Vol.19 No.5 王元玮等：真空液相重结晶法改善InSb薄膜的组织和性能 ·589· 4 Thompson P E.Davis J D,Waterman J R,et al.Use of Atomic Layer Epitaxy Buffer for the Growth of InSb on GaAs by Molecular Beam Epitaxy.J Appl Phys.1991,69:7766 5 Chen J C,Bush P,Chen W K,et al.Low-temperature Heteroepitaxial Growth of InSb on CdTe by Metalorgnic Chemical Vapor Deposition.Appl Phys Letters,1988,53:773 6 Lan WW,Shin I.InSb Thin Films Prepared by A Multilayer Vacuum Deposition Method.Material Letters, 1993,16:8 7王元玮，萧宜雍.结晶速度对ISb-NiSb共晶复合材料磁敏电阻性能影响R/R的研究，功能材料，1995， 26(3):220 Improving Structure and Electrical Properties of InSb Films by Vacuum Recrystallization Wang Yuanwei Tian Yue?Wang Liangming He Wenguo 1)Material Science and Engineering School,UST Beijing,Beijing 100083,China 2)Applied Science School,UST Beijing ABSTRACT A heat-treatment procedure has been applied to InSb films prepared by thermal evap- oration and magnetron sputtering,the films have been recrystallised from the melt in the vaccum with Ar protection.From the X-ray diffraction and SEM structure studies,it is found that the InSb films are mixtures of InSb,In,Sb before heat treatment and are mainly single phase of InSb after recrystallization.The InSb grains grow with faceted interface and regular morphology.The elec- tron mobility of InSb films (at room temperature)have been increased greatly after heat-treatment with 1.31x 10cm2/(V.s)to 4.47x 10cm2/(V.s)(thermal evaporation)and 2.15 x 10 cm2/(V.s)to 2.04 x 10*cm/(V.s)(magnetron sputtering)respectively. KEY WORDS vacuum recrystallization,film forming,InSb film心 王 元玮等 真空 液相 重结晶法 改善 薄膜 的组织和性能 七 ， 场 ， ， 而 助 七 沁 以 勿 ， ， ， ， · 一 详 乒 而 ， ， ， 玩 尸 曰 块 · 玫 ’ ， 王元玮 ， 萧宜雍 结晶速度对 卜瓦 共晶复合材料磁敏 电阻性能影 响 刁凡的研究 · 功能材料 ， ， 肠 肠 肋 加 价 飞 ， ， ， ， 飞 擎 。 ， ， 而 ， ， 而 泊 七 批 比 ， · ‘ ， · ， 耐 · ， · 吧 详 ，