《电子工程师手册》学习资料（英文版）chapter 30 Power Electronics

30.1 Power Semiconductor Devices Thyristor and Triac. Gate Turn-Off Thyristor(GTO). Reverse- Conducting Thyristor(RCT) and Asymmetrical Silicon-Controlled Rectifier (ASCR). Power Transistor Power MOSFET. Insulated-Gate Bipolar Transistor (IGBT). MOS Controlled

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30 Power electronics 30.1 Power Semiconductor Devices Thyristor and Triac. Gate Turn-Off Thyristor(GTO).Reverse- Conducting Thyristor(RCT)and Asymmetrical Silicon-Controlled Rectifier (ASCR). Power Transistor. Power MOSFET Insulated-Gate Bipolar Transistor(IGBT).MOS Controlled Thyristor(MCT) Kaushik rajashekara 30.2 Power Conversion elphi Energy e Engine AC-DC Converters. Cycloconverters. DC-to-AC Management Systems Converters DC-DC Converters Ashoka K.s. bhat 30.3 Power Supplies DC Power Supplies. AC Power Supplies.Special Power Supplies 30.4 Converter Control of Machines Bimal K. bose Converter Control of DC machines Converter Control of ac University of Tennessee Machines 30.1 Power Semiconductor devices Kaushik rajashekara The modern age of power electronics began with the introduction of thyristors in the late 1950s. Now there several types of power devices available for high-power and high-frequency applications. The most notable ower devices are gate turn-off thyristors, power Darlington transistors, power MOSFETS, and insulated -ga bipolar transistors(IGBTs). Power semiconductor devices are the most important functional elements in all power conversion applications. The power devices are mainly used as switches to convert power from one form to another. They are used in motor control systems, uninterrupted power supplies, high-voltage dc transmission, power supplies, induction heating, and in many other power conversion applications. A review of the basic characteristics of these power devices is presented in this section Thyristor and Triac The thyristor, also called a silicon-controlled rectifier(SCR), is basically a four-layer three-junction pnpn device It has three terminals: anode, cathode, and gate. The device is turned on by applying a short pulse across the gate and cathode. Once the device turns on, the gate loses its control to turn off the device. The turn-off is achieved by applying a reverse voltage across the anode and cathode The thyristor symbol and its volt-ampere haracteristics are shown in Fig. 30. 1. There are basically two classifications of thyristors: converter grade and inverter grade. The difference between a converter-grade and an inverter-grade thyristor is the low turn-off time(on the order of a few microseconds) for the latter. The converter-grade thyristors are slow type and are used in natural commutation(or phase-controlled)applications. Inverter-grade thyristors are used in forced commutation applications such as dc-dc choppers and dc-ac inverters. The inverter-grade thyristors are turned off by forcing the current to zero using an external commutation circuit. This requires additional commutating components, thus resulting in additional losses in the inverter. c 2000 by CRC Press LLC

© 2000 by CRC Press LLC 30 Power Electronics 30.1 Power Semiconductor Devices Thyristor and Triac • Gate Turn-Off Thyristor (GTO) • ReverseConducting Thyristor (RCT) and Asymmetrical Silicon- Controlled Rectifier (ASCR) • Power Transistor • Power MOSFET • Insulated-Gate Bipolar Transistor (IGBT) • MOS Controlled Thyristor (MCT) 30.2 Power Conversion AC-DC Converters • Cycloconverters • DC-to-AC Converters • DC-DC Converters 30.3 Power Supplies DC Power Supplies • AC Power Supplies • Special Power Supplies 30.4 Converter Control of Machines Converter Control of DC Machines • Converter Control of AC Machines 30.1 Power Semiconductor Devices Kaushik Rajashekara The modern age of power electronics began with the introduction of thyristors in the late 1950s. Now there are several types of power devices available for high-power and high-frequency applications. The most notable power devices are gate turn-off thyristors, power Darlington transistors, power MOSFETs, and insulated-gate bipolar transistors (IGBTs). Power semiconductor devices are the most important functional elements in all power conversion applications. The power devices are mainly used as switches to convert power from one form to another. They are used in motor control systems, uninterrupted power supplies, high-voltage dc transmission, power supplies, induction heating, and in many other power conversion applications. A review of the basic characteristics of these power devices is presented in this section. Thyristor and Triac The thyristor, also called a silicon-controlled rectifier (SCR), is basically a four-layer three-junction pnpn device. It has three terminals: anode, cathode, and gate. The device is turned on by applying a short pulse across the gate and cathode. Once the device turns on, the gate loses its control to turn off the device. The turn-off is achieved by applying a reverse voltage across the anode and cathode. The thyristor symbol and its volt-ampere characteristics are shown in Fig. 30.1. There are basically two classifications of thyristors: converter grade and inverter grade. The difference between a converter-grade and an inverter-grade thyristor is the low turn-off time (on the order of a few microseconds) for the latter. The converter-grade thyristors are slow type and are used in natural commutation (or phase-controlled) applications. Inverter-grade thyristors are used in forced commutation applications such as dc-dc choppers and dc-ac inverters. The inverter-grade thyristors are turned off by forcing the current to zero using an external commutation circuit. This requires additional commutating components, thus resulting in additional losses in the inverter. Kaushik Rajashekara Delphi Energy & Engine Management Systems Ashoka K. S. Bhat University of Victoria Bimal K. Bose University of Tennessee

Forward FIGURE 30.1 (a) Thyristor symbol and(b) volt-ampere characteristics. Source: B K. Bose, Modern Power Electronics Evaluation, Technology and Applications, P 5.0 1992 IEEE) Thyristors are highly rugged devices in terms of transient currents, dildt, and dw/dt capability. The fc voltage drop in thyristors is about 1.5 to 2 V, and even at higher currents of the order of 1000 A, it exceeds 3 V. While the forward voltage determines the on-state power loss of the device at any given current, the switching power loss becomes a dominating factor affecting the device junction temperature at high operating frequencies. Because of this, the maximum switching frequencies possible using thyristors are limited in comparison with other power devices considered in this section Thyristors have I2t withstand capability and can be protected by fuses. The nonrepetitive surge current capability for thyristors is about 10 times their rated root mean square(rms)current. They must be protected by snubber networks for dv/dt and di/dt effects. If the specified dv/dt is exceeded, thyristors may start conducting without applying a gate pulse In dc-to-ac conversion applications it is necessary to use an antiparallel diode of similar rating across each main thyristor. Thyristors are available up to 6000 V, 3500A A triac is functionally a pair of converter-grade thyristors connected in antiparallel. The triac symbol and volt-ampere characteristics are shown in Fig. 30. 2. Because of the integration, the triac has poor reapplied dv/dt, curren tivity at turn-on, and longer turn-off time. Triacs are mainly used in phase control applications such as in ac regulators for lighting and fan control and in solid-state ac relays Gate Turn-Off Thyristor (GTO The Gto is a power switching device that can be turned on by a short pulse of gate current and turned off by a reverse gate pulse. This reverse gate current amplitude is dependent on the anode current to be turned off. Hence there is no need for an external commutation circuit to turn it off. Because turn-off is provided by bypassing carriers directly to the gate circuit, its turn-off time is short, thus giving it more capability for high frequency operation than thyristors. The GTO symbol and turn-off characteristics are shown in Fig. 30.3 GTOs have the Pt withstand capability and hence can be protected by semiconductor fuses. For reliable operation of GTOs, the critical aspects are proper design of the gate turn-off circuit and the snubber circuit. c 2000 by CRC Press LLC

© 2000 by CRC Press LLC Thyristors are highly rugged devices in terms of transient currents, di/dt, and dv/dt capability. The forward voltage drop in thyristors is about 1.5 to 2 V, and even at higher currents of the order of 1000 A, it seldom exceeds 3 V. While the forward voltage determines the on-state power loss of the device at any given current, the switching power loss becomes a dominating factor affecting the device junction temperature at high operating frequencies. Because of this, the maximum switching frequencies possible using thyristors are limited in comparison with other power devices considered in this section. Thyristors have I 2t withstand capability and can be protected by fuses. The nonrepetitive surge current capability for thyristors is about 10 times their rated root mean square (rms) current. They must be protected by snubber networks for dv/dt and di/dt effects. If the specified dv/dt is exceeded, thyristors may start conducting without applying a gate pulse. In dc-to-ac conversion applications it is necessary to use an antiparallel diode of similar rating across each main thyristor. Thyristors are available up to 6000 V, 3500 A. A triac is functionally a pair of converter-grade thyristors connected in antiparallel. The triac symbol and volt-ampere characteristics are shown in Fig. 30.2. Because of the integration, the triac has poor reapplied dv/dt, poor gate current sensitivity at turn-on, and longer turn-off time. Triacs are mainly used in phase control applications such as in ac regulators for lighting and fan control and in solid-state ac relays. Gate Turn-Off Thyristor (GTO) The GTO is a power switching device that can be turned on by a short pulse of gate current and turned off by a reverse gate pulse. This reverse gate current amplitude is dependent on the anode current to be turned off. Hence there is no need for an external commutation circuit to turn it off. Because turn-off is provided by bypassing carriers directly to the gate circuit, its turn-off time is short, thus giving it more capability for highfrequency operation than thyristors. The GTO symbol and turn-off characteristics are shown in Fig. 30.3. GTOs have the I2 t withstand capability and hence can be protected by semiconductor fuses. For reliable operation of GTOs, the critical aspects are proper design of the gate turn-off circuit and the snubber circuit. FIGURE 30.1 (a) Thyristor symbol and (b) volt-ampere characteristics. (Source: B.K. Bose, Modern Power Electronics: Evaluation, Technology, and Applications, p. 5. © 1992 IEEE.)

