(b)射频放电 Pressure: 200 m Torr(20 Pa 基板 Plasma Power:13.56MHz,100-1000W Electron density. 5x1016m-3 T=2-4 eV RF source rF bias 弱电离等离子体 高反应活性RF bias 基板 RF source Plasma Pressure:200 mTorr (20 Pa) Power:13.56 MHz, 100-1000 W Electron density: 5x10 16 m -3 Te= 2 -4 eV 弱电离等离子体 高反应活性 (b) 射频放电