G MI-mode FIGURE 30.2 (a)Triac symbol and(b) volt-ampere characteristics. Source: B K. Bose, Modern Power Electronics: Evalu ation, Technology and Applications, p 5. e 1992 IEEE. Anode A IGURE 30.3 (a)GTO symbol and(b)turn-off characteristics. Source: B.K. Bose, Modern Power Electronics: Evaluation, Technology, and Applications, p. 5.@ 1992 IEEE) A GTO has a poor turn-off current gain of the order of 4 to 5. For example, a 2000-A peak current GTO may require as high as 500 A of reverse gate current. Also, a gto has the tendency to latch at temperatures above 125". GTOs are available up to about 4500 V, 2500 A. Reverse-Conducting Thyristor(RCT)and Asymmetrical Silicon-Controlled Rectifier(ASCR) Normally in inverter applications, a diode in antiparallel is connected to the thyristor for commutation/free wheeling purposes. In RCTs, the diode is integrated with a fast switching thyristor in a single silicon chip. Thus, c 2000 by CRC Press LLC© 2000 by CRC Press LLC A GTO has a poor turn-off current gain of the order of 4 to 5. For example, a 2000-A peak current GTO may require as high as 500 A of reverse gate current. Also, a GTO has the tendency to latch at temperatures above 125°C. GTOs are available up to about 4500 V, 2500 A. Reverse-Conducting Thyristor (RCT) and Asymmetrical Silicon-Controlled Rectifier (ASCR) Normally in inverter applications, a diode in antiparallel is connected to the thyristor for commutation/free￾wheeling purposes. In RCTs, the diode is integrated with a fast switching thyristor in a single silicon chip. Thus, FIGURE 30.2 (a) Triac symbol and (b) volt-ampere characteristics. (Source: B.K. Bose, Modern Power Electronics: Evalu￾ation, Technology, and Applications, p. 5. © 1992 IEEE.) FIGURE 30.3 (a) GTO symbol and (b) turn-off characteristics. (Source: B.K. Bose, Modern Power Electronics: Evaluation, Technology, and Applications, p. 5. © 1992 IEEE.)