ne number of power devices could be reduced. This integration brings forth a substantial improvement of the static and dynamic characteristics as well as its overall circuit performance The RCTs are designed mainly for specific applications such as traction drives. The antiparallel diode lin the reverse voltage across the thyristor to 1 to 2 V. Also, because of the reverse recovery behavior of the diodes, the thyristor may see very high reapplied dv/dt when the diode recovers from its reverse voltage. This necessitates se of large RC snubber networks to suppress voltage transients. As the range of application of thyristors and diodes extends into higher frequencies, their reverse recovery charge becomes increasingly important. Higl recovery charge results in high power dissipation during switching. The ASCR has a similar forward blocking capability as an inverter-grade thyristor, but it has a limited reverse blocking(about 20-30 V)capability. It has an on-state voltage drop of about 25% less than an inverter-grade thyristor of a similar rating. The ASCR features a fast turn-off time; thus it can work at a higher frequency n an SCR. Since the turn-off time is down by a factor of nearly 2, the size of the commutating components can be halved. Because of this, the switching losses will also be low Gate-assisted turn-off techniques are used to even further reduce the turn-off time of an ASCR. The appli cation of a negative voltage to the gate during turn -off helps to evacuate stored charge in the device and aids the recovery mechanisms. This will in effect reduce the turn-off time by a factor of up to 2 over the conventional Power transist Power transistors are used in applications ranging from a few to several hundred kilowatts and switchin frequencies up to about 10 kHz. Power transistors used in power conversion applications are generally npn type. The power transistor is turned on by supplying sufficient base current, and this base drive has to be maintained throughout its conduction off by remo ng voltage slightly negative(within -VBE max). The saturation voltage of the device is normally 0.5 to 2.5V and increases as the current increases. Hence the on-state losses increase more than proportionately with current. The transistor off-state losses are much lower than the on-state losses because the leakage current of the device is of the order of a few milliamperes. Because of relatively larger switching times, the switching loss significantly increases with switching frequency Power transistors can block only forward voltages. The reverse peak voltage rating of these devices is as low as 5 to 10 V. Power transistors do not have Ft withstand capability. In other words, they can absorb only very little energy before breakdown. Therefore, they cannot be protected by semiconductor fuses, and thus an electronic pro- tection method has to be used To eliminate high base current requirements, Darlington con figurations are commonly used. They are available in monolithic or in isolated packages. The basic Darlington configuration is shown schematically in Fig. 30.4. The Darlington configuration resents a specific advantage in that it can considerably Increase the current switched by the transistor for a given base drive. The 1 Transat for the Darlington is generally more than that of a single transistor of similar rating with corresponding increase in on state power loss. During switching, the reverse-biased collector junction may show hot spot breakdown effects that are specified by reverse-bias safe operating area(RBSOA)and forward bias safe operating area(FBSOA). Modern devices with highly inter- digited emitter base geometry force more uniform current dis- FIGURE 30.4 A two-stage Darlington transis- tribution and therefore considerably improve second breakdown tor with bypass diode.(Source:BKBose,Moo effects. Normally, a well-designed switching aid network con- ern Power Electronics: Evaluation, Technology strains the device operation well within the soas and Applications, P 6.0 1992 IEEE. c 2000 by CRC Press LLC

© 2000 by CRC Press LLC the number of power devices could be reduced. This integration brings forth a substantial improvement of the static and dynamic characteristics as well as its overall circuit performance. The RCTs are designed mainly for specific applications such as traction drives. The antiparallel diode limits the reverse voltage across the thyristor to 1 to 2 V. Also, because of the reverse recovery behavior of the diodes, the thyristor may see very high reapplied dv/dt when the diode recovers from its reverse voltage. This necessitates use of large RC snubber networks to suppress voltage transients. As the range of application of thyristors and diodes extends into higher frequencies, their reverse recovery charge becomes increasingly important. High reverse recovery charge results in high power dissipation during switching. The ASCR has a similar forward blocking capability as an inverter-grade thyristor, but it has a limited reverse blocking (about 20–30 V) capability. It has an on-state voltage drop of about 25% less than an inverter-grade thyristor of a similar rating. The ASCR features a fast turn-off time; thus it can work at a higher frequency than an SCR. Since the turn-off time is down by a factor of nearly 2, the size of the commutating components can be halved. Because of this, the switching losses will also be low. Gate-assisted turn-off techniques are used to even further reduce the turn-off time of an ASCR. The application of a negative voltage to the gate during turn-off helps to evacuate stored charge in the device and aids the recovery mechanisms. This will in effect reduce the turn-off time by a factor of up to 2 over the conventional device. Power Transistor Power transistors are used in applications ranging from a few to several hundred kilowatts and switching frequencies up to about 10 kHz. Power transistors used in power conversion applications are generally npn type. The power transistor is turned on by supplying sufficient base current, and this base drive has to be maintained throughout its conduction period. It is turned off by removing the base drive and making the base voltage slightly negative (within –VBE(max)). The saturation voltage of the device is normally 0.5 to 2.5 V and increases as the current increases. Hence the on-state losses increase more than proportionately with current. The transistor off-state losses are much lower than the on-state losses because the leakage current of the device is of the order of a few milliamperes. Because of relatively larger switching times, the switching loss significantly increases with switching frequency. Power transistors can block only forward voltages. The reverse peak voltage rating of these devices is as low as 5 to 10 V. Power transistors do not have I2 t withstand capability. In other words, they can absorb only very little energy before breakdown. Therefore, they cannot be protected by semiconductor fuses, and thus an electronic protection method has to be used. To eliminate high base current requirements, Darlington con- figurations are commonly used. They are available in monolithic or in isolated packages. The basic Darlington configuration is shown schematically in Fig. 30.4. The Darlington configuration presents a specific advantage in that it can considerably increase the current switched by the transistor for a given base drive. The VCE(sat) for the Darlington is generally more than that of a single transistor of similar rating with corresponding increase in onstate power loss. During switching, the reverse-biased collector junction may show hot spot breakdown effects that are specified by reverse-bias safe operating area (RBSOA) and forward bias safe operating area (FBSOA). Modern devices with highly interdigited emitter base geometry force more uniform current distribution and therefore considerably improve second breakdown effects. Normally, a well-designed switching aid network constrains the device operation well within the SOAs. FIGURE 30.4 A two-stage Darlington transistor with bypass diode. (Source: B.K. Bose, Modern Power Electronics: Evaluation, Technology, and Applications, p. 6. © 1992 IEEE.)

