1PMT5.0AT1/T3 Series zener transient ON Voltage Suppressor POWERMITE Package oN Semiconductor The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The ZENER OVERVOLTAGE POWERMITE has the same thermal performance as the SMa while TRANSIENT SUPPRESSOR being 50% smaller in footprint area, and delivering one of the lowest 5-58v height profiles(1. 1 mm)in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, 200 W PEAK POWER power supplies and many other industrial/consumer applications Specification Features: Stand-off Voltage: 5-58V 1: CATHODE Peak Power-200W@ 1 ms(IPMT5.0A-IPMT36A) 2: ANODE 175w@ I ms(IPMT40A-IPMT58A) Maximum Clamp Voltage ( Peak Pulse Current e Low Leakage POWERMITE CASE 457 Response Time is Typically I ns PLASTIC ESD Rating of Class 3( 16 kv)per Human Body Model Low Profile- Maximum Height of 1. 1 mm MARKING DIAGRAM Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment MXX Small Footprint-Footprint Area of 8.45 mm2 CATHODE ANODE POWERMItE is JEDEC Registe DO-216AA Cathode Indicated by Polarity Band Specific Device Code Pb-Free Package is Available (See Table Next Page) Date Code Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic LEAD ORIENTATION IN TAPE FINISH: All external surfaces are corrosion resistant and leads are Cathode(Short) Lead to Sprocket Holes readily solderable MOUNTING POSITION: Any ORDERING INFORMATION MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES 260° for 10 Seconds 1PMT5.0AT1 POWERMITE 3, 000/Tape& Reel 1PMT5.0AT3 POWERMITE 12,000/Tape&Reel 1PMT5.0AT3G POWERMITE 12,000/Tape &Reel Pb-F refer to ou and Reel Packaging Specifications Brochure BRD8011/D on Order Number 2004-Rev.7 PMT5.0AT3/D
Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 7 1 Publication Order Number: 1PMT5.0AT3/D 1PMT5.0AT1/T3 Series Zener Transient Voltage Suppressor POWERMITE Package The 1PMT5.0AT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. Specification Features: • Stand−off Voltage: 5 − 58 V • Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A) − 175 W @ 1 ms (1PMT40A − 1PMT58A) • Maximum Clamp Voltage @ Peak Pulse Current • Low Leakage • Response Time is Typically 16 kV) per Human Body Model • Low Profile − Maximum Height of 1.1 mm • Integral Heat Sink/Locking Tabs • Full Metallic Bottom Eliminates Flux Entrapment • Small Footprint − Footprint Area of 8.45 mm2 • POWERMITE is JEDEC Registered as DO−216AA • Cathode Indicated by Polarity Band • Pb−Free Package is Available Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR 5 − 58 V 200 W PEAK POWER Device Package Shipping† ORDERING INFORMATION 1PMT5.0AT1 POWERMITE 3,000/Tape & Reel POWERMITE CASE 457 PLASTIC 1 2 1: CATHODE 2: ANODE 1 2 LEAD ORIENTATION IN TAPE: Cathode (Short) Lead to Sprocket Holes Mxx = Specific Device Code xx = 5 − 58 = (See Table Next Page) D = Date Code MARKING DIAGRAM Mxx D 1 CATHODE 2 ANODE 1PMT5.0AT3 POWERMITE 12,000/Tape & Reel http://onsemi.com 1PMT5.0AT3G POWERMITE (Pb−Free) 12,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D
1PMT50AT1/T3 Series MAXIMUM RATING Rating Symbol Value Maximum Ppk Dissipation, ( PW-10/1000 us)(Note 1)(1PMT5.0A-1PMT36A P Maximum Ppk Dissipation, (PW-10/1000 us)(Note 1)(1PMT40A-1PMT58A) W Maximum Ppk Dissipation, (PW-8/20 us)(Note 1) 1000 DC Power Dissipation TA= 25C(Note 2) Derate above25° mwrC Thermal Resistance from Junction-to-Ambient Thermal Resistance from Junction-to-Lead(Anode) Maximum DC Power Dissipation( Note 3 Thermal Resistance from Junction to Tab(Cathode) °CN Operating and Storage Temperature Range 55to+150 1. Non-repetitive current pulse at TA= 25C 2. Mounted with recommended minimum pad size, DC board FR-4 3. At Tab( Cathode)temperature, Ttab=75.C ELECTRICAL CHARACTERISTICS (TA=25C unless therwise noted, Ve= 3.5V Max @ lF(Note 4)=35 A) Symbol Parameter Maximum Reverse Peak Pulse Current Vc Clamping Voltage @lpp VRWM Working Peak Reverse Voltage MAXimu e Leakage Current VRWM Breakdown Voltage IT Forward Current Forward voltage IF Uni-Directional Tvs ELECTRICAL CHARACTERISTICS(TL=30 C unless otherwise noted, VF= 1.25 Volts 200 mA) VBR IT(V)(Note 6) IT IR@VRWM Vc @lpP IpP(A) 1PMT5.0AT1,T3 50 21 1PMT70AT1.T MKM 1PMT12AT1 T3 MLE 13.3 14.7 10.1 1PMT16AT1 T3 MLP 1PMT18AT1 T3 MLT 2682 18.75 19.7 1.0 50 2 21.0 22.1 1PMT22AT1 T3 MLX 244 26.9 5.6 1PMT24AT1 T3 MLZ 2 28.1 29.5 1.0 89 5.1 1PMT26AT1 T3 MME 42.1 32.8 36.8 1PMT33AT1 T3 36.7 1PMT36AT1 T3 MMP 40.0 42.1 44.2 1.0 58.1 3.4 1PMT40AT1 T3 64.5 533561 1PMT51AT1 T3 MMZ 51 597 62.7 1.0 5.0 24 2.1 MT5BAT 4. 1/2 sine wave(or equivalent square wave), PW=8.3 ms, duty cycle= 4 pulses per minute maximum 5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRwm which should be equal to or great than the DC or continuous peak operating voltage level 6. VBR measured at pulse test of25°C 7. Surge current waveform per Figure 2 and derate httpllonsemi.com
Uni−Directional TVS IPP IF V I IR IT VC VBR VRWM VF 1PMT5.0AT1/T3 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Maximum Ppk Dissipation, (PW−10/1000 s) (Note 1) (1PMT5.0A − 1PMT36A) Ppk 200 W Maximum Ppk Dissipation, (PW−10/1000 s) (Note 1) (1PMT40A − 1PMT58A) Ppk 175 W Maximum Ppk Dissipation, (PW−8/20 s) (Note 1) Ppk 1000 W DC Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C Thermal Resistance from Junction−to−Ambient °PD° RJA 500 4.0 248 °mW mW/°C °C/W Thermal Resistance from Junction−to−Lead (Anode) RJanode 35 °C/W Maximum DC Power Dissipation (Note 3) Thermal Resistance from Junction to Tab (Cathode) °PD° RJcathode 3.2 23 W °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. Non−repetitive current pulse at TA = 25°C. 2. Mounted with recommended minimum pad size, DC board FR−4. 3. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 35 A) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) VRWM VBR @ IT (V) (Note 6) IT IR @ VRWM VC @ IPP IPP (A) Device Marking (Note 5) Min Nom Max (mA) (A) (V) (Note 7) 1PMT5.0AT1, T3 MKE 5.0 6.4 6.7 7.0 10 800 9.2 21.7 1PMT7.0AT1, T3 MKM 7.0 7.78 8.2 8.6 10 500 12 16.7 1PMT12AT1, T3 MLE 12 13.3 14.0 14.7 1.0 5.0 19.9 10.1 1PMT16AT1, T3 MLP 16 17.8 18.75 19.7 1.0 5.0 26 7.7 1PMT18AT1, T3 MLT 18 20.0 21.0 22.1 1.0 5.0 29.2 6.8 1PMT22AT1, T3 MLX 22 24.4 25.6 26.9 1.0 5.0 35.5 5.6 1PMT24AT1, T3 MLZ 24 26.7 28.1 29.5 1.0 5.0 38.9 5.1 1PMT26AT1, T3 MME 26 28.9 30.4 31.9 1.0 5.0 42.1 4.8 1PMT28AT1, T3 MMG 28 31.1 32.8 34.4 1.0 5.0 45.4 4.4 1PMT30AT1, T3 MMK 30 33.3 35.1 36.8 1.0 5.0 48.4 4.1 1PMT33AT1, T3 MMM 33 36.7 38.7 40.6 1.0 5.0 53.3 3.8 1PMT36AT1, T3 MMP 36 40.0 42.1 44.2 1.0 5.0 58.1 3.4 1PMT40AT1, T3 MMR 40 44.4 46.8 49.1 1.0 5.0 64.5 2.7 1PMT48AT1, T3 MMX 48 53.3 56.1 58.9 1.0 5.0 77.4 2.3 1PMT51AT1, T3 MMZ 51 56.7 59.7 62.7 1.0 5.0 82.4 2.1 1PMT58AT1, T3 MNG 58 64.4 67.8 71.2 1.0 5.0 93.6 1.9 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at ambient temperature of 25°C. 7. Surge current waveform per Figure 2 and derate per Figure 4.
