Defects in Silicon Crystals Point Defects Stacking Fault Dislocation Precipitate Various types of defects can exist in crystal or can be created by processing steps. Point defects: 。 Impurity related defect Native point defect Vacancy (a missing atom),Interstitial(an extra atom) Equilibrium concentration increases with T:1012-1015cm3@1000CDefects in Silicon Crystals Point Defects V Stacking Fault – I Dislocation Precipitate Point defects: Various types of defects can exist in crystal or can be created by processing steps. Point defects: • Impurity related defect • Native point defect Vacancy (a missing atom), Interstitial (an extra atom) Equilibrium concentration increases with T: 1012-1015cm-3 @ 1000 o C