ower MOSFet Power MOSFETS are marketed by different manufacturers with differences in internal geometry and with different names such as MegaMOS, HEXFET, SIPMOS, and TMOS. They have unique features that make them potentially attractive for switching applications. They are essentially voltage-driven rather than current-driven devices, unlike bipolar transistors The gate of a MOSFET is isolated electrically from the source by a layer of silicon oxide. The gate draws only a minute leakage current of the order of nanoamperes. Hence the gate drive circuit is simple and power loss in the gate control circuit is practically negligible. Although in steady state the gate draws virtually no current, this is not so under transient conditions. The gate-to-source and gate-to-drain capacitances have to be charged and discharged appropriately to obtain the desired switching speed, and the drive circuit must have a sufficiently low output impedance to supply the required charging and discharging currents. The circuit symbol of a power MOSFET is shown in Fig. 30.5. Power MOSFETs are majority carrier devices, and there is no Drain minority carrier storage time. Hence they have exceptionally fas rise and fall times. They are essentially resistive devices when turned on, while bipolar transistors present a more or less co It VcEst) over the normal operating range. Power dissipation in MOSFETs is Id-Rpston), and in bipolars it is ICVcEsat). At low currents, therefore, a power MOSFET may have a lower conduc- Gate tion loss than a comparable bipolar device, but at higher cur ents, the conduction loss will exceed that of bipolars. Also, the ncreases An important feature of a power MOSFET is the absence of a secondary breakdown effect, which is present in a bipolar transistor, and as a result, it has an extremely rugged switching performance. In MOSFETS, Rps on) increases with temperature, Source and thus the current is automatically diverted away from the hot FIGURE 30.5 Power MoSFEt circuit symbol. pot.The drain body junction appears as an antiparallel diode (Source: B. K. Bose, Modern Power electronics between source and drain. Thus power MOSFETs will not sup- Evaluation, Technology and Applications, p 7@ port voltage in the reverse direction. Although this inverse diode 1992 IEEE is relatively fast, it is slow by comparison with the MOSFET. Recent devices have the diode recovery time as low as 100 ns. Since MOSFETs cannot be protected by fuses, n electronic protection technique has to be used. With the advancement in MOS technology, ruggedized MOSFETs are replacing the conventional MOSFETS. The need to ruggedize power MOSFETs is related to device reliability. If a MOSFET is operating within its specification range at all times, its chances for failing catastrophically are minimal. However, if its absolute naximum rating is exceeded, failure probability increases dramatically. Under actual operating conditions, a MOSFET may be subjected to transients- either externally from the power bus supplying the circuit or from the circuit itself due, for example, to inductive kicks going beyond the absolute maximum ratings. Such conditions are likely in almost every application, and in most cases are beyond a designers control. Rugged devices are made to be more tolerant for over-voltage transients. Ruggedness is the ability of a MOSFet to operate in an environment of dynamic electrical stresses, without activating any of the parasitic bipolar junction transistors. The rugged device can withstand higher levels of diode recovery dv/dt and static dv/dt. Insulated-Gate Bipolar Transistor (IGBT The IGBT has the high input impedance and high-speed characteristics of a MOSFET with the conductivity characteristic (low saturation voltage)of a bipolar transistor. The IGBT is turned on by applying a positive voltage between the gate and emitter and, as in the MOSFet, it is turned off by making the gate signal zero or slightly negative. The IGBT has a much lower voltage drop than a MOSFET of similar ratings. The structure f an IGBT is more like a thyristor and MOSFET. For a given IGBT, there is a critical value of collector current c 2000 by CRC Press LLC

© 2000 by CRC Press LLC Power MOSFET Power MOSFETs are marketed by different manufacturers with differences in internal geometry and with different names such as MegaMOS, HEXFET, SIPMOS, and TMOS. They have unique features that make them potentially attractive for switching applications. They are essentially voltage-driven rather than current-driven devices, unlike bipolar transistors. The gate of a MOSFET is isolated electrically from the source by a layer of silicon oxide. The gate draws only a minute leakage current of the order of nanoamperes. Hence the gate drive circuit is simple and power loss in the gate control circuit is practically negligible. Although in steady state the gate draws virtually no current, this is not so under transient conditions. The gate-to-source and gate-to-drain capacitances have to be charged and discharged appropriately to obtain the desired switching speed, and the drive circuit must have a sufficiently low output impedance to supply the required charging and discharging currents. The circuit symbol of a power MOSFET is shown in Fig. 30.5. Power MOSFETs are majority carrier devices, and there is no minority carrier storage time. Hence they have exceptionally fast rise and fall times. They are essentially resistive devices when turned on, while bipolar transistors present a more or less constant VCE(sat) over the normal operating range. Power dissipation in MOSFETs is Id2 RDS(on), and in bipolars it is ICVCE(sat). At low currents, therefore, a power MOSFET may have a lower conduction loss than a comparable bipolar device, but at higher currents, the conduction loss will exceed that of bipolars. Also, the RDS(on) increases with temperature. An important feature of a power MOSFET is the absence of a secondary breakdown effect, which is present in a bipolar transistor, and as a result, it has an extremely rugged switching performance. In MOSFETs, RDS(on) increases with temperature, and thus the current is automatically diverted away from the hot spot. The drain body junction appears as an antiparallel diode between source and drain. Thus power MOSFETs will not support voltage in the reverse direction. Although this inverse diode is relatively fast, it is slow by comparison with the MOSFET. Recent devices have the diode recovery time as low as 100 ns. Since MOSFETs cannot be protected by fuses, an electronic protection technique has to be used. With the advancement in MOS technology, ruggedized MOSFETs are replacing the conventional MOSFETs. The need to ruggedize power MOSFETs is related to device reliability. If a MOSFET is operating within its specification range at all times, its chances for failing catastrophically are minimal. However, if its absolute maximum rating is exceeded, failure probability increases dramatically. Under actual operating conditions, a MOSFET may be subjected to transients — either externally from the power bus supplying the circuit or from the circuit itself due, for example, to inductive kicks going beyond the absolute maximum ratings. Such conditions are likely in almost every application, and in most cases are beyond a designer’s control. Rugged devices are made to be more tolerant for over-voltage transients. Ruggedness is the ability of a MOSFET to operate in an environment of dynamic electrical stresses, without activating any of the parasitic bipolar junction transistors. The rugged device can withstand higher levels of diode recovery dv/dt and static dv/dt. Insulated-Gate Bipolar Transistor (IGBT) The IGBT has the high input impedance and high-speed characteristics of a MOSFET with the conductivity characteristic (low saturation voltage) of a bipolar transistor. The IGBT is turned on by applying a positive voltage between the gate and emitter and, as in the MOSFET, it is turned off by making the gate signal zero or slightly negative. The IGBT has a much lower voltage drop than a MOSFET of similar ratings. The structure of an IGBT is more like a thyristor and MOSFET. For a given IGBT, there is a critical value of collector current FIGURE 30.5 Power MOSFET circuit symbol. (Source: B.K. Bose, Modern Power Electronics: Evaluation, Technology, and Applications, p. 7. © 1992 IEEE.)

that will cause a large enough voltage drop to activate the thyristor. Hence, the device manufacturer specifies the peak allowable collector current that can flow without latch-up occurring. There is also a corresponding gate source voltage that permits this current to flow that should not be exceeded. Like the power MOSFET, the IGBT does not exhibit the secondary breakdown phenomenon common to bipolar transistors. However, care should be taken not to exceed the maximum power dissipation and specified maximum nction temperature of the device under all conditions for guaranteed reliable operation. The on- tate voltage of the IGBT is heavily dependent on the gate voltage. To obtain a low on-state voltage, a sufficiently high gate voltage must be applied In general, IGBTs can be classified as punch EMITTERN GATE EMITTER N+ GATE through(PT) and nonpunch-through(NPT) struc- Ires, as shown in Fig. 30.6. In the PT IGBT, an N uffer layer is normally introduced between the P+ substrate and the N-epitaxial layer, so that the whole N- drift region is depleted when the device is blocking N-Base or Epitaxial Drift Regis the off-state voltage, and the electrical field shape Base or Epitaxial Drift Regi gion is close to a rectangular punch-through IGBT, a better trade-off between the Substrate forward voltage drop and turn-off time can be achieved. PT IGBTs are available up to about 1200 V. COLLECTOR High voltage IGBTs are realized through non punch-through process. The devices are built ona n- wafer substrate which serves as the n- base drift region. Experimental NPT IGBTs of up to about 4 KV have been reported in the literature. NPT IGBTs more robust than PT IGBTs particularly under short circuit conditions. But NPT IGBTs have a higher for ward voltage drop than the PT IGBTs The PT IGBTs cannot be as easily paralleled as MOSFETs. The factors that inhibit current sharing of parallel-connected IGBTs are (1)on-state current unbalance, caused by Va(sat) distribution and main FIGURE 30.6 Nonpunch-through IGBT,(b)Punch- circuit wiring resistance distribution, and(2)current through IGBT, (c)IGBT equivalent circuit unbalance at turn-on and turn-off, caused by the switching time difference of the parallel connected devices and circuit wiring inductance distribution. The NPT IGBTs can be paralleled because of their positive temperature coefficient property MOS-Controlled Thyristor (MCT The MCT is a new type of power semiconductor device that combines the capabilities of thyristor voltage and current with MOS gated turn-on and turn-off. It is a high power, high frequency, low conduction drop and ugged device, which is more likely to be used in the future for medium and high power applications. A cross sectional structure of a p-type MCT with its circuit schematic is shown in Fig. 30.7. The MCT has a thyristor type structure with three junctions and PNPn layers between the anode and cathode In a practical MCT, about 00,000 cells similar to the one shown are paralleled to achieve the desired current rating. MCT is turned on by a negative voltage pulse at the gate with respect to the anode, and is turned off by a positive voltage pulse The MCT was announced by the General Electric R D Center on November 30, 1988. Harris Semiconductor Corporation has developed two generations of p-MCTs Gen-1 p-MCTs are available at 65 A/1000 V and 75A/600 V with peak controllable current of 120 A Gen-2 p-MCTs are being developed at similar current and voltage ratings, with much improved turn-on capability and switching speed. The reason for developing p-MCT is the fact that the current density that can be turned off is 2 or 3 times higher than that of an n-MCT; but n-MCTs are the ones needed for many practical applications. Harris Semiconductor Corporation is in the process of developing n-MCTS, which are expected to be commercially available during the next one to two years C 2000 by CRC Press LLC

© 2000 by CRC Press LLC that will cause a large enough voltage drop to activate the thyristor. Hence, the device manufacturer specifies the peak allowable collector current that can flow without latch-up occurring. There is also a corresponding gate source voltage that permits this current to flow that should not be exceeded. Like the power MOSFET, the IGBT does not exhibit the secondary breakdown phenomenon common to bipolar transistors. However, care should be taken not to exceed the maximum power dissipation and specified maximum junction temperature of the device under all conditions for guaranteed reliable operation. The onstate voltage of the IGBT is heavily dependent on the gate voltage. To obtain a low on-state voltage, a sufficiently high gate voltage must be applied. In general, IGBTs can be classified as punchthrough (PT) and nonpunch-through (NPT) structures, as shown in Fig. 30.6. In the PT IGBT, an N+ buffer layer is normally introduced between the P+ substrate and the N– epitaxial layer, so that the whole N– drift region is depleted when the device is blocking the off-state voltage, and the electrical field shape inside the N– drift region is close to a rectangular shape. Because a shorter N– region can be used in the punch-through IGBT, a better trade-off between the forward voltage drop and turn-off time can be achieved. PT IGBTs are available up to about 1200 V. High voltage IGBTs are realized through nonpunch-through process. The devices are built on a N– wafer substrate which serves as the N– base drift region. Experimental NPT IGBTs of up to about 4 KV have been reported in the literature. NPT IGBTs are more robust than PT IGBTs particularly under short circuit conditions. But NPT IGBTs have a higher forward voltage drop than the PT IGBTs. The PT IGBTs cannot be as easily paralleled as MOSFETs. The factors that inhibit current sharing of parallel-connected IGBTs are (1) on-state current unbalance, caused by VCE(sat) distribution and main circuit wiring resistance distribution, and (2) current unbalance at turn-on and turn-off, caused by the switching time difference of the parallel connected devices and circuit wiring inductance distribution. The NPT IGBTs can be paralleled because of their positive temperature coefficient property. MOS-Controlled Thyristor (MCT) The MCT is a new type of power semiconductor device that combines the capabilities of thyristor voltage and current with MOS gated turn-on and turn-off. It is a high power, high frequency, low conduction drop and a rugged device, which is more likely to be used in the future for medium and high power applications. A cross sectional structure of a p-type MCT with its circuit schematic is shown in Fig. 30.7. The MCT has a thyristor type structure with three junctions and PNPN layers between the anode and cathode. In a practical MCT, about 100,000 cells similar to the one shown are paralleled to achieve the desired current rating. MCT is turned on by a negative voltage pulse at the gate with respect to the anode, and is turned off by a positive voltage pulse. The MCT was announced by the General Electric R & D Center on November 30, 1988.Harris Semiconductor Corporation has developed two generations of p-MCTs. Gen-1 p-MCTs are available at 65 A/1000 V and 75A/600 V with peak controllable current of 120 A. Gen-2 p-MCTs are being developed at similar current and voltage ratings, with much improved turn-on capability and switching speed. The reason for developing p-MCT is the fact that the current density that can be turned off is 2 or 3 times higher than that of an n-MCT; but n-MCTs are the ones needed for many practical applications. Harris Semiconductor Corporation is in the process of developing n-MCTs, which are expected to be commercially available during the next one to two years. FIGURE 30.6 Nonpunch-through IGBT, (b) Punchthrough IGBT, (c) IGBT equivalent circuit

TYPICAL CELL CIRCUIT SCHEMATIC CROSS SECTION FOR P-MCT MCT OFF-FET IGBT OFF-FET CHANNEL ON-FET LOWER BASE WDE SE LOWER BASE BUFFER LOWER EMITER CK METAL ○ CATHOOE FIGURE 30.8 Current and future pwer semiconductor devices development direction(Source: A Q. Huang, FIGURE 30.7 ( Source: Harris Semiconductor, User Recent Developments of Power Semiconductor Devices Guide of mos controlled Thyristor, With permission.) VPEC Seminar Proceedings, Pp. 1-9. with permission. The advantage of an MCT over-IGBT is its low forward voltage drop. N-type MCTs will be expected to have a similar forward voltage drop, but with an improved reverse bias safe operating area and switching speed MCTs have relatively low switching times and storage time. The MCT is capable of high current densities and blocking voltages in both directions. Since the power gain of an MCT is extremely high, it could be driven directly from logic gates. An MCT has high dildt(of the order of 2500 A/us)and high dv/dr(of the order of 20,000 V/us) capability. The MCT, because of its superior characteristics, shows a tremendous possibility for applications such as motor drives, uninterrupted power supplies, static VAR compensators, and high pe active power line conditioners The current and future power semiconductor devices developmental direction is shown in Fig. 30.8. High temperature operation capability and low forward voltage drop operation can be obtained if silicon is by silicon carbide material for producing power devices. The silicon carbide has a higher band gap tha Hence higher breakdown voltage devices could be developed. Silicon carbide devices have excellent characteristics and stable blocking voltages at higher temperatures. But the silicon carbide devices are still in the very early stages of development. Defining Terms di/dt limit: Maximum allowed rate of change of current through a device. If this limit is exceeded, the devie may not be guaranteed to work reliabl dv/dt: Rate of change of voltage withstand capability without spurious turn-on of the device Forward voltage: The voltage across the device when the anode is positive with respect to the cathode. t: Represents available thermal energy resulting from current flow. reverse voltage: The voltage across the device when the anode is negative with respect to the cathode Related Topic 5.1 Diodes and Rectifie References B K. Bose, Modern Power Electronics: Evaluation, Technology and Applications, New York: IEEE Press, 1992. Harris Semiconductor, USser's Guide of MOS Controlled Thyrist c 2000 by CRC Press LLC

© 2000 by CRC Press LLC The advantage of an MCT over-IGBT is its low forward voltage drop. N-type MCTs will be expected to have a similar forward voltage drop, but with an improved reverse bias safe operating area and switching speed. MCTs have relatively low switching times and storage time. The MCT is capable of high current densities and blocking voltages in both directions. Since the power gain of an MCT is extremely high, it could be driven directly from logic gates.An MCT has high di/dt (of the order of 2500 A/ms) and high dv/dt (of the order of 20,000 V/ms) capability. The MCT, because of its superior characteristics, shows a tremendous possibility for applications such as motor drives, uninterrupted power supplies, static VAR compensators, and high power active power line conditioners. The current and future power semiconductor devices developmental direction is shown in Fig. 30.8. High temperature operation capability and low forward voltage drop operation can be obtained if silicon is replaced by silicon carbide material for producing power devices. The silicon carbide has a higher band gap than silicon. Hence higher breakdown voltage devices could be developed. Silicon carbide devices have excellent switching characteristics and stable blocking voltages at higher temperatures. But the silicon carbide devices are still in the very early stages of development. Defining Terms di/dt limit: Maximum allowed rate of change of current through a device. If this limit is exceeded, the device may not be guaranteed to work reliably. dv/dt: Rate of change of voltage withstand capability without spurious turn-on of the device. Forward voltage: The voltage across the device when the anode is positive with respect to the cathode. I2t: Represents available thermal energy resulting from current flow. Reverse voltage: The voltage across the device when the anode is negative with respect to the cathode. Related Topic 5.1 Diodes and Rectifiers References B.K. Bose, Modern Power Electronics: Evaluation, Technology, and Applications, New York: IEEE Press, 1992. Harris Semiconductor, User’s Guide of MOS Controlled Thyristor. FIGURE 30.8 Current and future pwer semiconductor devices development direction (Source: A.Q. Huang, Recent Developments of Power Semiconductor Devices, VPEC Seminar Proceedings, pp. 1–9. With permission.) FIGURE 30.7 (Source: Harris Semiconductor, User’s Guide of MOS Controlled Thyristor, With permission.)

A.Q. Huang, Recent Developments of Power Semiconductor Devices, VPEC Seminar Proceedings, Pp. 1-9, Sep- N. Mohan and T. Undeland, Power Electronics: Converters, Applications, and Design, New York: John Wiley J. Wojslawowicz, Ruggedized transistors emerging as power MOSFET standard-bearers, Power Technics Mag- azine, pp 29-32, January 1988. Further Information B M. Bird and K G. King, An Introduction to Power Electronics, New York: Wiley-Interscience, 1984 R Sittig and P. Roggwiller, Semiconductor Devices for Power Conditioning, New York: Plenum, 1982. V.A.K. Temple, " Advances in MOS controlled thyristor technology and capability, Power Conversion, pp 544-554,Oct.1989 B W. Williams, Power Electronics, Devices, Drivers and Applications, New York: John Wiley, 1987. 30.2 Power Conversion Kaushik rajashekara Power conversion deals with the process of converting electric power from one form to another. The power ctronic apparatuses performing the power conversion are called power converters Because they contain no moving parts, they are often referred to as static power converters. The power conversion is achieved using ower semiconductor devices, which are used as switches. The power devices used are SCRs(silicon controlled rectifiers,or thyristors), triacs, power transistors, power MOSFETs, insulated gate bipolar transistors(IGBTs) and MCTs(MOS-controlled thyristors). The power converters are generally classified as 1. ac-dc converters(phase-controlled converters) 2. direct ac-ac converters(cycloconverters) 3. dc-ac converters(inverters) 4. dc-dc converters(choppers, buck and boost converters) AC-DC Converters The basic function of a phase-controlled converter is to convert an alternating voltage of variable amplitude and frequency to a variable dc voltage. The power devices used for this application are generally SCRs. The average value of the output voltage is controlled by varying the conduction time of the SCRs. The turn-on of the SCR is achieved by providing a gate pulse when it is forward-biased. The turn-off is achieved by the commutation of current from one device to another at the instant the incoming ac voltage has a higher instantaneous potential than that of the outgoing wave. Thus there is a natural tendency for current to be commutated from the outgoing to the incoming SCR, without the aid of any external commutation circuitry. This commutation process is often referred to as natural commutation. A single-phase half-wave converter is shown in Fig. 30.9. When the SCR is turned on at an angle a, full supply voltage(neglecting the SCR drop) is applied to the load. For a purely resistive load, during the positive half cycle, the output voltage waveform follows the input ac voltage waveform. During the negative half cycle the SCR is turned off. In the case of inductive load, the energy stored in the inductance causes the current to flow in the load circuit even after the reversal of the supply voltage, as shown in Fig. 30.9(b). If there is no off the SCR as soon as the input voltage polarity reverses, as shown in Fig. 30.9(c). When the SCR is of o freewheeling diode D, the load current is discontinuous. A freewheeling diode is connected across the load t the load current will freewheel through the diode. The power flows from the input to the load only when the SCR is conducting. If there is no freewheeling diode, during the negative portion of the supply voltage, SCR returns the energy stored in the load inductance to the supply. The freewheeling diode improves the input c 2000 by CRC Press LLC