1PMT5 0AT1/T3 Series TYPICAL PROTECTION CIRCUIT LOAD 自聿镛聿聿 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% PEAK VALUE-lRSM-ts10 us s HALF VALUE PULSE WIDTH (us) t, TIME(ms) Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 us Pulse Waveform ItPEAK VALUE IRSM@8us 8 PULSE WIDTH (tp) IS DEFINED_为 AS THAT POINT WHERE THE PEAK CURRENT DECAY 8 2 G u2山告 HALF VALUE IRSM2@ 20 us TA, AMBIENT TEMPERATURE (C) Figure 3. 8 x 20 us Pulse Waveform Figure 4. Pulse Derating Curve httpllonsemi.com
1PMT5.0AT1/T3 Series http://onsemi.com 3 P , PEAK POWER (WATTS) P tP, PULSE WIDTH (s) 100 1000 10,000 1.0 10 100 10 01 2 3 4 0 50 100 t, TIME (ms) VALUE (%) HALF VALUE − IRSM 2 PEAK VALUE − IRSM tr tr≤ 10 s TYPICAL PROTECTION CIRCUIT Vin VL Zin LOAD PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 C° 100 80 60 40 20 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 120 140 160 tP PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 s Pulse Waveform 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 t, TIME (s) % OF PEAK PULSE CURRENT tP tr PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s PEAK VALUE IRSM @ 8 s HALF VALUE IRSM/2 @ 20 s Figure 3. 8 X 20 s Pulse Waveform 1000 10,000 Figure 4. Pulse Derating Curve
1PMT5 0AT1/T3 Series PULSE W Szou6 F0.07 005 000 05 D, DUTY CYCLE (%) T, TEMPERATURE(°C) Figure 5. Typical Derating Factor for Duty Cycle Figure 6. Steady State Power Derating 10000 ugo>o 1.0 08 cuozEoaroo 1000 MEASURED ZERO BIAS 04 100 MEASURED (Q 50%VE T, TEMPERATURE(°C) WORKING PEAK REVERSE VOLTAGE (VOLTS) Figure 7. Forward voltage Figure 8. Capacitance versus Working Peak Reverse voltage httpllonsemi.com
1PMT5.0AT1/T3 Series http://onsemi.com 4 Figure 5. Typical Derating Factor for Duty Cycle DERATING FACTOR 1 ms 10 s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 s 0.1 0.2 0.5 2 5 10 50 1 20 100 D, DUTY CYCLE (%) PULSE WIDTH 10 ms Figure 6. Steady State Power Derating 1.2 1.0 0.8 0.6 0.4 0.2 0 −55 25 85 150 T, TEMPERATURE (°C) V , TYPICAL FORWARD VOLTAGE (VOLTS) F Figure 7. Forward Voltage 25 50 75 100 125 175 3.5 2.5 2 1.5 1 0 T, TEMPERATURE (°C) P , MAXIMUM POWER DISSIPATION (W) D 0.5 TL 150 3 10,000 1000 100 10 1 10 100 WORKING PEAK REVERSE VOLTAGE (VOLTS) C, CAPACITANCE (pF) Figure 8. Capacitance versus Working Peak Reverse Voltage MEASURED @ 50% VRWM MEASURED @ ZERO BIAS
1PMT5 0AT1/T3 Series OUTLINE DIMENSIONS POWERMITE cASE457-04 ISSUE D J4[090018dd ROTRUSIONS OR GATE BURRS MOLD FLASH NS OR GATE BURRS SHALL NO EXCEED 0. 15 (0.006) PER SIDE J 050R 回可B回回 SOLDERING FOOTPRINT 2.67 0.105 0.030 SCALE 10: 1 POWERMITER For additional information on our Pb-Free strategy and soldering details, please download the oN Semiconductor Soldering an Mounting Techniques Reference Manual, SOLDERRM/D httpllonsemi.com
1PMT5.0AT1/T3 Series http://onsemi.com 5 OUTLINE DIMENSIONS DIM MIN MAX MIN MAX MILLIMETERS INCHES A 1.75 2.05 0.069 0.081 B 1.75 2.18 0.069 0.086 C 0.85 1.15 0.033 0.045 D 0.40 0.69 0.016 0.027 F 0.70 1.00 0.028 0.039 H −0.05 +0.10 −0.002 +0.004 J 0.10 0.25 0.004 0.010 K 3.60 3.90 0.142 0.154 L 0.50 0.80 0.020 0.031 R 1.20 1.50 0.047 0.059 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 0.08 (0.003) C M T B S S −A− −B− S J K −T− H L J C D 0.08 (0.003) C M T B S S F TERM. 1 TERM. 2 R 0.50 REF 0.019 REF POWERMITE CASE 457−04 ISSUE D POWERMITE 2.54 0.100 0.635 0.025 1.27 0.050 2.67 0.105 0.762 0.030 mm inches SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT*
1PMT5 0AT1/T3 Series POWERMITE and COoLPACK are registered trademarks of and used under a license from Microsemi Corporation re registered trademark dustries, LLC (SCILLC). SCILLC I fypical parameters which may be provided in SCiLLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All ded for surgical implant into the body, or manufacture of the part. SCILLC is an Equal Opportunity Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT. N.AmericanTechnicalSupport800-282-9855TollFreeOnSemiconductorWebsitehttp:/onsemi.com nada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canad 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 For additional inf on, please contact you Phone:81-3-5773-3850 local Sales Representative. 1PMT5./D
1PMT5.0AT1/T3 Series http://onsemi.com 6 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 1PMT5.0AT3/D POWERMITE and COOLPACK are registered trademarks of and used under a license from Microsemi Corporation. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative
