Silicon Surface Orientation (100) Devices are built on surface>surface orientation affects the electrical and physical properties Two commonly used crystal orientation in silicon (111)crystal plane Largest number of atoms per cm2, Oxidize fast 111) Higher density of interface states (defects) (100)crystal plane Superior electrical properties of the Lowest number of atoms per cm2 (100)Si/SiO,interface makes (100) Oxidize slow silicon dominant in manufacturing. Low density of interface statesSilicon Surface Orientation Devices are built on surface Æ surface orientation affects the electrical and physical properties (100) Two commonly used crystal orientation in silicon (111) crystal plane • Largest number of atoms per cm 2 , • Oxidize fast • Hi h d it f i t f t t (111) Hi g her density o f inter face states (defects) (100) cr ystal plane (111) ( )y p • Lowest number of atoms per cm 2 • Oxidize slow • Low density of interface states Superior electrical properties of the (100) Si/SiO 2 interface makes (100) silicon dominant in manufacturing