© 2000 by CRC Press LLC A.Q. Huang, Recent Developments of Power Semiconductor Devices, VPEC Seminar Proceedings, pp. 1–9, September 1995. N. Mohan and T. Undeland, Power Electronics: Converters, Applications, and Design, New York: John Wiley & Sons, 1995. J. Wojslawowicz, “Ruggedized transistors emerging as power MOSFET standard-bearers,” Power Technics Magazine, pp. 29–32, January 1988. Further Information B.M. Bird and K.G. King, An Introduction to Power Electronics, New York: Wiley-Interscience, 1984. R. Sittig and P. Roggwiller, Semiconductor Devices for Power Conditioning, New York: Plenum, 1982. V.A.K. Temple, “Advances in MOS controlled thyristor technology and capability,” Power Conversion, pp. 544–554, Oct. 1989. B.W. Williams, Power Electronics, Devices, Drivers and Applications, New York: John Wiley, 1987. 30.2 Power Conversion Kaushik Rajashekara Power conversion deals with the process of converting electric power from one form to another. The power electronic apparatuses performing the power conversion are called power converters. Because they contain no moving parts, they are often referred to as static power converters. The power conversion is achieved using power semiconductor devices, which are used as switches. The power devices used are SCRs (silicon controlled rectifiers, or thyristors), triacs, power transistors, power MOSFETs, insulated gate bipolar transistors (IGBTs), and MCTs (MOS-controlled thyristors). The power converters are generally classified as: 1. ac-dc converters (phase-controlled converters) 2. direct ac-ac converters (cycloconverters) 3. dc-ac converters (inverters) 4. dc-dc converters (choppers, buck and boost converters) AC-DC Converters The basic function of a phase-controlled converter is to convert an alternating voltage of variable amplitude and frequency to a variable dc voltage. The power devices used for this application are generally SCRs. The average value of the output voltage is controlled by varying the conduction time of the SCRs. The turn-on of the SCR is achieved by providing a gate pulse when it is forward-biased. The turn-off is achieved by the commutation of current from one device to another at the instant the incoming ac voltage has a higher instantaneous potential than that of the outgoing wave. Thus there is a natural tendency for current to be commutated from the outgoing to the incoming SCR, without the aid of any external commutation circuitry. This commutation process is often referred to as natural commutation. A single-phase half-wave converter is shown in Fig. 30.9. When the SCR is turned on at an angle a, full supply voltage (neglecting the SCR drop) is applied to the load. For a purely resistive load, during the positive half cycle, the output voltage waveform follows the input ac voltage waveform. During the negative half cycle, the SCR is turned off. In the case of inductive load, the energy stored in the inductance causes the current to flow in the load circuit even after the reversal of the supply voltage, as shown in Fig. 30.9(b). If there is no freewheeling diode DF , the load current is discontinuous. A freewheeling diode is connected across the load to turn off the SCR as soon as the input voltage polarity reverses, as shown in Fig. 30.9(c). When the SCR is off, the load current will freewheel through the diode. The power flows from the input to the load only when the SCR is conducting. If there is no freewheeling diode, during the negative portion of the supply voltage, SCR returns the energy stored in the load inductance to the supply. The freewheeling diode improves the input power factor

Fa L FIGURE 30.9 Single-Phase half-wave converter with freewheeling diode (a)Circuit diagram;(b)waveform for inductive load with no freewheeling diode; (c)waveform with freewheeling diode The controlled full-wave dc output may be obtained by using either a center tap transformer(Fig. 30.10)or by bridge configuration(Fig. 30. 11). The bridge configuration is often used when a transformer is undesirable and the magnitude of the supply voltage properly meets the load voltage requirements. The average output voltage of a single-phase full-wave converter for continuous current conduction is given where Em is the peak value of the input voltage and a is the firing angle. The output voltage of a single-phase bridge circuit is the same as that shown in Fig. 30.10. Various configurations of the single-phase bridge circuit can be obtained if, instead of four SCRs, two diodes and two SCRs are used, with or without freewheeling diodes. A three-phase full-wave converter consisting of six thyristor switches is shown in Fig. 30.12(a). This is the most commonly used three-phase bridge configuration. Thyristors TT, and Ts are turned on during the positive half cycle of the voltages of the phases to which they are connected, and thyristors T2, Ta, and ts are urned on during the negative half cycle of the phase voltages. The reference for the angle in each cycle is at the crossing points of the phase voltages. The ideal output voltage, output current, and input current waveforms are shown in Fig. 30.12(b). The output dc voltage is controlled by varying the firing angle a. The average output voltage under continuous current conduction operation is given by E cOS aL where Em is the peak value of the phase voltage. At a=90, the output voltage is zero. For 0< a<90%, v, is positive and power flows from ac supply to the load. For 90< a< 180%,v, is negative and the converter operates in the inversion mode. If the load is a dc motor, the power can be transferred from the motor to the ac supply, a process known as re

© 2000 by CRC Press LLC The controlled full-wave dc output may be obtained by using either a center tap transformer (Fig. 30.10) or by bridge configuration (Fig. 30.11). The bridge configuration is often used when a transformer is undesirable and the magnitude of the supply voltage properly meets the load voltage requirements. The average output voltage of a single-phase full-wave converter for continuous current conduction is given by where Em is the peak value of the input voltage and a is the firing angle. The output voltage of a single-phase bridge circuit is the same as that shown in Fig. 30.10. Various configurations of the single-phase bridge circuit can be obtained if, instead of four SCRs, two diodes and two SCRs are used,with or without freewheeling diodes. A three-phase full-wave converter consisting of six thyristor switches is shown in Fig. 30.12(a). This is the most commonly used three-phase bridge configuration. Thyristors T1, T3, and T5 are turned on during the positive half cycle of the voltages of the phases to which they are connected, and thyristors T2, T4, and T6 are turned on during the negative half cycle of the phase voltages. The reference for the angle in each cycle is at the crossing points of the phase voltages. The ideal output voltage, output current, and input current waveforms are shown in Fig. 30.12(b). The output dc voltage is controlled by varying the firing angle a. The average output voltage under continuous current conduction operation is given by where Em is the peak value of the phase voltage. At a = 90°, the output voltage is zero. For 0 < a < 90°, vo is positive and power flows from ac supply to the load. For 90° < a < 180°, vo is negative and the converter operates in the inversion mode. If the load is a dc motor, the power can be transferred from the motor to the ac supply, a process known as regeneration. FIGURE 30.9 Single-phase half-wave converter with freewheeling diode. (a) Circuit diagram; (b) waveform for inductive load with no freewheeling diode; (c) waveform with freewheeling diode. v E d m a p = 2 cos a v E o m = 3 3 p cos a

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