋅106 A2 s tp = 1 ms VR ≈ 0 V VF Forward voltage drop ≤ 2.3 V IF = 1000 A VF0 Threshold voltage 1.7 V Approximation for rF Slope resistance 0.62 mΩ IF = 500…3500 A Tj = 125°C Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 16 V di/dt = 500 A/µs, Tj = 125°C Turn-off (see Fig. 6 to 11) Irr Reverse recovery current ≤ 470 A Qrr Reverse recovery charge ≤ 840 µC Err Turn-off energy ≤ 0.34 J di/dt = 300 A/µs, IF = 700 A, Tj = 125°C, VRM = 2300 V, CS = 2µF (GTO snubber circuit) Thermal (see Fig. 1) Tj Operating junction temperature range -40...125°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled RthCH Thermal resistance case to heatsink ≤ 16 K/kW Single side cooled Fm = 10… 12 kN ≤ 8 K/kW Double side cooled Analytical function for transient thermal impedance. i 12 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Z (t) = R (1 - e ) n i 1 - t / thJC i = τ i Fm = 10… 12 kN Double side cooled
5SDF05D2505 45 0..12kN t(s) ig. 1 Transient thermal impedance (junction-to-case)Vs time in analytical and graphical form( max. values 5000 25C 4000 Idt 2000 and r. =0.62 mQ V(V Fig 2 Forward current vS forward voltage(typ Fig 3 Surge current and fusing integral vs pulse and max values)and linear approximation width( max values) for non-repetitive, half- of max. curve at125°C. sinusoidal surge current pulses ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 3 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 3 of 6 Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values). Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses
5SDF05D2505 V,l(1) (t) t(typ)≤10s 1000 1500 Fig 4 Typical forward voltage waveform when the Fig 5 Forward recovery voltage Vs turn-on di/dt diode is turned on with a high dildt. (max values) En=∫()V()ot di/dt (t) Fig 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in gto circuits ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 4 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 4 of 6 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). Fig. 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in GTO circuits
5SDF05D2505 1000 C4=1…3uF C.=1.3uF l=2000A T=125°c 400HVRM:No influence V=1.5.2.5 kV =2000A 300 700A 200 200 200 didt(A/μs) Fig 7 Reverse recovery current vs. turn off di/dt Fig 8 Reverse recovery charge vs. turn off di/dt (max values) (max values) 500 l=300A =700A 125°C 400 T=125°c V=1.5.2.5kV Vu=1.5.25kV di/dt(A/us) di/dt(A/us) Fig. 9 Turn-off energy vs turn-off di/dt for lF= 300 Fig. 10 Turn-off energy Vs. turn-off di/dt for lF =700 A(max values A(max values) ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 5 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 5 of 6 Fig. 7 Reverse recovery current vs. turn off di/dt (max. values). Fig. 8 Reverse recovery charge vs. turn off di/dt (max. values). Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300 A (max. values). Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700 A (max. values)
5SDF05D2505 l=2000A T.=125°C 400V=1525ky 26±0.5 uF 2ho 3.6×4 100 di/dt (A/us) Fig 11 Turn-off energy VS. turn-off di/dt for lF 2000 Fig. 12 Outline drawing. All dimensions are in A(max values millimeters and represent nominal values unless stated otherwise ABB Semiconductors AG reserves the right to change specifications without notice. ABR ABB Semiconductors aG No. 5SsYA1114-03 Sep 01 Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone+41(0)628886419 +41(0)628886306 Email abbsem@ch.abb.com Internet w.abbsem com
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Doc. No. 5SYA1114-03 Sep. 01 Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email abbsem@ch.abb.com Internet www.abbsem.com Fig. 11 Turn-off energy vs. turn-off di/dt for IF = 2000 A (max. values). Fig. 12 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise