Si片背刻蚀后得到的薄膜器件 51 20%KOH 72Cx10 hrs, etches silicon along the(111)crystal plane giving a 53 angle. Si3N4 is the masking material for the etching20% KOH @ 72C10 hrs, etches silicon along the (111) crystal plane giving a 53 angle. Si3N4 is the masking material for the etching. Si片背刻蚀后得到的薄膜器件